• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.181-185
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• 2000

To get high efficiency in variable speed control of induction motor it is required that the vector control should be separated from flux components current and torque component current. In this paper the vector control is modeled by the estimation of the stator flex. Representing induction motor speed controller as a digital system with he use of he 32bit DSP improves the motor control performance The IGBT is used as the switching device and the validity of the proposed vector control is proved through voltage current wave and the characteristics of the velocity response as the drive circuit being simplified

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.81-94
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• 2010

This paper presents a high efficiency resonant asymmetrical half-bridge flyback converter. The primary half-bridge circuit of the converter operates by a soft-switching type using the asymmetrical pulse-width modulation (PWM) method with the resonant capacitance and transformer leakage inductance. The secondary flyback circuit of the proposed converter utilizes a synchronous rectifier, which operates by a new voltage-driven method with a simple drive circuit. Thus the proposed converter improves the total efficiency. This paper explains the operational principle of the proposed converter by each mode and shows the converter design consideration and a design example for the prototype converter, respectively. After that, the proposed simple driving technique of the synchronous rectifier by a voltage-driven method is explained, briefly. The designed prototype converter has wide input voltage (AC $V_{in,rms}$=75~265[V]), 5[V] DC output voltage, and 100[W] output power. To verify the excellent performance of the proposed converter, the designed prototype is implemented and experimented. The good performance of the proposed converter is shown through the experimental results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.4
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• pp.1777-1783
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• 2012

In this paper, a new motor driving circuit is designed to improve the output performance of DC motor, and a controller is developed with the designed circuit. By the designed driving circuit, a controller can continuously drive DC motors by a transformer which has switching signals of a self-generated circuit to operate it. And while the DC motor have a maximum velocity, the reference voltage can be maintained higher value than that of triangle voltage and it makes the DC motor driving transistor ON and maximum power. A 24V-500W DC motor controller is developed with the proposed motor driving circuit, and also a small electric car is made and the driving test of it is executed. The test results shows that it can continuously control go and back speed of motor with 12A driving current. And also, it is verified that the over current and heat detecting function is operating correctly and the rest value of the used battery can be displayed as 6 step from 20 to 100%.

• ETRI Journal
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• v.29 no.2
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• pp.212-218
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• 2007

A novel low-voltage CMOS current feedback operational amplifier (CFOA) is presented. This realization nearly allows rail-to-rail input/output operations. Also, it provides high driving current capabilities. The CFOA operates at supply voltages of ${\pm}0.75V$ with a total standby current of 304 ${\mu}A$. The circuit exhibits a bandwidth better than 120 MHz and a current drive capability of ${\pm}1$ mA. An application of the CFOA to realize a new all-pass filter is given. PSpice simulation results using 0.25 ${\mu}m$ CMOS technology parameters for the proposed CFOA and its application are given.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.207-210
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• 1996

This paper describes the analysis of the operation of the switched snubber in order to depress the surge voltage in the MOS-FET inverter. In this paper, the N-channel MOS-FET which operates faster than the P-channel MOS-FET was used for the inverter circuit. So, the inverter and switched snubber can operate at high-frequency in the order of MHz. The cause of generating the surge voltage in the high frequency inverter has been cleared, and then how to depress the surge voltage using the switched snubber consisting of an N-channel MOS-FET has been given. Furthermore, described is the power loss within the switched snubber which is made of an N-channel MOS-FET. The inverter having the N-channel MOS-FET used as a switched snubber can drive such a low impedance load such as mega-sonic transducer for a mega-sonic studied cleaner sufficiently.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the KIPE Conference
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• 1996.06a
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.8
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• pp.475-481
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• 2002

In this paper the new converter topology using single-Phase full bridge inverter for the switched reluctance motor drives is proposed. The proposed SRM drives are supplied by the AC pulse voltage source, while the conventional drives are supplied by the DC voltage source. Speed of the SRM is controlled by adjusting the frequency and the multitude of output current of inverter. The SRM using the proposed converter reduces the switching loss and the machine core loss, and has ability to pre-regulate the input voltage. The total number of power switches become fewer than another topology as a number of stator poles becomes more. Power circuit of an inverter is simpler and its volume is smaller because the module device involving several switches is used as an inverter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.