• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.788-791
• /
• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Current Photovoltaic Research
• /
• 제10권1호
• /
• pp.28-32
• /
• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• 대한화학회지
• /
• 제55권1호
• /
• pp.98-103
• /
• 2011

본 연구는 자외선 흡수제로 사용되는 benzophenone계(group) 및 높은 굴절률과 화학적, 물리적으로 매우 안정한 물질로 알려진 $TiO_2$를 기존의 재료에 첨가하여 자외선 차단 기능을 가진 고분자 재료를 중합하였다. 중합 결과 생성된 고분자의 자외선 흡수 정도를 기존의 재료들과 비교하였으며, 제조된 콘택트렌즈의 함수율, 굴절률 및 광투과율등의 기본적인 물성을 측정하였다. 측정 결과, 자외선 흡수제를 첨가한 콘택트렌즈의 굴절률과 함수율은 각각 1.430~1.440, 35.0~45.0의 값들로 나타나 기존의 콘택트렌즈와 비슷한 결과를 나타내었다. 또한 각 파장대별 광투과율에서는 자외선 흡수제를 넣지 않은 콘택트렌즈에서는 UV-A, UV-B, 가시광선 투과율이 각각 89%, 88%, 89%로 나타나 자외선 투과율이 매우 높았으나, 2-hydroxy-4-methoxy-benzophenone와 2,4-dihydroxy-benzophenone을 첨가한 콘택트렌즈의 경우, 각각 UV-A 0%, UV-B 6%의 투과율을 나타내어 자외선 차단 효과가 있는 것으로 나타났다. 또한 $TiO_2$를 첨가한 콘택트렌즈의 경우, 각각 UV-A 6%, UV-B 51%의 투과율을 나타내어 자외선 차단 효과가 다소 있는 것으로 나타났다. 가시광선 투과율은 모두 77~89%로 콘택트렌즈의 가시광선 투과율의 조건에 만족함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
• /
• pp.144-145
• /
• 2006

In this study, the Al doped ZnO thin films were prepared by the facing targets sputtering(FTS) apparatus. The electrical characteristics, transmittance of ITO thin films were investigated as a function of varying input current and oxygen gas flow rate. As a result, the ITO thin film was prepared with a resistivity $6{\times}10-4[{\Omega}-cm]$ and transmittance 80% at visible range.

• 대한치과기공학회지
• /
• 제42권2호
• /
• pp.65-71
• /
• 2020

Purpose: To know the transmittance of light when wearing shading goggles and to protect eyes from blue light emitted from dental scanner when using CAD/CAM works or inducing polymerization reactions of dental resin with curing unit and infrared light occurred when melting Dental precious metal and non-precious metal alloys. Methods: By measuring and comparing the average transmittances of blue light, visible light and infrared ight by using UV-Vis Spectrophotometer analysis measuring instrument, I compared 3 GREEN Color Goggles worn when casting Dental precious metal and non-precious metal alloys, and compared each of YELLOW, ORANGE Color Goggles worn when using Dental CAD/CAM scanners and Light Curing(LED) the Dental resin. Results: In blue light range, YELLOW Color Goggles are more effective than ORANGE Color Goggles. In infrared light range, No.12 Goggles are more effective than No.10 and No.11 Goggles. Conclusion: When wearing blue light shading goggles to avoid harmful blue light occurred in using dental scanner and curing light, and when wearing infrared light shading goggles to avoid harmful infrared light during casting, to avoid the Side Effects like transmittance rate of blue light and infrared light goggles becomes too high to block appropriate amount of harmful light or too low that causing lower image clarity.

• 한국안광학회지
• /
• 제4권1호
• /
• pp.45-49
• /
• 1999

고투과율 박막을 제조하기 위하여 실리콘 알콕사이드와 붕산을 출발물질로 사용하고 dip-coating 기술을 이용하여 현미경을 슬라이드 유리 위에 박막을 제조 하였다. 시간에 따른 졸의 정도를 조사하여 박막의 두께를 조절하였고, $B_2O_3$의 량을 5, 10, 15, 20 mol%로 변화하여 박막을 제조하였다. 조성변화에 따른 박막의 가시영역에서의 투과율과 적외선 투과율을 측정하였으며, 이에 따른 박막의 굴절율 변화를 조사하였다. 15 mol% 의 $B_2O_3$가 첨가 되었을 때 가시영역에서의 투과율은 최대였으며, 굴절율은 최소값을 나타냈다. 그러나 20mol%의 $B_2O_3$가 첨가되면 오히려 투과율이 감소하였으며, 우리는 이를 굴절율과 연관지어 설명하고자 한다.

• 한국세라믹학회지
• /
• 제33권11호
• /
• pp.1195-1202
• /
• 1996

To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

• Transactions on Electrical and Electronic Materials
• /
• 제14권1호
• /
• pp.9-11
• /
• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1039-1042
• /
• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.554-557
• /
• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$(90mol%) and $SnO_{2}$(10mol%). We prepared ITO thin films with substrate temperature 200 to $400^{\circ}C$ and annealing temperature 200 to $500^{\circ}C$. Good polycrystalline-structured ITO films with a low electrical resistivity of $3.4{\times}10^{-4}\Omega{\cdot}cm$ have been obtained. The visible light transmittance of all obtained films was over 80 %.