• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.9
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.236-241
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• 2001

This paper presents a novel prototype of active voltage-clamping capacitor-assisted edge resonant soft switching PWM inverter operating at a constant frequency variable power (VPCF) regulation scheme, which is suitable for consumer high-power induction-heating cooking appliances. New generation IGBT with a trench gate is particularly improved in order to reduce conduction loss due to its lowered saturation voltage characteristics. The soft switching load resonant and quasi-resonant inverter designed distinctively using the latest IGBTs is evaluated from an experimental point of view.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.6
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• pp.564-571
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• 2001

This paper presents the VLSI design of highly efficient low voltage DC/DC converter for portable devices. All active devices are integrated on a single chip using a standard 0.65$\mu\textrm{m}$ CMOS process. The converter operates at the switching frequency of 1MHz for reducing the size of passive elements and uses a ZVS for minimizing the switching loss at high frequency. Simulation results show that the circuit can achieve a 95% efficiency when the output voltage is controlled to be 2V with the load of lW.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1190-1199
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• 2015

This paper presents a new resonant converter to achieve the soft switching of power devices. Two full-bridge converters are connected in series to clamp the voltage stress of power switches at V_in/2. Thus, power MOSFETs with a 500V voltage rating can be used for 800V input voltage applications. Two flying capacitors are connected on the AC side of the two full-bridge converters to automatically balance the two split input capacitor voltages in every switching cycle. Two resonant tanks are used in the proposed converter to share the load current and to reduce the current stress of the passive and active components. If the switching frequency is less than the series resonant frequency of the resonant tanks, the power MOSFETs can be turned on under zero voltage switching, and the rectifier diodes can be turned off under zero current switching. The switching losses on the power MOSFETs are reduced and the reverse recovery loss is improved. Experiments with a 1.5kW prototype are provided to demonstrate the performance of the proposed converter.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.8
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• pp.113-122
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• 1999

A new resonant switching Watkins-Johnson converter was proposed, which minimizes the switching loss and is well suited for high-frequency operation. The steady-state analyses revealed that the voltage gain of the proposed converter is solely determined by the switching frequency. Consequently, to regulate the output voltage of the converter for variable load current the switching frequency should be varied accordingly. Based on the results of analyses, an optimum design procedure for the resonant component values is proposed, which minimized the voltage stress of power switch while maintaining the desired property of zero-voltage switching. Finally, accuracy of analyses and validity of an optimum design procedure are verified on an experimental resonant switching Watkins-Johnson converter prototype.

• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.4
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• pp.312-321
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• 2013

In this paper, high efficiency control method for flyback inverter with synchronous rectifier(SR) based on photovoltaic AC modules is proposed. In this control method, the operation of SR is classified according to the voltage spike across main switch SP. When the voltage spike across SP is lower than the rating voltage of SP, the operation of active clamp circuit is interrupted for reducing the switching loss of auxiliary switch. In this time, the SR is operated for soft-switching of SP. When the voltage spike across Sp is higher than the rating voltage of SP, the operation of active circuit is activated for reducing the voltage spike. The SR is operated for reducing the conduction loss of secondary output diode. Thus, a switching loss of the main switch can be reduced in low power region, and weighted-efficiency can be improved. A theoretical analysis and the design principle of the proposed method are provided. And validity is confirmed through simulation and experimental results.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.11-116
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• 2000

A topology decreased switching loss and voltage stress by zero voltage switching is presented in this paper. Generally, Switching mode converting productes voltage stress and power losses due to excessive voltage and current. which affect to performance of power supply and reduce overall efficiency of equipments. Virtually, In flyback converter, transient peak voltage and current at switcher are generated by parasitic elements. To solve these problems, present ZVS flyback converter topology applied a auxiliary circuit. Incorporation of auxiliary circuit into a conventional flyback topology serves to reduce power losses and to minimize switching voltage stress. Snubber capacitor in auxiliary circuit serves ZVS state by control voltage variable time at turn on and off of main switch, then reduces voltage stress and power losses. The proposed converter has lossless switching in variable load condition with wide range. A detailed analysis of the circuit is presented and the operation procedure is illustrated. A (50W 100kHz prototype) ZVS flyback converter using a auxiliary circuit is built which shows an efficiency improvement as compared to a conventional hard switching flyback converter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.487-490
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• 2001

Residual DC voltage of the in-plane switching (IPS)-liquid crystal display(LCD) by voltage-transmittance (V-T) hysteresis method was studied. Several IPS-LCD which have different concentrations of cynao LCs and different resistivities of fluorine LCs were fabricated. We found that the residual DC voltage of the IPS-LCD was decreasing with increasing concentration of cyano LCs and increasing with decreasing specific resistivity of fluorine LC materials. The residual DC voltage property can be improved by low molecular weight and high polarity of cyano LC.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.49 no.11
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• pp.558-565
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• 2000

In this paper, we propose a method for mitigating for mitigating the effect of voltage of voltage sag in radial power distribution systems using load transfer switching (LTS). The term of LTS is defined that the weakness load points for voltage sag transfer to the alternative source during the fault clearing practices. The sequenced of proposed LTS method is divided into the search of weakness points for voltage sag using the risk assessment model and transfer behavior of weakness points. The search of weakness point is carried out using the risk assessment model of voltage sag and Monte Carlo simulation method and the historical reliability data in Korea Electric Power Corporation (KEPCO) are also used. Through the case studies, we verify the effectiveness of proposed LTS method and present the searching method of effective application points of LTS method using the risk assessment model.