• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.216-221
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• 2010

The microstructure, electrical properties, and DC-accelerated aging behavior of the Zn-Pr-Co-Cr-Y-Er (ZPCC-YE) varistors were investigated for different amounts of erbium oxide ($Er_2O_3$). The microstructure consisted of zinc oxide grain and an intergranular layer ($Pr_6O_{11}$, $Y_2O_3$, and $Er_2O_3$-rich phase) as a secondary phase. The increase of $Er_2O_3$ amount decreased the average grain size and increased the sintered density. As the $Er_2O_3$ amount increased, the breakdown field increased from 5094 V/cm to 6966 V/cm and the nonlinear coefficient increased from 27.8 to 45.1. The ZPCC-YE varistors added with 0.5 to 1.0 mol% $Er_2O_3$ are appropriate for high voltage, with high nonlinearity and stability against DC-accelerated aging stress.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.175-178
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• 2004

The microstructure, electrical, and clamping voltage characteristics of ZPCCD-based varistors were investigated at sintering time of 2 and 3 h. The average grain size and density of varistor were increased from 15.2 to 19.0 and from 5.5 to 5.6 $g/cm^3$ with sintering time, respectively. The nonlinear exponent was 65.4 for 2 h and 37.4 for 3 h, and leakage current was 0.54 ${\mu}A$ for 2 h and 0.67 ${\mu}A$ for 3 h. The dissipation factor was 0.0397 for 2 h and 0.0457 for 3 h. The clamping voltage ratio at surge current($8/20{\mu}s$) of 10~300 A was increased in the range of 1.56~2.17.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1471-1473
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• 2000

In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data were conducted. As the result it was showed that the equivalent circuit model considered the gram-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the varistor-voltages and the nonlinear coefficient of varistors. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.637-639
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• 1999

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, ZnO varistors are chosen by several electrical parameters according to their applications, namely 1mA DC voltage, 1eakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. But these Parameters have scattering properties due to the nonuniformity of electrical characteristics. In this study, the effect of the microstructrual nonuniformity on the surge absorption capability of ZnO varistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.338-341
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• 2006

This paper presents the leakage current characteristics of ZnO varistors exposed to the $8/20{\mu}s$ lightning impulse currents as functions of the number of injection and amplitude of impulse currents. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of $5[kA_p]$ was used. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents were measured under 60 Hz AC voltages. The trend curves of resistive leakage current of ZnO varistors were analytically calculated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.735-744
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• 2000

The electrical procerties and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$ (ZPCCE) based varistors were investigated in the Er$_2$O$_3$content range of 0.0 to 4.0 mol%. ZPCCE ceramics containing 2.0 mol% Er$_2$O$_3$ exhibited the highest density of 5.74 g/㎤ corresponding to 99.3% of theoretical density. The varistors with 0.5 mol% and 2.0 mol% Er$_2$O$_3$exhibited a relatively satisfying nonlinearity, which the nonlinear exponent is 40.50 and 47.15, respectively and the leakage current is 2.66 $mutextrm{A}$, respectively. Under more severe d.c. stress, such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$12h), they showed a very excellent stability, which the variation rate of the variator voltage is -0.89% and -0.15%, the variation rate of the nonlinear coefficient is -4.67% and -3.56%, and the variation rate of leakage current is -6.02% and -19.56%, respectively. It is surely bellived that ZnO-0.5 mol% Pr$_{6}$O$_{11}$-1.0 mol% CoO-0.5 mol% Cr$_2$O$_3$-x mol% Er$_2$O$_3$(x=0.5, 2.0) based varistors will be greatly contributed to develop the advanced Pr$_{6}$O$_{11}$-based ZnO varistors in future.uture. future.uture.