• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• 대한기계학회논문집B
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• 제24권11호
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• pp.1428-1436
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• 2000

The absorption of vapor involves simultaneous heat and mass transfer in the vapor/liquid system. In this paper, a numerical study for vapor absorption process into LIBr-H$_2$O solution film flowing over helical absorber has been carried out. Axisymmetric cylindrical coordinate system was adopted to model the helical tube and the transport equations were solved by the finite volume method. The effects of operating conditions, such as the cooling water temperature. the system pressure, the film Reynolds number and the solution inlet concentration have been investigated in view of the absorption mass flux and the total absorption mass flux and the total absorption rate. The results for the temperature and concentration profiles, as well as the local absorption mass flux at the helical absorber are presented. It is shown that solution inlet concentration affected other than operation conditions for a mass flux.

• Asian Journal of Atmospheric Environment
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• 제6권3호
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• pp.222-233
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• 2012

The nocturnal low-level jet makes a significant impact on carbon and water exchanges and turbulent mixing processes in the atmospheric boundary layer. This study reports a case study of nocturnal surface fluxes such as $CO_2$ and water vapor in the surface layer observed at a flat and homogeneous site in the presence of low-level jets (LLJs). In particular, it documents the temporal evolution of the overlying jets and the coincident response of surface fluxes. The present study highlights several factors linking the evolution of low-level jets to surface fluxes: 1) wavelet analysis shows that turbulent fluxes have similar time scales with temporal scale of LLJ evolution; 2) turbulent mixing is enhanced during the transition period of low-level jets; and 3) $CO_2$, water vapor and heat show dissimilarity from momentum during the period. We also found that LLJ activity is related not only to turbulent motions but also to the divergence of mean flow. An examination of scalar profiles and turbulence data reveal that LLJs transport $CO_2$ and water vapor by advection in the stable boundary layer, suggesting that surface fluxes obtained from the micrometeorological method such as nocturnal boundary layer budget technique should carefully interpreted in the presence of LLJs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.7-7
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• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• 한국결정성장학회지
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• 제25권1호
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• pp.1-5
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• 2015

AlN 단결정의 특별한 용도로 이를 개발하기 위한 노력이 전 세계적으로 매우 활발하게 이루어지고 있다. 이러한 AlN을 기반으로 하는 자외선 LED는 생활, 의학, 자동자 등에 유용한 용도로서 살균, 정화, 경화 및 분석 등 분야에 이용된다. 이에 실험을 통해 PVT법으로 카본 도가니를 사용하여 AlN 단결정을 성장시켰으며 실험 중 3가지 형태의 도가니를 이용하여 성장에 미치는 영향을 분석하였으며, 그 온도 조건은 $1900{\sim}2100^{\circ}C$이고 실험 압력으로는 1~200 Torr였다. 그 결과, 높이가 높은 형태의 도가니를 사용할 경우 증발량은 기준 형태보다 증가 하는데 그쳤다. 반면, 넓은 형태의 도가니는 더욱 많은 증발양의 증가를 보였으며, 기준 형태에 비하여 훨씬 안정하다는 것을 알았다. 또한, 제한된 크기의 도가니를 이용한 PVT법에서의 도가니 형태의 변화에 따른 결과는 성장률에 따른 최적 조건, 성장 결정의 품질변화 및 성장 조건 안정성에 영향을 주는 것을 알았다.

• 센서학회지
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• 제6권5호
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• pp.414-422
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• 1997

CSVT(close spaced vapor transport)법으로 CdS/CdTe 이종접합 태양전지의 창재에 적합한 낮은 비저항과 적절한 광투과도를 갖는 CdS막을 증착하였다. 기판온도, 분위기압, 소스온도 등의 증착조건에 따른 CdS막의 전기적 및 광학적 특성을 조사하였다. 최적 증착조건은 기판온도 $300^{\circ}C$, 분위기압 100mTorr 및 소스온도 $730^{\circ}C$였으며, 이 때 증착된 CdS 막의 비저항은 $7.21{\times}10^{3}{\Omega}cm$있으며 광투과도는 63%이상이었다. 일반적인 고진공증착법으로 제조된 CdS막에 비해서 결정성이 크게 향상되었고 비저항은 약 3승정도 감소하였으며 광투과도는 비슷하여 창재로서 우수한 특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Progress in Superconductivity
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• 제9권1호
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• pp.5-10
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• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.

• 한국결정성장학회지
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• 제31권2호
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• pp.63-68
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• 2021

본 연구에서는 NbC 코팅된 도가니가 SiC 단결정 품질에 미치는 영향을 조사하였다. 실험은 흑연 도가니와 NbC 코팅된 도가니를 사용하였으며, 두 실험의 결과를 체계적으로 비교 분석하였다. SiC 결정 성장은 Ar 분위기에서 2300℃ 이상의 온도와 5 Torr의 압력조건에서 PVT 법을 사용하여 진행하였다. 성장된 SiC 결정은 양면 그라인딩과 연마 가공 후 Raman 분석을 통해 결정상 분석, HR-XRD 분석으로 결정성을 분석하였다. 또한 KOH 에칭 후 광학현미경 분석과 SIMS 분석으로 결함 밀도 및 불순물 농도를 분석하여 두 웨이퍼의 품질을 비교하였다.

• 한국산학기술학회논문지
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• 제19권10호
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• pp.1-7
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• 2018

이산화주석은 리튬 이온 전지의 Anode 전극물질, 또는 $H_2$, NO, $NO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 이용하여 가스센서로 활용되고 있으며, 나노구조를 갖는 이산화주석의 합성과 관련하여 많은 연구가 활발하게 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체분자의 흡착확률을 높일 수 있으므로 고감도 가스 센서의 구현이 가능하고, Li-ion 이차전지의 경우에도 비정전용량을 향상시킬 수 있다. 본 연구에서는 열화학기상증착 장비를 이용하여 기상수송방법으로 $SnO_2$ 나노구조물을 Si 기판 위에 직접 성장시켰다. 이때 이송가스로 이용되는 고순도 Ar 가스에 고순도 산소가스를 혼합하였고, 산소가스의 혼합량에 따라 다른 형태의 산화주석 나노구조물이 성장되는 것을 확인하였다. 기상수송방법으로 성장된 산화주석 나노구조물의 결정학적 특성은 Raman 분광학 및 XRD 분석을 통하여 확인하였고, 표면형상을 주사전자현미경을 통하여 확인하였다. 분석결과 산화주석 나노구조물은 산소가스 혼합량에 민감하게 영향을 받았으며, 이송가스로 이용되는 고순도 Ar 1000 SCCM에 고순도 산소가스 10 SCCM을 혼합하였을 때, 적당한 두께를 가지면서 Nanodots 형태의 표면형상을 갖는 $SnO_2$ 결정상의 나노구조물이 성장되는 것을 확인하였다.