• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.181-185
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• 2000

To get high efficiency in variable speed control of induction motor it is required that the vector control should be separated from flux components current and torque component current. In this paper the vector control is modeled by the estimation of the stator flex. Representing induction motor speed controller as a digital system with he use of he 32bit DSP improves the motor control performance The IGBT is used as the switching device and the validity of the proposed vector control is proved through voltage current wave and the characteristics of the velocity response as the drive circuit being simplified

• 조명전기설비학회논문지
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• 제24권4호
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• pp.81-94
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• 2010

본 논문에서는 고효율 공진형 비대칭 하프브리지 플라이백컨버터가 제안된다. 컨버터의 1차측 하프브리지 회로는 공진커패시턴스와 변압기 누설인덕턴스를 이용하여 비대칭 펄스폭변조(PWM; Pulse-Width Modulation) 방식에 의한 소프트스위칭 형태로 동작한다. 그리고 컨버터 2차측의 플라이백 회로는 간단한 구동회로에 의해 새로운 전압구동방식으로 동작하는 동기정류기를 이용한다. 제안된 컨버터는 이렇게 하여 컨버터의 전체효율을 향상시킨다. 또한 본 논문에서는 제안된 컨버터의 동작원리를 모드별로 설명하고 컨버터 설계 시의 고려사항과 프로토타입 컨버터의 설계 예를 각각 제시한다. 그리고 본 논문에서 제안하는 전압구동방식으로 동작하는 동기정류기의 간단한 구동기법에 관하여 간략하게 설명한다. 설계된 프로토타입 컨버터는 광범위 입력전압(교류 $V_{in,rms}$=75~265[V])이 가능하며 5[V]의 직류 출력전압과 100[W]의 출력전력을 가진다. 제안된 컨버터의 우수한 성능을 입증하기 위하여 설계된 파라미터로써 프로토타입 컨버터를 제작하여 실험하였으며, 이를 통하여 제안된 컨버터의 우수한 성능을 보인다.

• 한국산학기술학회논문지
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• 제13권4호
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• pp.1777-1783
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• 2012

본 논문에서는 DC모터의 출력특성을 개선할 수 있는 새로운 구조의 DC모터 구동회로를 설계하였고 이 회로를 이용한 콘트롤러를 개발하였다. 설계된 구동 회로에 의하여 콘트롤러는 자체발진회로의 스위칭 신호를 갖는 트랜스포머를 이용하여 연속적으로 DC모터를 구동할 수 있다. 또한 최대속도시, 제어회로의 기준전압 값을 삼각파보다 높게 유지할 수 있고 모터 구동 FET를 항상 온 값을 가지도록 하여 최대출력을 얻을 수 있도록 한다. 제안된 구동회로를 활용하여 24V-500W급 DC모터속도 컨트롤러를 개발하였고 소형전동차를 제작하고 구동시험을 실시하였다. 구동테스트 및 특성 측정결과, 구동전류 12A로써 DC모터의 전진 및 후진 속도를 연속 가변 할 수 있음을 보였다. 그 밖에 과전류 감시기능, 모터과열 감시기능의 정상동작을 확인하였으며, 배터리 잔량이 20~100%까지 6단계로 표시할 수 있음을 확인하였다.

• ETRI Journal
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• 제29권2호
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• pp.212-218
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• 2007

A novel low-voltage CMOS current feedback operational amplifier (CFOA) is presented. This realization nearly allows rail-to-rail input/output operations. Also, it provides high driving current capabilities. The CFOA operates at supply voltages of ${\pm}0.75V$ with a total standby current of 304 ${\mu}A$. The circuit exhibits a bandwidth better than 120 MHz and a current drive capability of ${\pm}1$ mA. An application of the CFOA to realize a new all-pass filter is given. PSpice simulation results using 0.25 ${\mu}m$ CMOS technology parameters for the proposed CFOA and its application are given.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1996년도 Proceedings of the Korea Automatic Control Conference, 11th (KACC); Pohang, Korea; 24-26 Oct. 1996
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• pp.207-210
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• 1996

This paper describes the analysis of the operation of the switched snubber in order to depress the surge voltage in the MOS-FET inverter. In this paper, the N-channel MOS-FET which operates faster than the P-channel MOS-FET was used for the inverter circuit. So, the inverter and switched snubber can operate at high-frequency in the order of MHz. The cause of generating the surge voltage in the high frequency inverter has been cleared, and then how to depress the surge voltage using the switched snubber consisting of an N-channel MOS-FET has been given. Furthermore, described is the power loss within the switched snubber which is made of an N-channel MOS-FET. The inverter having the N-channel MOS-FET used as a switched snubber can drive such a low impedance load such as mega-sonic transducer for a mega-sonic studied cleaner sufficiently.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권8호
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• pp.475-481
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• 2002

In this paper the new converter topology using single-Phase full bridge inverter for the switched reluctance motor drives is proposed. The proposed SRM drives are supplied by the AC pulse voltage source, while the conventional drives are supplied by the DC voltage source. Speed of the SRM is controlled by adjusting the frequency and the multitude of output current of inverter. The SRM using the proposed converter reduces the switching loss and the machine core loss, and has ability to pre-regulate the input voltage. The total number of power switches become fewer than another topology as a number of stator poles becomes more. Power circuit of an inverter is simpler and its volume is smaller because the module device involving several switches is used as an inverter.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.