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http://dx.doi.org/10.6111/JKCGCT.2021.31.2.063

High quality SiC single crystal growth by using NbC-coated crucible  

Kim, Jeong-Hui (Department of Advanced Materials Engineering, Dong-Eui University)
Kim, Woo-Yeon (Department of Advanced Materials Engineering, Dong-Eui University)
Park, Mi-Seon (Department of Advanced Materials Engineering, Dong-Eui University)
Jang, Yeon-Suk (Department of Advanced Materials Engineering, Dong-Eui University)
Lee, Won-Jae (Department of Advanced Materials Engineering, Dong-Eui University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.31, no.2, 2021 , pp. 63-68 More about this Journal
Abstract
This study was focused to investigate the effect of NbC-coated crucible on the quality of the SiC crystals. Then, the different properties between SiC crystals grown in a conventional graphite crucible and NbC-coated crucible were systematically compared. SiC crystals were grown using the Physical Vapor Transport (PVT) method at a temperature of 2300℃ and a pressure of 5 Torr in Ar atmosphere. After grinding and polishing, the polytype of the grown SiC crystal was analyzed using Raman spectroscopy, and crystallinity was confirmed by HR-XRD. Furthermore, the defect density and the concentration of impurities were analyzed by an optical microscope and a SIMS, respectively.
Keywords
Silicon carbide; NbC coated crucible; Physical vapor transport; Crystal quality; Single crystal growth;
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Times Cited By KSCI : 1  (Citation Analysis)
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