• 제목/요약/키워드: Variable Gain Amplifier

검색결과 89건 처리시간 0.027초

5.2 GHz 대역에서 동작하는 기억 기능 특성을 갖는 궤환 회로를 이용한 변환 이득 저잡음 증폭기 설계 (Design of Variable Gain Low Noise Amplifier with Memory Effects Feedback for 5.2 GHz Band)

  • 이원태;정지채
    • 한국전자파학회논문지
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    • 제21권1호
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    • pp.53-60
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    • 2010
  • 본 논문에서는 5.2 GHz에서 입력 신호의 크기에 따라 효율적으로 동작하는 저잡음 증폭기를 0.18 um CMOS 공정을 이용하여 설계하였다. 제안된 회로는 궤환 회로와 2단 저잡음 증폭기로 구성되어 있으며, 궤환 회로의 경우 7개의 함수 블록으로 구성되어 있다. 본 논문에서는 변화되는 신호 전압을 감지하는 것과 이전 상태를 기억하는 저장 회로에 초점을 두어 불필요한 전력 소비를 제거하였다. 기억 기능 특성을 갖는 궤환 회로의 출력값을 이용하여 통제되는 저잡음 증폭기는 11.39 dB에서 22.74 dB까지 변하며, 최고 이득 모드일 때 잡음 지수가 최적화 되도록 설계되었다. 변환 저잡음 증폭기는 1.8 V의 공급 전압에 대해서 5.68~6.75 mW를 소비한다.

Feedforward 방식을 이용한 Predistortor에 관한 연구 (A Study on Predistortor using the Feedforward type)

  • 권성준;임성규;최진일;이상웅;김상태;라극환
    • 전자공학회논문지A
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    • 제31A권5호
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    • pp.68-75
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    • 1994
  • A new Predistortor that is designed using Feedforward type is proposed to overcome the nonlinearity of HPA (High Power Amplifier). HPA has the nonlinearity of the gain compression and phase distorton, so digital communication system of multi-carrier TDMA needs the linear RF transmitter. Using IMD (Intermodulation Distortion) of drive amplifier, as Feedforward type, the inverse IMD is coupled to the main loop with variable attenuators, phase shifters, and sub-amplifiers well designed. At the input of main amplifier, the over-coupled IMD surpresses the main amplifier 's IMD. Adjusting the level and phase of IMD at the sub loop, C/I of HPA is better than before correction.

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2.5V 80dB 360MHz CMOS 가변이득 증폭기 (A 2.5V 80dB 360MHz CMOS Variable Gain Amplifier)

  • 권덕기;박종태;유종근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.983-986
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    • 2003
  • This paper describes a 2.5V 80dB 360MHz CMOS VGA. A new variable degeneration resistor is proposed where the dc voltage drop over the degeneration resistor is minimized and employed in designing a low-voltage and high-speed CMOS VGA. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than 1.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$$\times$360${\mu}{\textrm}{m}$.

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A Highly Linear CMOS Baseband Chain for Wideband Wireless Applications

  • Yoo, Seoung-Jae;Ismail, Mohammed
    • ETRI Journal
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    • 제26권5호
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    • pp.486-492
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    • 2004
  • The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

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Feedforward 구조를 이용한 광대역 SiGe HBT 가변 이득 증폭키의 설계 및 제작 (Design & Fabrication of a Broadband SiGe HBT Variable Gain Amplifier using a Feedforward Configuration)

  • 채규성;김창우
    • 한국통신학회논문지
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    • 제32권5A호
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    • pp.497-502
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    • 2007
  • 피드포워드 방식을 이용하여 광대역, 선형 이득 제어 특성을 갖는 SiGe HBT 가변 이득 증폭기를 설계 및 제작하였다. 가변 이득 증폭기는 능동 발룬, 차동형 주 증폭기, 피드포워드 블록, 전압 조절부로 구성 되었으며, 주 증폭기와 피드포워드 블록의 신호가 역위상으로 상쇄되어 광대역의 선형 이득 제어가 가능하도록 각 부분을 최적화 시켰다. 설계된 가변 이득 증폭기는 STMicroelectronics사(社)의 0.35 ${\mu}m$ Si-BiCMOS 공정을 이용하여 제작하였다. 제작 및 측정 결과, 피드포워드 방식의 가변 이득 증폭기는 4 GHz($4\;GHZ{\sim}8\;GHz$)의 광대역 특성을 나타내었다. 또한, 제작된 가변 이득 증폭기는 6 GHz에서 9.3 dB의 최대 이득과 0.6 - 2.6 V의 조절 전압 인가시 19.6 dB의 이득 조절 범위 특성을 나타내었으며, 8 GHz에서 -3 dBm의 출력 전력 특성을 각각 나타내었다.

능동 상쇄 회로를 이용한 곡면 알루미늄 판의 Backscatter Field 감쇄 연구 (A Study on Backscatter Field Reduction of the Curved Aluminum Plate using Active Cancellation Circuit)

  • 김준환;정용식;천창율
    • 전기학회논문지
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    • 제64권2호
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    • pp.276-279
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    • 2015
  • This paper propose a method to reduce the backscatter field of the curved aluminum plate using the cancellation system. The cancellation circuit is composed of a circulator, a LNA(Low Noise Amplifier), a VGA(Variable Gain Amplifier) and two phase shifters. Prior to experiment, we performed simulations to confirm the possibility using FDTD(Finite Difference Time Domain) simulator. We confirmed that the backscatter field could be reduced by the cancellation circuit when we changed the appropriate gain and phase. Finally, we performed an experiment to verify the performance of the cancellation circuit.

A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • 제29권4호
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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다이오드를 이용한 가변 감쇠기의 설계 및 제작에 관한 연구 (A Study on the Fabrication of Variable Attenuator using a Diode)

  • 전중성
    • Journal of Advanced Marine Engineering and Technology
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    • 제32권1호
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    • pp.147-152
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    • 2008
  • This paper has been fabricated the two different type of variable attenuators using a characteristics of a 3 dB directional coupler and pin diodes. One was not analyzed using the conventional even-odd modes but used simple two-port techniques. The resulting scattering parameters described operation characteristics for the general case where the terminating impedances are equal and unequal. After analyzing resistor role of the ${\pi}$ type fixed attenuator. this paper used a pin diode instead of a resistor. The variable attenuators were fabricated using pin diodes for current-controlled attenuation on the coupled ports of a 3 dB branch-line coupler and ${\pi}$ type fixed attenuator. The realized variable attenuators have more than 33 dB attenuation ranges at 2.1 GHz. and the input and output reflection coefficients are less than -13 dB. These results could be applied to mobile communication systems. It can be varied gain of the power amplifier according to change a outdoor environmental temperature and improved linearity.