Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Elimination Characteristics by Impressed Voltage of Holography Grating in Chacogenide Thin Film

  • Lee Ki-Nam (Department of Semiconductor and New Material Engineering, Kwangwoon University) ;
  • Yeo Cheol-Ho (Department of Semiconductor and New Material Engineering, Kwangwoon University) ;
  • Yang Sung-Jun (Department of Semiconductor and New Material Engineering, Kwangwoon University) ;
  • Chung Hong-Bay (Department of Semiconductor and New Material Engineering, Kwangwoon University)
  • Published : 2004.12.01
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Abstract

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

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References

  1. L. F. Johnson, G. W. Kammlott, and K. A. Ingersoll, Appl. Opt. 17, p.1165, 1978 https://doi.org/10.1364/AO.17.001165
  2. R. R. Gerke, T. G. Dubrovina, P. A. Drnitrikov, and M. D. Mikhailov, J. Opt. Technol 64, p. 1008, 1997
  3. H. B. Chung et al., PRICM-3, Vol. 2, p. 701, 1988
  4. K. Tanaka, Rev. Solid State Sci., p. 641, 1990
  5. K. Shimakawa, A. Kolobov, and S.R. Elliot, Adv. Phys., p. 475, 1995
  6. Physics of Optical Recording, Springer Verlag, Berlin, 1993
  7. L. F. Johnson, G. W. Kammlott, and K. A. Ingersoll, Appl. Opt. 17, p. 1165, 1978 https://doi.org/10.1364/AO.17.001165
  8. R. R. Gerke, T. G. Dubrovina, P. A. Drnitrikov, and M. D. Mikhailov, J. Opt. Technol 64, p. 1008, 1997
  9. S. Zembutsu, Y. Toyoshima, T. Igo, and H. Nagai, Appl. Opt. 14, p. 3073, 1975 https://doi.org/10.1364/AO.14.003073

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