• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• 화약ㆍ발파
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• 제13권3호
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• pp.19-30
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• 1995

NATM as method of tunneling has been applied to construction of domestic subway, roads, rail way, water way etc. Accordingly, we have NATM's many drafts and constructional results, but many problems and accidents have occurred under construction of tunnel using NATM for shortage of technical data. Poorness of constructional improvement, systemic inconsistency etc. Especially, everyone was shocked at Gupo's train wrecking accident lately. The purpose of this thesis is presentation of means for setting technical problems, by looking into Gupo's train wrecking accident and home records that applying NATM in tunneling failed, to minimize future safety accidents we find that the general problems of home fifteen sites having occured accidents is badly geological survey, nonconfirmationi of base rock's state, formal measuring management, shortage of specialists, systemical discrepancy and that disregarding NATM's rules makes general problems. The results of this study are Summarised as follows : 1. We advise repletion of design standards to practice crosshole test for confirming connected rock base on vertical section of tunnel. 2. We advise to practice pre0boring and pre-grouting for a weak layer difficult in applying NATM. 3. We advise systemic improvements that field servicer can construct tunnel of his own free will considering base rock's state at tunnel . 4. We advise that specialist, who can make a conduct and supervise above mentioned items as well as measuring management, should be posted at field.

• 한국안전학회지
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• 제9권4호
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• pp.92-102
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• 1994

NATM as method of tunneling has been applied to construction of domestic subway, roads, rail way, water way etc. Accordingly we have NATM's many drafts and constructional results, but many problems and accidents have occurred under construction of tunnel using NATM for shortage of technical data, poorness of constructional improvement, systemic inconsistency etc. Especially, everyone was shocked at Gupo's train wrecking accident lately. The purpose of this thesis is presentation of means for settling technical problems, by looking into Gupo's train wrecking accident and home records that applying NATM in tunneling failed, to minimize future safety accidents we find that the general problems of home fifteen sites haying occured accidents is badly geological survey, nonconfirmation of base rock's state, formal measuring management, shortage of specialists, systemical discrepancy and that disregarding NATM's rules makes general problems. The results of this study are summarised as follows ; 1. We advise repletion of design standards to practice crosshole test for confirming connected rock base on vertical section of tunnel. 2. We advise to practice pre-boring and pre-grouting for a weak layer difficult in applying NATM. 3. We advise systemic improvements that field servicer can construct tunnel of his own free will considering base rock's state at tunnel. 4. We advise that specialist, who can make a conduct and supervise above mentioned items as well as measuring managements, should be posted at field.

• 한국정보전자통신기술학회논문지
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• 제13권1호
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• pp.48-57
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• 2020

Wireless charger, USB type-C 등의 응용에서 사용되는 MCU는 추가 공정 마스크가 작으면서 셀 사이즈가 작은 MTP 메모리가 요구된다. 기존의 double poly EEPROM 셀은 사이즈가 작지만 3~5 장 정도의 추가 공정 마스크가 요구되고, FN 터널링 방식의 single poly EEPROM 셀은 셀 사이즈가 큰 단점이 있다. 본 논문에서는 vertical PIP 커패시터를 사용한 110nm MTP 셀을 제안하였다. 제안된 MTP 셀의 erase 동작은 FG와 EG 사이의 FN 터널링을 이용하였고 프로그램 동작은 CHEI 주입 방식을 사용하므로 MTP 셀 어레이의 PW을 공유하여 MTP 셀 사이즈를 1.09㎛2으로 줄였다. 한편 USB type-C 등의 응용에서 요구되는 MTP 메모리 IP는 2.5V ~ 5.5V의 넓은 전압 범위에서 동작하는 것이 필요하다. 그런데 VPP 전하펌프의 펌핑 전류는 VCC 전압이 최소인 2.5V일 때 가장 낮은 반면, 리플전압은 VCC 전압이 5.5V일 때 크게 나타난다. 그래서 본 논문에서는 VCC detector 회로를 사용하여 ON되는 전하펌프의 개수를 제어하여 VCC가 높아지더라도 펌핑 전류를 최대 474.6㎂로 억제하므로 SPICE 모의실험을 통해 VPP 리플 전압을 0.19V 이내로 줄였다.

• Journal of Periodontal and Implant Science
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• 제51권6호
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• pp.398-408
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• 2021

Purpose: In this study, we aimed to evaluate the clinical validity of the modified tunneling technique using minimal soft tissue harvesting and volume-stable collagen matrix in the anterior mandible. Methods: In total, 27 anterior mandibular teeth and palatal donor sites in 17 patients with ≥1 mm of gingival recession (GR) were analyzed before and after root coverage. For the recipient sites, vertical vestibular incisions were made in the interdental area and a subperiosteal tunnel was created with an elevator. After both sides of the marginal gingiva were tied to one another, a prepared connective tissue graft and volume-stable collagen matrix were inserted through the vestibular vertical incision and were fixed with resorbable suture material. The root coverage results of the recipient site were measured at baseline (T₀), 3 weeks (T₃), 12 weeks (T₁₂), and the latest visit (T_l). For palatal donor sites, a free gingival graft from a pre-decided area avoiding the main trunk of the greater palatine artery was harvested using a prefabricated surgical template at a depth of 2 mm after de-epithelization using a rotating bur. In each patient, the clinical and volumetric changes at the donor sites between T₀ and T₃ were measured. Results: During an average follow-up of 14.5 months, teeth with denuded root lengths of 1-3 mm (n=12), 3-6 mm (n=11), and >6 mm (n=2) achieved root coverage of 97.01%±7.65%, 86.70%±5.66%, and 82.53%±1.39%, respectively. Miller classification I (n=12), II (n=10), and III (n=3) teeth showed mean coverage rates of 97.01%±7.65%, 86.91%±5.90%, and 83.19%±1.62%, respectively. At the donor sites, an average defect depth of 1.41 mm (70.5%) recovered in 3 weeks, and the wounds were epithelized completely in all cases. Conclusions: The modified tunneling technique in this study is a promising treatment modality for overcoming GR in the anterior mandible.

• 한국터널지하공간학회 논문집
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• 제11권2호
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• pp.199-211
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• 2009

쾌적한 지상공간의 삶을 위하여 전세계적으로 지하공간 개발이 활발히 이루어지고 있으며, 그 규모도 점차 대형화하고 었는 추세이다. 하지만 밀집한 상부 구조물에 대한 피해 우려와 기존 지하공간과의 간섭 등으로 인하여 새로운 지하공간 건설 시 많은 주의가 필요한 실정이다. 천층에 굴착되는 터널의 경우, 굴착으로 인한 상부 구조물의 피해를 최소화하기 위하여 구조물 하부 및 터널 주변지반의 보강이 필수적이나 그 적정범위에 대한 기준은 마련되어있지 않은 설정이다. 본 논문에서는 직경 20 m의 대단면 터널이 구조물 하부에 시공되는 경우에 대해서 수치해석을 실시하여, 터널과 구조물간의 수직 및 수평이격거리에 따른 구조물 피해정도를 조사하였고 보강이 필요한 경우에는 각각의 경우별로 최적의 보강범위를 제시하였다. 본 논문에서 다룬 지반조건에 대한 해석결과, 수직이격거리가 0.50(D 터널등가직경)인 경우에는 수평이격거리가 0D에 근접하면서부터 보강이 필요한 것으로 나타났으며, 수직이격거리가 0.75D인 경우에는 터널이 구조물 하부에 위치할 때 보강이 필요하였다. 또한 수직이격거리가 1D 이상인 경우에는 수평이격거리에 상관없이 보강이 필요 없는 것으로 나타났다. 구조물 기초지반 보강범위는 갚이 7 m, 폭은 구조물 전제를 포함하여 터널 측벽에서 5 m 벗어난 곳까지이다. 상황에 따라 적절한 보강공법을 선택하였을 경우, 이와 같은 보강범위는 구조물 안정에 충분한 것으로 나타났다.

• Geomechanics and Engineering
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• 제22권6호
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• pp.497-507
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• 2020

This paper presents the results of a three-dimensional numerical investigation into the effect of new tunnel construction on structural performance of existing tunnel lining. A three-dimensional finite difference model, capable of modelling the tunnel construction process, was adopted to perform a parametric study on the spatial variation of new tunnel location with respect to the existing tunnel with emphasis on the plan crossing angle of the new tunnel with respect to the existing tunnel and the vertical elevation of the new tunnel with respect to the existing one. The results of the analyses were arranged so that the effect of new tunnel construction on the lining member forces and stresses of the existing tunnel can be identified. The results indicate that when a new tunnel underpasses an existing tunnel, the new tunnel construction imposes greater impact on the existing tunnel lining when the two tunnels cross at an acute angle. Also shown are that the critical plan crossing angle of the new tunnel that would impose greater impact on the existing tunnel depends on the relative vertical location of the new tunnel with respect to the existing one, and that the overpassing new tunnel construction scenario is more critical than the underpassing scenario in view of the existing tunnel lining stability. Practical implications of the findings are discussed.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.17-20
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• 2006

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.57-57
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• 2010

Sb(111) is a spin textured surface due to the strong spin-orbit coupling, often viewed as a proto-type topological insulator. We used scanning tunneling microscopy (STM) to characterize various Mn-induced subsurface defects existing at the surface of Mn-doped Sb at 50 K. Our STM images show that every defect exhibits 3-fold symmetry with a single rotational orientation and can be categorized by their shapes and sizes. We found more than 10 types of subsurface defects with distinctive orders, which allows the resolution of the vertical positions of the magnetic dopants lying more than 10 layers down from the surface. We will discuss about our findings in comparison with theoretical results.