• Title/Summary/Keyword: Voltage-Voltage

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A Single-Phase Embedded Z-Source DC-AC Inverter by Asymmetric Voltage Control (비대칭 전압 제어를 이용한 단상 임베디드 Z-소스 DC-AC 인버터)

  • Oh, Seung-Yeol;Kim, Se-Jin;Jung, Young-Gook;Lim, Young-Cheol
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.4
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    • pp.306-314
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    • 2012
  • In case of the conventional DC-AC inverter using two DC-DC converters with unipolar output capacitor voltages, for generating the AC output voltage, the output capacitor voltages of its each DC-DC converter must be higher than the DC input voltage. To solve this problem, this paper proposes a single-phase DC-AC inverter using two embedded Z-source converters with bipolar output capacitor voltages. The proposed inverter is composed of two embedded Z-source converters with common DC source and output AC load. The AC output voltage is obtained by the difference of the output capacitor voltages of each converter. Though the output capacitor voltage of converter is relatively low compared to the conventional method, it can be obtained the same AC output voltage. Moreover, by controlling asymmetrically the output capacitor voltage, the AC output voltage of the proposed system is higher than the DC input voltage. To verify the validity of the proposed system, a DSP(TMS320F28335) based single-phase embedded Z-source DC-AC inverter was made and the PSIM simulation was performed under the condition of the DC source 38V. As controlled symmetrically and asymmetrically the output capacitor voltages of each converter, the proposed inverter could produce the AC output voltage with sinusoidal waveform. Particularly, in case of asymmetric control, a higher AC output voltage was obtained. Finally, the efficiency of the proposed system was measured as 95% and 97% respectively in case of symmetric and asymmetric control.

Design of Low-Voltage Reference Voltage Generator for NVM IPs (NVM IP용 저전압 기준전압 회로 설계)

  • Kim, Meong-Seok;Jeong, Woo-Young;Park, Heon;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.375-378
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    • 2013
  • A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip's $0.18{\mu}m$ EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current-mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is $20.5ppm/^{\circ}C$. The VREF voltage has a mean of 1.181V and its three sigma ($3{\sigma}$) value is 71.7mV.

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Secondary Indirect Constant Voltage Control Technique for Hybrid Solid State Transformer using Primary Side Information (하이브리드 반도체 변압기의 1차측 정보를 이용한 2차측 간접 정전압 제어 기법)

  • Lee, Taeyeong;Yun, Chun-Gi;Cho, Younghoon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.5
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    • pp.420-423
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    • 2020
  • This study proposes an indirect constant voltage control algorithm for hybrid solid-state transformers (HSSTs) by using primary side information. Considering the structure of HSSTs, measuring voltage and current information on the primary side of a transformer is necessary to control the converter and inverter of the power converter. The secondary side output voltage is measured to apply the conventional secondary side constant voltage control algorithm, and thus, the digital control board requires the same rated insulation voltage as that of the transformer. To solve this problem, the secondary voltage of the transformer obtained from the tap voltage is used. Moreover, output voltage decreases as load increases because the proposed indirect constant voltage control scheme does not consider the cable impedance between the secondary output terminal and the load. This study also proposes a technique for compensating the secondary output voltage by using the primary current of the transformer and the resistance value of the cable. An experiment is conducted using a scale-down HSST prototype consisting of a 660 V/220 V tap transformer. The problem of the proposed indirect constant voltage control strategy and the improvement effect due to the application of the compensation method are compared using the derived experimental results.

Observation and Compensation of Voltage Distortion of PWM VSI for PMSM using Adaptive Control Method (영구자석 동기전동기 구동을 위한 전압원 인버터의 적응제어기법을 이용한 전압 왜곡 관측 및 보상)

  • Kim Hag-Wone;Youn Myung-Joong;Kim Hyun-Soo;Cho Kwan-Youl
    • The Transactions of the Korean Institute of Power Electronics
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    • v.10 no.1
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    • pp.52-60
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    • 2005
  • Generally, a voltage difference or voltage distortion exists between the reference voltage and the practical voltage applied to a motor in a pulse width modulated(PWM) voltage source inverter(VSI). This voltage distortion varies with the operating conditions such as the temperature, DC link voltage, and phase current level. Also the voltage distortion affects the machine current distortion, torque pulsations, and control performance. In this paper, the voltage distortion in a PWM VSI is analyzed and a new on-line estimation method based on the model reference adaptive system(MRAS) is proposed to compensate the time varying voltage distortion, while considering the parameter variations for a permanent magnet synchronous motor (PMSM). The simulation and experimental results show the effectiveness of the proposed voltage difference observer and the compensation method.

Threshold Voltage Roll-off for Bottom Gate Voltage of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 하단게이트 전압에 따른 문턱전압이동현상)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.05a
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    • pp.741-744
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    • 2014
  • This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

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An Investigation into the Impact on Voltage Sag due to Faults in Low Voltage Power Distribution Systems

  • Aggarwal R. K.
    • KIEE International Transactions on Power Engineering
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    • v.5A no.2
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    • pp.97-102
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    • 2005
  • Voltage sags are the most widespread quality issues affecting distribution systems. This paper describes in some detail the voltage sag characteristics due to different types and locations of fault in a practical low voltage power distribution system encountered in the UK. The results not only give utility engineers very useful information when identifying parts of the system most likely to pose problems for customer equipments, but also assist the facility personnel to make decisions on purchasing power quality mitigation equipment.

A Study on the Analysis and Control of Voltage Stability (전압안정성 분석 및 제어에 관한 연구)

  • 장수형;김규호;유석구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.6
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    • pp.869-876
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    • 1994
  • This paper presents an efficient method to calculate voltage collapse point and to avoid voltage instability. To evaluate voltage stability in power systems, it is necessary to get critical loading points. For this purpose, this paper uses linear programming to calculate efficiently voltage collapse point. Also, if index value becomes larger than given threshold value, voltage stability is improved by compensation of reactive power at selected bus. This algorithm is verified by simulation on the IEEE 14-bus sample system.

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Basic Characteristic of 5-level Inverter with Different Divided DC Link Voltage

  • Matsuse, Kouki;Matsumoto, Takafumi;Kodera, Yuji
    • Journal of international Conference on Electrical Machines and Systems
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    • v.2 no.2
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    • pp.179-183
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    • 2013
  • This paper report on experimental results of 5-level inverter by DC divided link voltage. We have alreday reported that DC divided link valtage comes to be able to reduse harmonic of out line voltage. So we tested whether DC divided link voltage can reduce harmonics in experimental setup. This paper shows simulation results and experimental results. And we confirmed that DC divided link voltage can also apply in experimental setup.

Experimental Study of Vehicle Signal Change for Generator Voltage Variation (자동차 발전기 전압변동에 따른 차량 신호 변화에 대한 실험적 연구)

  • Ko, Kwang-Ho
    • Journal of the Korean Society of Industry Convergence
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    • v.21 no.5
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    • pp.235-240
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    • 2018
  • The generator of an automobile supplies electric voltage and current for various electric components. The supplied voltage can be changed by sudden variation of the electric load. The voltage was controlled by independent power supply in the study. The TPS and APS signal was changes as the voltage of the power supply. The ECU output voltage and OBD signal voltage was changed also as the variance of the power supply.

An Implementation of Temperature Independent Bias Scheme in Voltage Detector (온도에 무관한 전압검출기의 바이어스 구현)

  • Moon, Jong-Kyu;Kim, Duk-Gyoo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.6
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    • pp.34-42
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    • 2002
  • In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.