• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.232-239
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• 2015

In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1235-1241
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• 2008

Membrane separation is extensively used for water/wastewater treatment because of its efficiency separation processes. However, particles in the feed water can deposit and accumulate on the membrane surface to created cake layer. As a consequence, the selectivity of the membrane and flux through the membrane are decreased, which is called fouling/blocking phenomenon. In order to solve fouling problem, we developed a novel membrane named Carbon Whisker Membrane (CWM) which contains vapor-grown carbon fibers/whiskers on the surface of the membrane and a layer of carbon film coated on the ceramic substrate. We firstly employed polymethyl methacrylate (PMMA) as a testing material to investigate the fouling mechanism. The results suggested that Carbon Whiskers on the surface of the membrane can prevent the directly contact between the membrane body and particles so that the fouling/blocking could not occurred easily compared to the membrane without carbon whiskers. We also researched the relationship with the diameter, density of carbon whisker on the membrane surface and total flux of solutions. Finally, we will be able to control the diameter and density of carbon whiskers on the membrane and existence of carbon whiskers on the membrane, it is important factor, might be prevent fouling/blocking in the water treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.961-968
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• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.344-349
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• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.22 no.12
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• pp.1184-1190
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• 2012

This study is focused on the experimental analysis of the noise induced by phase change of refrigerant at the entrance of capillary tube. The refrigerant is usually two-phase condition when it flowed into the capillary tube. At the entrance of capillary tube, the phase condition of refrigerant is formed by sub-cool control. If it has sufficient sub-cool temperature, all of the vapor refrigerants turned to liquid, which means there is only liquid. Otherwise, the gas is coexisted. Based on this theory, we experiment on each case by changing sub-cool temperature using refrigerant-supplying equipment. The noise level is measured for each case and compared.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Journal of Environmental Impact Assessment
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• v.21 no.5
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• pp.665-681
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• 2012

This study investigates the influence of anthropogenic heat (AH) release on urban boundary layer in the Gyeong-In region using the Weather Research and Forecasting model that includes the Seoul National University Urban Canopy Model (SNUUCM). The gridded AH emission data, which is estimated in the Gyeong-In region in 2002 based on the energy consumption statistics data, are implemented into the SNUUCM. The simulated air temperature and wind speed show good agreement with the observed ones particularly in terms of phase for 11 urban sites, but they are overestimated in the nighttime. It is found that the influence of AH release on air temperature is larger in the nighttime than in the daytime even though the AH intensity is larger in the daytime. As compared with the results with AH release and without AH release, the contribution of AH release on urban heat island intensity is large in the nighttime and in the morning. As the AH intensity increases, the water vapor mixing ratio decreases in the daytime but increases in the nighttime. The atmospheric boundary layer height increases greatly in the morning (0800 - 1100 LST) and midnight (0000 LST). These results indicate that AH release can have an impact on weather and air quality in urban areas.