• Journal of radiological science and technology
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• v.18 no.2
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• pp.61-73
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• 1995

For the managements of the diagnostic X-ray equipments, the authors examined the output of single phase rectification assembly, Three phase rectification assembly and serial radiographic appartus, and got the following conclusions. 1. When the tube voltages in X-ray control panels ware compared to the measured values on the kVp pulse meter, only little differences were detected in all the X-ray equipments. And most of the equipments were all well managed within the internationally permitted limits, excepting the 12.02 % error at 120 kVp in three phase rectifying assembly. 2. As for the X-ray qualities affecting the X-ray images, the serial radiographic apparatus showed excellence, while the single phase rectification assembly were somewhat inferior to the others only maining the internationally recommended limits. 3. The tube voltage ranges where the X-ray output showed excellence were $100{\sim}200\;mA$ in serial radiographic apparatus, $200{\sim}350\;mA$ in three phase rectification assembly and $350{\sim}400\;mA$ in single phase rectification assembly respectively. 4. In the repeatability test of the X-ray equipments, CVs were in the range of $0.0029{\sim}0.049$, which is within the HEW or KS standards. Consequently all the equipments are thought to be well-manage. 5. This study on characteristics and output of the X-ray equipments was accomplished within a limited short time. Long-time researches on the function managements for the X-ray equipments should be followed along with the periodical checking the output for reduction of X-ray exposures to the patients or radio-technologists, and for maintanance and prediction of trouble of the equipments.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.4
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• pp.449-457
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• 2016

In this study, the effectiveness of electrodialysis in removing inorganic arsenic from groundwater was investigated. To evaluate the feasibility of the electrodialysis, operating parameters such as treatment time, feed concentration, applied voltage and superficial velocity were experimentally investigated on arsenic removal. The higher conductivity removal and arsenic removal efficiency were obtained by increasing applied voltages and operation time. An increase of salinity concentrations in arsenic polluted groundwater exerted no effects on the arsenic separation ratios. Arsenic polluted waters were successfully treated with stack voltages of 1.8 ~ 2.4 V/cell-pair to approximately 93.4% of arsenic removal. Increase flow rate in diluate cell gave positive effect to removal rate. However, increase of superficial velocity in the concentrated cell exerted no effects on either the conductivity reduction or on the separation efficiency. Hopefully, this paper will provide direction in selecting appropriate operating conditions of electrodialysis for arsenic removal.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.586-590
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• 2006

As one of electro active polymers for soft smart materials, the ionic polymer metal composites (IPMC) are easy to produce through chemical reduction processing and show high displacements at low voltage. When the IPMC actuates, the deformation depends on a few factors including the structure of based membrane, species and morphology of the metal electrodes, the nature of cations and the level of hydration. As previously published, we have been studying on improvement of actuation through surface electrode modification of IPMC to grasp the effect of electrode morphology on actuation. This study is comparative experiments through the chemical reaction and deposition by ion beam assisted deposition (IBAD) in order to prepare the very thin and homogeneous surface electrode of IPMC. The IPMCs were prepared with different surface roughness of polymer membrane, and the influence of the surface roughness on the actuation was studied. By investigating the electrical properties and driving displacement, the actuating properties of IPMC with different surface roughness were studied.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.3052-3058
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• 2014

In this article, we have designed and synthesized a novel donor-${\pi}$-acceptor (D-${\pi}$-A) type porphyrin-based sensitizer (denoted UI-5), in which a carboxyl anchoring group and a 9,9-dimethyl fluorene were introduced at the meso-positions of porphyrin ring via phenylethynyl and ethynyl bridging units, respectively. Long alkoxy chains in ortho-positions of the phenyls were supposed to reduce the degree of dye aggregation, which tends to affect electron injection yield in a photovoltaic cell. The cyclic voltammetry was employed to determine the band gap of UI-5 to be 1.41 eV based on the HOMO and LUMO energy levels, which were estimated by the onset oxidation and reduction potentials. The incident monochromatic photon-to-current conversion efficiency of the UI-5 DSSC assembled with double-layer (20 nm-sized $TiO_2$/400 nm-sized $TiO_2$) film electrodes appeared lower upon overall ranges of the excitation wavelengths, but exhibited a higher value over the NIR ranges (${\lambda}$ = 650-700 nm) compared to the common reference sensitizer N719. The UI-5-sensitized cell yielded a relatively poor device performance with an overall conversion efficiency of 0.74% with a short circuit photocurrent density of $3.05mA/cm^2$, an open circuit voltage of 0.54 mV and a fill factor of 0.44 under the standard global air mass (AM 1.5) solar conditions. However, our report about the synthesis and the photovoltaic characteristics of a porphyrin-based sensitizer in a D-${\pi}$-A structure demonstrated a significant complex relationship between the sensitizer structure and the cell performance.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.84-92
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• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.361-364
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• 2013

Since the non-overlapping gate driver used in conventional DC-DC boost converters generates fixed dead-times, the converters suffer from the body-diode conduction loss or the charge-sharing loss. A adaptive control method has been proposed to reduce these loses. In this method, however, occurrence of and overlapping time of two power transistors in CCM results in reduction of efficiency. In this paper, to overcome this problem a new adaptive control method in proposed, and a DC-DC boost converter with the proposed adaptive control and power switching has been designed in a 0.35um CMOS process. The designed converter outputs 3.3V from a input voltage of 2.5V. The switching frequency is 500kHz and the maximum power efficiency is 95.3% at a load current 150mA. The designed chip area is $1720um{\times}1280um$.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.5
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• pp.376-384
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• 2020

An energy storage system is composed of lithium-ion batteries in modern applications. Batteries are regarded as storage devices for renewable and residual energy. The failure of batteries can cause the performance reduction and explosion of battery systems. High maintenance cost is essential when dealing with the problem of battery safety. Therefore an accurate health diagnosis is required to ensure the high reliability of battery systems. A battery pack is a combination of single cells in series and parallel connections. A battery pack has to consider various factors to assess battery health. Battery health involves conventional factors and additional factors, such as cell-to-cell imbalance. For large applications, state-of-health (SOH) can be inaccurate because of the lack of factors that indicate the state of the battery pack. In this study, six characterization factors are proposed for improving the SOH estimation of battery packs. The six proposed characterization factors can be regarded as health indicators (HIs). The six HIs are applied to the principal component analysis (PCA) algorithm. To reflect information regarding capacity, voltage, and temperature, the PCA algorithm extracts new degradation factors by using the six HIs. The new degradation factors are applied to a multiple regression model. Results show the advancement and improvement of SOH estimation.

• Proceedings of the KIEE Conference
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• 1998.07c
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• pp.918-922
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• 1998

With the development of industry, the qualitical advancement of power is needed. Since it is placed in the end step of power system, the fault at the distribution system causes some users blackout directly. So if the fault occurs, quick restoration is very important subject and, for the reason, induction of the distribution automation system is now being progressed briskly. For the quick restoration of the faulted distribution system, the load shedding of the blackout-area must be followed, and the other problems like the shedded load, faulted voltage and the rest may cause other accident. Accordingly load shedding must be based on the precise calculation technique during the distribution system load flow(dist flow) calculation. In these days because of its superior convergence characteristic the Newton-Raphson method is most widely used. The number of buses in the distribution system amounts to thousands, and if the fault occurs at the distribution system, the speed for the dist flow calculation is to be improved to apply to the On-Line system. However, Newton-Raphson method takes much time relatively because it must calculate the Jacobian matrix and inverse matrix at every iteration, and in the case of huge load, the equation is hard to converge. In this thesis. matrix equation is used to make algebraical expression and then to solve load flow equation and to modify above defects. Then the complex matrix is divided into real part and imaginary part to keep sparcity. As a result time needed for calculation diminished. Application of mentioned algorithm to 302 bus, 700 bus, 1004 bus system led to almost identical result got by Newton-Raphson method and showed constant convergence characteristic. The effect of time reduction showed 88.2%, 86.4%, 85.1% at each case of 302 bus, 700 bus system 86.4%, and 1004 bus system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.181-185
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• 2016

One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.