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A Study on the Characteristics change of WSix Thin Films by S/H Life Time  

정양희 (여수대학교 전기공학과)
강성준 (여수대학교 반도체응용물리학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.6, no.5, 2002 , pp. 689-695 More about this Journal
Abstract
Film compositions are needed in semiconductor manufacturing for such diverse application as production tool qualifications and process development. Surface and interface information is generally provided with Auger electron spectroscopy(AES). In this paper, WSix films were analyzed for structural, electrical, and compositional properties of tungsten silicide thin films produced by low pressure chemical vapor deposition as a function of temperature, DCS post flow, shower head life time, and the silicon to tungsten ratios have been investigated. We find that Si/W composition ratio is increased in the surface and interface of WSix thin films by the DCS post flow process and increasing deposition temperature, respectively. The results obtained in this study are also applicable to process control of WSix deposition for memory device fabrication.
Keywords
Dichlorosiliane; tungsten silicide; AES; LPCVD; DRAM;
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