• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.12-15
• /
• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.11
• /
• pp.2613-2616
• /
• 2009

FeOOH/$TiO_2$, a heterojunction structure between FeOOH and $TiO_2$, was prepared by covering the surface of the $\sim$100-nm-sized FeOOH particles with Degussa P25 by applying maleic acid as an organic linker. Under visible light irradiation (${\lambda}{\geq}$ 420 nm), FeOOH/$TiO_2$ showed a notable photocatalytic activity in removal of gaseous 2-propanol and evolution of $CO_2$. It was found that FeOOH reveals a profound absorption in the spectral range of 400 - 550 nm, and its valence band (VB) level is located relatively lower than that of $TiO_2$. The considerable photocatalytic efficiency of the FeOOH/$TiO_2$ under visible light irradiation was therefore deduced to be caused by the hole transfer between the VB of FeOOH and $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.374-374
• /
• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.344-350
• /
• 1999

The surface chemical structure of three kinds of polyethylene (PE): high density (HD) PE, low density (LD) PE and linear (L)-LDPE exposed to Ar and $O_2$ plasmas has been investigated using XPS. Oxygen was incorporated in a more increased amount for HDPE than for L-LDPE and LDPE. Ar plasma tended to incorporate more oxygen than $O_2$ plasma. The XPS valence band spectra for Ar plasma exhibited a clear peak assigned to $O_2$s character. By chemical derivatization method it was found that the amount of -COOH group at the surface was much greater than that of -OH group. The hydrophilic nature of plasma-treated PE increased in the order: LDPE

• Proceedings of the Korean Vacuum Society Conference
• /
• 1994.02a
• /
• pp.50-50
• /
• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.6
• /
• pp.283-290
• /
• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.5
• /
• pp.217-224
• /
• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.533-538
• /
• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.2
• /
• pp.164-169
• /
• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.35-35
• /
• 2010

Understanding the mechanistic details of heterogeneous catalytic reactions will provide a way to tune the selectivity between various competing reaction channels. In this regard, catalytic decomposition of alcohols over the rutile $TiO_2$(110) surface as a model oxide catalyst has been studied to understand the reaction mechanism employing the temperature-programmed desorption (TPD) technique. The $TiO_2$(110) model catalyst is found to be active toward alcohol dehydration. We find that the active sites are bridge-bonded oxygen vacancies where RO-H heterolytically dissociates and binds to the vacancy to produce alkoxy (RO-) and hydroxyl (HO-). Two protons adsorbed onto the bridge-bonded oxygen atoms (-OH) readily react with each other to form a water molecule at ~500 K and desorb from the surface. The alkoxy (RO-) undergoes decomposition at higher temperatures into the corresponding alkene. Here, the overall desorption kinetics is limited by a first-order decomposition of intermediate alkoxy (RO-) species bound to the vacancy. We show that detailed analysis on the yield and the desorption temperatures as a function of the alkyl substituents provides valuable insights into the reaction mechanism. After the catalytic role of the oxygen vacancies has been established, we employed x-ray photoelectron spectroscopy to further study the surface electronic structure related to the catalytically active defective sites. The defect-related state in valence band has been related to the chemically reduced $Ti^{3+}$ defects near the surface region and are found to be closely related to the catalytic activity of the $TiO_2$(110) surface.