The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Modeling the Silicon Carbide Schottky Rectifiers

Silicon Carbide 쇼트기 정류기의 모델링

  • Published : 2000.02.01
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Abstract

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

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References

  1. B. J. Baliga, Modern Power Devices, Jone Wiley & Sons, 1987
  2. J.W. Palmour, et al., Silicon carbide for power devices, Proc. ISPSD'97, pp. 25-32, 1997 https://doi.org/10.1109/ISPSD.1997.601423
  3. Dae-Seok Byeon, Min-Koo Han and Yearn-Ik Choi, Analytical solution of the breakdown voltage for 6H-silicon carbide $p^+n$ junction, J. Appl. Phys., Vol.79, No.5, pp. 2796-2797, 1996 https://doi.org/10.1063/1.361113