• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.7
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• pp.106-115
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• 2002

Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.37-42
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• 2013

Tristructural-isotropic (TRISO)-coated particles were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for use in a very high temperature gas-cooled reactor (VHTR). ZrC as a constituent layer of TRISO coating layers was deposited by a chloride process using $ZrCl_4$ and $CH_4$ source gases in a temperature range of $1400^{\circ}C$ and $1550^{\circ}C$. The change in the microstructure of ZrC depending on the deposition temperature and its effect on the hardness were evaluated. As the deposition temperature increased to $1500^{\circ}C$, the grain size of the ZrC increased and the hardness of the ZrC decreased according to the Hall-Petch relationship. However, at $1550^{\circ}C$, the ZrC layer was highly non-stoichiometric and carbon-rich and did not obey the Hall-Petch relationship in spite of the decrease of the grain size. A considerable amount of pyrolytic carbon at the grain boundaries of the ZrC as well as coarse granular pyrolytic carbon were locally distributed in the ZrC layer deposited at $1550^{\circ}C$. Therefore, the hardness decreased largely due to the formation of a large amount of pyrolytic carbon in the ZrC layer.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.82-85
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• 2010

Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.689-695
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• 2002

Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.184-184
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• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.