• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.251.1-251.1
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• 2013

Combination of oxidative vacuum annealing and oxygen plasma treatment can serve as a simple and efficient method of line-width modification of imprinted nanopatterns. Since the vacuum annealing and oxygen plasma could lead mass loss of polymeric materials, either one of the process can yield a narrowed patterns. However, the vacuum annealing process usually demands quite high temperatures (${\geq}300^{\circ}C$) and extended annealing time to get appreciable line-width reduction. Although the plasma treatment may be considered as an effective low temperature rapid process for the line-width reduction, it is also suffering for the lowered controllability on application to very fine patterns. We have found that the vacuum annealing temperature can be lowered by introducing the oxygen in the vacuum process and that the combination of oxygen plasma treatment with the vacuum annealing could yield the best result in the line-with reduction of the imprinted polymeric nanopatterns. Well-defined line width reduction by more than 50% was successfully demonstrated at relatively low temperatures. Furthermore, it was verified that this process was applicable to the nanopatterns of different shapes and materials.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.100-104
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• 2018

Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to $500^{\circ}C$. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by plasma treatment reaches $2.2{\times}10^{12}cm^{-2}$ and maintains a value of $1.6{\times}10^{12}cm^{-2}$, even after annealing at $500^{\circ}C$, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.129-138
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• 2001

This study examined the effects of the annealing heat treatments on the mechanical properties of the Invar(Fe-36%Ni Alloy) materials. Invar materials were annealed at various temperatures range 900~120$0^{\circ}C$ in vacuum(10-4Torr) and hydrogen atmospheres. And annealing conditions were changed by cooling rate and holding time at 110$0^{\circ}C$. The grain size of rolled Invar materials was very fine but those of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere increased with increasing annealing temperature. The micro-vickers hardness values of annealed Invar materials were decreased about 15% that of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions. The tensile strength and yield strength of annealed Invar materials at 900~120$0^{\circ}C$ in vacuum and hydrogen atmosphere were decreased 10.0~14.4% and 34.6~39.1% those of the rolled Invar materials, respectively. The strength ratio(tensile strength/ yield strength) of annealed Invar materials was improved to 1.7~1.8 from the value of 1.2~1.3 of rolled Invar materials. The degree of spring back of annealed Invar materials was about 50% of the rolled Invar materials, regardless of the various of annealing temperatures, atmosphere(vacuum, hydrogen) and annealing conditions.

• Journal of Powder Materials
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• v.3 no.2
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• pp.91-96
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• 1996

The effect of vacuum annealing on the oxidation behavior of milled WC-15%Co powder mixture has been studied. A cobalt component in the milled powder mixture was oxidized preferentially above 175$^{\circ}C$ in air. The specimens showed a steady increase in weight at 175$^{\circ}C$ but did constant weight followed by rapid increase in specimen weight at the beginning above 20$0^{\circ}C$. Oxidation of the milled powder mixture was significantly suppressed by vacuum annealing at 30$0^{\circ}C$ for 10 h. Suppression of oxidation by vacuum annealing and different oxidation behaviors of the milled powder mixture between 175$^{\circ}C$ and 20$0^{\circ}C$, were attributed to removal of strain energy stored in the cobalt powder during vacuum annealing or oxidation treatment above 20$0^{\circ}C$. The role of stored strain energy on oxidation of milled WC-15%Co powder mixture was proved by X-ray diffraction method and differential thermal analysis.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.25-32
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• 2006

The alumina dispersion-strengthened (DS) C15715 Cu alloy fabricated by a powder metallurgy route was annealed at temperatures ranging from $800^{\circ}C\;to\;1000^{\circ}C$ in the air and in vacuum. The effect of the annealing on microstructural stability and room-temperature mechanical properties of the alloy was investigated. The microstructure of the cold rolled OS alloy remained stable until the annealing at $900^{\circ}C$ in the air and in vacuum. No recrystallization of original grains occurred, but the dislocation density decreased and newly formed subgrains were observed. The alloy annealed at $1000^{\circ}C$ in the air experienced recrystallization and grain growth took place, however annealing in vacuum at $1000^{\circ}C$ did not cause the microstructural change. The mechanical property of the alloy was changed slightly with the annealing if the microstructure remained stable. However, the strength of the specimen that was recrystallized decreased drastically.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.63-63
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• 1999

The stability of hydrogenated amorphous silicon (a-Si:H) films under the light soaking are very important since the applications of a-Si:H films are solar cells, color sensors, photosensors, and thin film transistors(TFTs). We found the changes of the electric conductivity and the conductivity activation energy (Ea) of a-Si:H films by argon radical annealing. The deposition rate of a-Si:H films depends on the argon radical annealing time. The optical band gap and the hydrogen contents in the a-Si:H films are changes along the argon radical annealing time. We will discuss the microscopic processes of argon radical annealing in a-si:H films.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.1-8
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• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.10-11
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• 2006

In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.