• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1679-1681
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• 1996

ZnO varistor with composition of 89wt%-ZnO, 3.0wt%-$Bi_{2}O_{3}$, 3.6wt%-$Sb_{2}O_{3}$, 1.16wt%-CoO, 0.88wt%-NiO, 0.71wt%-$MnO_2$, 0.93wt%-$Cr_{2}O_{3}$, 0.013wt%-$Al_{2}O_{3}$ was fabricated by sintering methods. The effects of annealing on the J-E characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to annealing. And the conductive mechanism and micostructure of ZnO varistor were researched using I-V meter, SEM and XRD.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.117-120
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• 1999

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made of Matsuoka's composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. The Gas of sintering process was oxygen, nitrogen, argon, air respectively. The microstructure of ZnO varistors be made use of SEM equipment. The condition of DC degradation tests were conducted at $115\pm2^{\circ}C$ for periods up to 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Resistance-frequency and capacitance-frequency analysis are accomplished to the understanding of electrical properties as DC degradation test. From above analysis, it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.556-560
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• 1987

To enhance the breakdown properties of low voltage-oriented ZnO varistor, the samples were fabricated with the amounts of si-oxides and the sintering conditions. And then, to lower the breakdown voltage the $TiO_2$-added samples were fabricated. We investigated the nonlinear exponent, the nonlinear resistance and the V-I characteristics of samples. And we discussed with microstructures by use of SEM and the position of Si by EDS. Si-oxides, especially, largely enhanced the nonlinear exponent. In this case optimum sintering condition was $1200-1250^{\circ}C$-1hr and $TiO_2$ addition lowered the breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.328-329
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• 2005

ZnO 바리스터의 소결조건에 따른 바리스터 특성과 유전특성을 조사하였다. 소결조건에서 소결시간 및 시간에 따라 바리스터 전압의 변화를 볼 수 있었으며 적정소결온도에서 바리스터 전압 $V_{1mA}$ 및 $V_{10mA}/V_{1mA}$특성은 225 ~ 250. 0.85 ~ 0.9의 특성을 얻을 수 있었다. 특히, 유전특성의 경우 주파수에 따라 정전용량의 변화가 높은 온도에서 소결한 경우 높게 나타났으며 적정 소결온도에서는 유전율은 720 ~ 740, 유전손실은 2.5% 이하의 값을 얻을 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.213-216
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• 2014

The microstructure and varistor properties of ZPCCAE ($ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Al_2O_3-Er_2O_3$) ceramics were investigated with different erbium amounts. Analysis of the microstructure indicated that the ceramics consisted of ZnO grains as a bulk phase, and intergranular layers (mixture of $Pr_6O_{11}$ and $Er_2O_3$) as a minor secondary phase. With the increase of the doped erbium amount, the densities of sintered pellets increased from 5.63 to $5.82g/cm^3$, and the average grain size decreased from 9.0 to $5.7{\mu}m$. The increase of the doped erbium amount increased the breakdown field from 2,649 to 5,074 V/cm, and the nonlinear coefficient from 27.6 to 39.1. It was found that in the range of 0.25 to 0.5 mol%, the doped erbium had little effect on the microstructure and electrical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.87-92
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• 1989

We fabricated primary and secondary seed grains. Primary seed grains having larger grain size were obtained under the conditions that were 2.0m/o BaCO$_3$ and 10 hours sintering. The amount of primary seed grain to yield the largest secondary seed grains were choosed as 3 w/o and we fabricated the low voltage varistors which were joined the low voltage-oriented ZnO varistor system made by conventional method with the secondary seed grains. As a result, ZnO varistor showed appoximately 10V/mm of nonlinear resistance and 15-22 of nonlinear exponent.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.355-359
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• 2006

ZnO varistor and GDT(gas discharge tube) have proven to be good protective devices because of their flexibility and high reliability. ZnO varistors are characterized by their excellent nonlinear properties. GDTs are used for applications in communication or signaling circuits because they have very low capacitance. Therefore, It is very important to understand the V-I characteristic of ZnO varistor and GDT for designing SPD to protect apparatus or personnel from high transient voltage. This paper gives experimental V-I characteristic data of ZnO varistor and GDT for protecting electronic equipments from surge up to maximum discharge current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.373-376
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• 2001

When varistors for circuit protection is used at high voltage, it's operation properties were unstable because of leakage current and nonlinear coefficient with grain size. For the purpose of improving of ZnO varistor properties, high voltage ZnO varistor was fabricated with Y$_2$O$_3$addition. Electrical properties were investigated according to sintering conditions and mixing conditions. ZnO varistors was shown ohmic Properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.276-280
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• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.