Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Oxygen gas dependence of the ITO thin film

ITO 박막의 산소 가스 의존성

  • 김경환 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과)
  • Published : 2006.05.19
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Abstract

In this study, the Al doped ZnO thin films were prepared by the facing targets sputtering(FTS) apparatus. The electrical characteristics, transmittance of ITO thin films were investigated as a function of varying input current and oxygen gas flow rate. As a result, the ITO thin film was prepared with a resistivity $6{\times}10-4[{\Omega}-cm]$ and transmittance 80% at visible range.

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