Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Microstructure and Varistor Properties of ZPCCAE Ceramics with Erbium

  • Nahm, Choon-Woo (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Heo, Jae-Seok (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Lee, Geun-Hyung (Department of Materials & Components Engineering, Dongeui University)
  • Received : 2014.04.14
  • Accepted : 2014.06.02
  • Published : 2014.08.25
Download PDF
⟨ Previous Next ⟩

Abstract

The microstructure and varistor properties of ZPCCAE ($ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Al_2O_3-Er_2O_3$) ceramics were investigated with different erbium amounts. Analysis of the microstructure indicated that the ceramics consisted of ZnO grains as a bulk phase, and intergranular layers (mixture of $Pr_6O_{11}$ and $Er_2O_3$) as a minor secondary phase. With the increase of the doped erbium amount, the densities of sintered pellets increased from 5.63 to $5.82g/cm^3$, and the average grain size decreased from 9.0 to $5.7{\mu}m$. The increase of the doped erbium amount increased the breakdown field from 2,649 to 5,074 V/cm, and the nonlinear coefficient from 27.6 to 39.1. It was found that in the range of 0.25 to 0.5 mol%, the doped erbium had little effect on the microstructure and electrical properties.

Keywords

References

  1. L. M. Levinson and H. R. Philipp, J. Appl. Phys., 46, 1332 (1975) [DOI: http://dx.doi.org/10.1063/1.321701].
  2. L. M. Levinson and H. R. Philipp, Am. Ceram. Soc. Bull., 65, 639 (1986).
  3. T. K. Gupta, J. Am. Ceram. Soc., 73, 1817 (1990) [DOI: http://dx.doi.org/10.1111/j.1151-2916.1990.tb05232.x].
  4. K. Mukae, Am. Ceram. Bull., 66, 1329 (1987).
  5. K. Mukae, K. Tsuda, and S. Shiga, IEEE Tran. Pow. Deliv., 3, 591 (1988) [DOI: http://dx.doi.org/10.1109/61.4296].
  6. K. Mukae, K. Tsuda, and I. Nagasawa, Jpn. J. Appl. Phys., 16, 1361 (1977) [DOI: http://dx.doi.org/10.1143/JJAP.16.1361].
  7. A. B. Alles, R. Puskas, G. Callahan, and V. L. Burdick, J. Am. Ceram. Soc., 76, 2098 (1993) [DOI: http://dx.doi.org/10.1111/j.1151-2916.1993.tb08339.x].
  8. Y. S. Lee, K. S. Liao, and T.-Y. Tseng, J. Am. Ceram. Soc., 79, 2379 (1996) [DOI: http://dx.doi.org/10.1111/j.1151-2916.1996.tb08986.x].
  9. S. Y. Chun and N. Mizutani, Mater. Sci. Eng. B, 79, 1 (2001) [DOI:http://dx.doi.org/10.1016/S0921-5107(00)00552-3].
  10. C. W. Nahm and H. S. Kim, Mater. Lett., 56, 379 (2002) [DOI: http://dx.doi.org/10.1016/S0167-577X(02)00490-1].
  11. C. W. Nahm, C. H. Park, and H. S. Yoon, J. Mat. Sci. Lett., 19, 271 (2000) [DOI: http://dx.doi.org/10.1023/A:1006781823837
  12. C. W. Nahm and C. H. Park, J. Mater. Sci., 35, 3037 (2000) [DOI: http://dx.doi.org/10.1023/A:1004749214640].
  13. C. W. Nahm, J. Eur. Ceram. Soc., 21, 545 (2001) [DOI: http://dx.doi.org/10.1016/S0955-2219(00)00233-8].
  14. C. W. Nahm, Mater. Lett., 47, 182 (2001) [DOI: http://dx.doi.org/10.1016/S0167-577X(00)00262-7].
  15. C. W. Nahm, B. C. Shin, and B. H. Min, Mater. Chem. and Phys., 82, 157 (2003) [DOI: http://dx.doi.org/10.1016/S0254-0584(03)00213-X].
  16. C. W. Nahm, Solid State Commun., 127, 389 (2003) [DOI: http://dx.doi.org/10.1016/S0038-1098(03)00436-8].
  17. C. W. Nahm, J. Mater. Sci.: Mater. Electron., 16, 345 (2005) [DOI: http://dx.doi.org/10.1007/s10854-005-1145-7].
  18. C. W. Nahm, Materials Science and Engineering B, 137, 112 (2007). https://doi.org/10.1016/j.mseb.2006.11.009
  19. C. W. Nahm, Mater. Sci. Bull., 33, 239 (2010) [DOI: http://dx.doi.org/10.1007/s12034-010-0037-5].
  20. J. C. Wurst and J. A. Nelson, J. Am. Ceram. Soc., 55, 109 (1972) [DOI: http://dx.doi.org/10.1111/j.1151-2916.1972.tb11224.x].

Cited by

  1. Improvement of sintering, nonlinear electrical, and dielectric properties of ZnO-based varistors doped with TiO2 vol.25, pp.6, 2016, https://doi.org/10.1088/1674-1056/25/6/068402