• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.461-464
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• 1999

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.1
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• pp.91-102
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• 2013

This paper proposes the improved LCCT(Inductor-Capacitor-Capacitor-Trans) Z-source DC-DC converter (Improved LCCT ZSDC) which can generate the bipolar output voltages according to duty ratio D. The proposed converter has the characteristic and structure of Quasi Z-source DC-DC converter(Quasi ZSDC) and conventional LCCT Z-source DC-DC converter(LCCT ZSDC). To confirm the validity of the proposed method, PSIM simulation and a DSP based experiment were performed for each converter. In case which the input DC voltage is 70V, the bipolar output DC voltage of positive 90V and negative 50V could generate. Also, as comparison result of the capacitor voltage ripple in Z-network and the input current under the same condition for each converter, the voltage stress and the capacitor voltage in Z-network of the proposed method were lower compared with the conventional methods. Finally, the efficiency for each method was investigated according to load variation and duty ratio D.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.1
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• pp.1-9
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• 2013

This paper proposes a ST(Switched Trans) quasi Z-source inverter using a Switched Trans Cell combing the characteristics of a Switched Inductor Cell and Trans. A DC link inductor of the conventional quasi Z-source inverter is alternated with Switched Trans Cell of the proposed ST quasi Z-source inverter. Trans Cell of the proposed method consists of one Trans and two diodes, and the proposed method has higher and more various boost function than the conventional quasi Z-source inverter by simply changing the turns ratio of primary and secondary of the Trans. The validity of the proposed ST Z-source inverter was confirmed by PSIM simulation and a DSP based experiment under the input voltage 48V and output phase voltage 30V. As a result, when compared with the traditional quasi Z-source inverter, the proposed method has the advantage of the low voltage stress under the same output voltage condition of the voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.2
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• pp.133-141
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• 2020

The use of high-gain-voltage step-up converters for distributed power generation systems is being popularized because of the need for new energy generation and power conversion technologies. In this study, a new constructed high-gain-boost DC-DC converter was proposed to coordinate low voltage output DC sources, such as PV or fuel cell systems, with high DC bus (380 V) lines. Compared with traditional boost DC-DC converters, the proposed converter can create higher gain and has wider input voltage range and lower voltage stress for power semiconductors and passive elements. Moreover, the proposed topology produces multilevel DC voltage output, which is the main advantage of the proposed topology. Steady-state analysis in continuous conduction mode of the proposed converter is discussed in detail. The practicability of the proposed DC-DC converter is presented by experimental results with a 300 W prototype converter.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.399-403
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• 2005

In this paper, we analyze on the effect of RC filter to mitigate transient overvoltage on the high voltage induction motor fed by H-bridge cascaded 7-level inverter. The switching surge voltage becomes the major cause to occur the insulation failure by serious voltage stress in the stator winding of high voltage induction motor. The effect of switching surge appears more serious in high voltage induction motor than low voltage induction motor. Consequently, we demonstrated that the RC filter connected to the motor terminals greatly reduces the transient voltage stress md ringing. The results of simulation show the suppression of transient overvoltage at the motor end of a long cable. using EMTP

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.322-325
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• 2000

N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1552-1553
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• 2011

The HVDC transformer which is one of the main equipments for HVDC(High Voltage Direct Current) electric power transmission systems is exposed to not only AC voltage but also the inflowing DC voltage which comes from the DC-AC converter systems. Therefore, the HVDC transformer insulation system is required to withstand the electric field stress under AC, DC and DC polarity reversal conditions. However the electric field distributions under those conditions are different because the AC electric field and DC electric field are governed by permittivity and conductivity, respectively. In this study, the changes of electric potential and electric field of conventional AC transformer insulation system under DC polarity reversal test condition were analyzed by FEM(Finite Element Method). The DC electric field stress was concentrated in the solid insulators while the AC electric field stress was concentrated in the mineral oil. In addition, the electric stress under that condition which is affected by the surface charge accumulation at the interfaces between insulators was evaluated. The stress in some parts could be higher than that of AC and DC condition, during polarity reversal test. The result of this study would be helpful for the HVDC transformer insulation system design.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.11-116
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• 2000

A topology decreased switching loss and voltage stress by zero voltage switching is presented in this paper. Generally, Switching mode converting productes voltage stress and power losses due to excessive voltage and current. which affect to performance of power supply and reduce overall efficiency of equipments. Virtually, In flyback converter, transient peak voltage and current at switcher are generated by parasitic elements. To solve these problems, present ZVS flyback converter topology applied a auxiliary circuit. Incorporation of auxiliary circuit into a conventional flyback topology serves to reduce power losses and to minimize switching voltage stress. Snubber capacitor in auxiliary circuit serves ZVS state by control voltage variable time at turn on and off of main switch, then reduces voltage stress and power losses. The proposed converter has lossless switching in variable load condition with wide range. A detailed analysis of the circuit is presented and the operation procedure is illustrated. A (50W 100kHz prototype) ZVS flyback converter using a auxiliary circuit is built which shows an efficiency improvement as compared to a conventional hard switching flyback converter.