• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.147.4-147
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.188-189
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• 2009

AAO 템플레이트 기공 안에 기상 중합 방식을 이용하여 Poly(3,4-ethylenedioxythiophene) 전도성 나노 튜브를 제조하였다. PEDOT 나노튜브는 나노 단위의 직경과 마이크로 단위의 길이로 조절이 자유로우며 잘 정렬된 구조를 갖는다. PEDOT 나노 튜브의 전도도는 2000 S/cm로써 박막으로 제조된 것에 비해 향상되었으며, XPS, TEM, SEM와 SPM을 통해 형태 및 특성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.328-328
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• 2011

Wetting phenomena have been heavily studied for industrial and academic researches especially tuning the wettability between hydrophilicity and hydrophobicity. Wicking through the surface texture is shown on superhydrophilic surface while rolling (or dewetting) on the patterns of superhydrophobic surface. These wetting phenomena are known to be affected by surface wettability determined with physical surface patterns as well as chemical composition of surface layer. In this research, we introduce a method to control the wettability of a thin C-SiOx film from hydrophobic to hydrophilic using a mixture gas of HMDSO/$O_2$ by plasma polymerization with rf-CVD (radio frequency-Chemical Vapor Deposition). Wettability was finely controlled by changing the ratio of HMDSO/$O_2$. Hydrophilicity increased as the ratio decreased, while hydrophobicity was enhanced by the ratio. Moreover, fine control from superhydrophilicity to superhydrophobicity was achieved by C-SiOx coating on the Si wafer with prepatterns of submicron-sized pillar array formed by $CF_4$ plasma etching.

• Journal of the Korean Applied Science and Technology
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• v.24 no.1
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• pp.54-60
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• 2007

이 논문에서는 게이트 절연막 위에 vapor deposition polymerization(VDP)방법을 사용하여 성막한 유기 점착층을 진공 열증착하여 유기 박막 트랜지스터(OTFTs)소자를 제작할 수 있음을 증명하였다. 우리가 제작한 Staggered-inverted top-contact 구조를 사용한 유기 박막 트랜지스터는 전기적 output 특성이 포화 영역안에서는 포화곡선을, triode 영역에서는 비선형적인 subthreshold를 확실히 볼 수 있음을 발견했다. $0.2{\mu}m$ 두께를 가진 게이트 절연막위에 유기 점착층을 사용한 OTFTs의 장 효과 정공의 이동도와 문턱전압, 그리고 절멸비는 각각, 약 0.4cm2/Vs, -0.8V, 106 이 측정되었다. 게이트 절연막의 점착층으로써 폴리이미드의 성막을 위해, 스핀코팅 방법 대신 VDP 방법을 도입하였다. 폴리이미드 고분자막은 2,2bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride(6FDA)와 4,4'-oxydianiline(ODA)을 고진공에서 동시에 열 증착 시킨 후, 그리고 $150^{\circ}C$에서 1시간, 다시 $200^{\circ}C$에서 1시간 열처리하여 고분자화된 막을 형성하였다. 그리고 점착층이 OTFTs의 전기적 특성에 주는 영향을 설명하기 위해 비교 연구하였다.

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.61-62
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• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.469-474
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• 2015

In ultrasonic spray pyrolysis deposition, a precursor solution is evaporated by an ultrasonic atomizer, then gas-carried into a furnace where the solute is separated from the water vapor. After condensation, polymerization, and nucleation, the solute oxide forms a thin film. To improve the deposition efficiency, the ultrasonic atomizer was studied to optimize the evaporated gas flow. The vat cover was redesigned, using three versions with different inlet factors being tested through a computational fluid dynamic analysis as well as a water evaporation experiment. The atomization rate with a hemispherical cover with a $30^{\circ}$ inlet was found to be 2.4 times higher than that with the original. This improvement was verified with fluorine-doped tin oxide spray pyrolysis deposition. The film obtained with the modified vat cover was 2.4 times thicker than that obtained with the original vat cover.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1171-1173
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• 1995

Polyimide thin films were fabricated through the vapor deposition polymerization method, and the structure and capacitance characteristics of them were investigated in detail. It was found that the chemical structure and uniformity of the film could be stabilized with curing. The peaks of $720cm^{-l},\;1380cm^{-1}\;and\;1780cm^{-1}$ show C=O stretch mode, C-N stretch mode and carbonyl stretch mode, and those of polyimide which cured over $300^{\circ}C$ were fixed. It was found that capacitance was changed in proportion to temperature.