• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1500-1502
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• 1997

We investigated the tracking and erosion resistance of the silicone rubber by Inclined-Plane Method. And, with the variation of the accelerated conditions such as the applied voltage and composition of contaminant, the change of the tracking characteristics according to such conditions was evaluated. The leakage current significantly increases with the increasing voltage, but the weight loss remains almost the same. The voltage above 5.0 kV isn't recommended because tracking breakdown occurs as fast as it does without erosion, and the typical discharge waveform was the form of rectifying wave.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.219-222
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• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1218-1220
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• 2000

A new control technique is proposed to reduce the distortion of UPS output voltage. The Load of UPS is rectifier which has many harmonics on its output current in many cases. The distortion of output voltage by the harmonics is repeated at the same position in one cycle. Therefore we can assume that the next cycle wave form would be similar to the previous one. The repeated error can be estimated and be compensated by the Multi controller at every sampling times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.6
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• pp.290-295
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• 2020

In this study, Electro spinning was carried out using Cabon nanotube 0.1%-Polyacrylonitrile 3%-Dimethylformamide 17% agitation solution. It was investigated the solute and solvent correlations according to the electro spinning voltages ranging form 5 to 40 kV, based on the SEM image. Except voltage 25 kV, electro spinning was failed due to the lack of electro spinning (less than 60%). Voltage 25 kV was showed excellent properties, and was confirmed Cabon nanotube 58.1 nm and diameter of Cabon nanotube + Polyacrylonitrile 1.76 ㎛ as shown SEM image. Also, the tensile test results were showed that SK Chemical prepreg electro spinning angle of 0 and 90 degrees were 137 MPa and 60 MPa, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.12
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• pp.1723-1728
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• 2018

In order to investigate the voltage drop compensation effect of AT for domestic railway vehicle base, the parameters of AT voltage drop of railroad car base are Z3 (Impedance of feeder line), Xn ( Distance from railroad vehicle to AT to SS), and Dn (distance between both ATs of railway vehicle).In addition, when installed in a SSP for a railway vehicle base, there is no AT and feeder line in the railway vehicle base except for the SSP for the main line and the SSP for the railway vehicle base, so that if zero or ignored, the AC single-phase two- It can be confirmed that it becomes a form.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.32-35
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• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.121-126
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• 2019

The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

• Journal of IKEEE
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• v.18 no.1
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• pp.25-30
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• 2014

In this paper, SCR(Silicon Controlled Rectifier)-based ESD(Electrostatic Discharge) protection circuit for power clamp is proposed. In order to improve latch-up immunity caused by low holding voltage of the conventional SCR, it is modified by inserting n+ floating region and n-well, and extending p+ cathode region in the p-well. The resulting ESD capability of our proposed ESD protection circuit reveals a high latch-up immunity due to the high holding voltage. It is verified that electrical characteristics of proposed ESD protection circuit by Synopsys TCAD simulation tool. According to the simulation results, the holding voltage is increased from 4.61 V to 8.75 V while trigger voltage is increased form 27.3 V to 32.71 V, respectively. Compared with the conventional SCR, the proposed ESD protection circuit has the high holding voltage with the same triggering voltage characteristic.