• Carbon letters
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• 제14권4호
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• pp.247-250
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• 2013

In this study, we present a facile method of fabricating graphene oxide (GO) films on the surface of polyimide (PI) via layer-by-layer (LBL) assembly of charged GO. The positively charged amino-phenyl functionalized GO (APGO) is alternatively complexed with the negatively charged GO through an electrostatic LBL assembly process. Furthermore, we investigated the water vapor transmission rate and oxygen transmission rate of the prepared (reduced GO $[rGO]/rAPGO)_{10}$ deposited PI film (rGO/rAPGO/PI) and pure PI film. The water vapor transmission rate of the GO and APGO-coated PI composite film was increased due to the intrinsically hydrophilic property of the charged composite films. However, the oxygen transmission rate was decreased from 220 to 78 $cm^3/m^2{\cdot}day{\cdot}atm$, due to the barrier effect of the graphene films on the PI surface. Since the proposed method allows for large-scale production of graphene films, it is considered to have potential for utilization in various applications.

• Journal of Mechanical Science and Technology
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• 제19권8호
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• pp.1649-1661
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• 2005

We consider. a horizontal static liquid layer on a planar solid boundary. The layer is evaporating when the plate is heated. Vapor recoil and thermo-capillary are discussed along with the effect of mass loss and vapor convection due to evaporating liquid and non-equilibrium thermodynamic effects. These coupled systems of equations are reduced to a single evolution equation for the local thickness of the liquid layer by using a long-wave asymptotics. The partial differential equation is solved numerically.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.265-268
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• 1997

Electroluminescent(EL) devices are constructed using multilayer organic thin film. A cell structure of glass substrate/Indium-Tinoxide/TPD as a hole transporting layer/Alq3+Rhodamine 101 perchrolate(Red3) as an emitting layer/Alq3 as an electrron transporting layer/Al as an electrode was employed. Optimal thickness of emitting layer in EL cell was performed from the viewpoint of the electronics properties of emitting layers. The general vapor-deposition method was used to control the thickness of omitting layer in EL devices and electro-optical characteristics were measured. It is clarified that controlling thickness of emitting layer in vapor-deposition film had an effect on the change of carrier injection and EL spectrum. The intensity of red omission with luminance of 81cd/$m^2$ was achived at 11V driving voltage. The surface morphology of emitting layer in EL devices was investigated.

• 한국진공학회지
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• 제19권6호
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• pp.495-500
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• 2010

원자층 증착법(ALD: atomic layer deposition)을 이용하여 PES (poly (ether sulfon)) 기판위에 증착 온도, 플라즈마 파워에 따라 $Al_2O_3$와 $TiO_2$ 박막을 증착했다. 공정 조건에 따라 $Al_2O_3$와 $TiO_2$ 박막의 밀도, 탄소의 함유량이 달라지는 것을 알 수 있었으며, 공정 조건을 변화시켜 고밀도의 박막을 얻을 수 있었다. 플라즈마에 의한 PES 기판 손상을 막기 위해 buffer layer를 도입했으며, 또한 박막 내부 결함에 의한 수분 투과를 지연 또는 막기 위해 다층 구조를 증착했다. 이를 분석하기 위해 MOCON test를 이용해 투습률을 조사하였다. 플라스틱 기판에 다층 구조의 무기물 보호막을 적용했을 시 플라스틱 기판의 투습률 특성이 개선되었으며, 수분 투과에 대한 activation energy 또한 증가하는 것을 알 수 있었다.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 대한기계학회논문집
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• 제18권5호
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• pp.1301-1309
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• 1994

A study of heat transfer and thermophoretic particle deposition has been carried out for the Modified Chemical Vapor Deposition(MCVD) process. A new concept utilizing two torches is suggested to simulate the heating effects from repeated traversing torches. Calculation results for the wall temperatures and deposition efficiency are in good agreement with experimental data. The effects of variable properties are included and heat flux boundary condition is used to simulate the moving torch heating. A conjugate heat transfer which includes heat conduction through solid layer and heat teansfer in a gas in a tube is analyzed. Of particular interests are the effects of torch speeds and solid layer thicknesses on the deposition efficiency, rate and the tapered entry length.

• 한국재료학회지
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• 제12권4호
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.659-662
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• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.958-961
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• 2007

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.