한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
권호 표지

Low temperature growth of GaN on sapphire using remote plasma enhanced-ultrahigh vacuum chemical vapor deposition

  • Park, J.S. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Kim, M.H. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Lee, S.N. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Kim, K.K. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Yi, M.S. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Noh, D.Y. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Kim, H.G. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology) ;
  • Park, S.J. (Department of Materials Science and Engineering and Center for Electronic Materials Research, Kwangju Institute of Science and Technology)
  • 발행 : 1998.07.01
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초록

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

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