Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.7-7
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- 2009
Thermoelectric properties of individual PbTe nanowires grown by a vapor transport method
- Lee, Seung-Hyun (Nanomedical National Core Research Center and Department of Materials Science and Engineering, Yonsei University) ;
- Jang, So-Young (Department of Chemistry, Korea University) ;
- Lee, Jun-Min (Nanomedical National Core Research Center and Department of Materials Science and Engineering, Yonsei University) ;
- Roh, Jong-Wook (Nanomedical National Core Research Center and Department of Materials Science and Engineering, Yonsei University) ;
- Park, Jeung-Hee (Department of Chemistry, Korea University) ;
- Lee, Woo-Young (Nanomedical National Core Research Center and Department of Materials Science and Engineering, Yonsei University)
- Published : 2009.04.03
Abstract
Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as