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http://dx.doi.org/10.5757/ASCT.2018.27.5.100

Behavior of Plasma-doped Graphene upon High Temperature Vacuum Annealing  

Lee, Byeong-Joo (Department of Advanced Materials Science and Engineering, Kangwon National University)
Jo, Sung-Il (Department of Advanced Materials Science and Engineering, Kangwon National University)
Jeong, Goo-Hwan (Department of Advanced Materials Science and Engineering, Kangwon National University)
Publication Information
Applied Science and Convergence Technology / v.27, no.5, 2018 , pp. 100-104 More about this Journal
Abstract
Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to $500^{\circ}C$. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by plasma treatment reaches $2.2{\times}10^{12}cm^{-2}$ and maintains a value of $1.6{\times}10^{12}cm^{-2}$, even after annealing at $500^{\circ}C$, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.
Keywords
Graphene; Plasma doping; Vacuum annealing; Structure healing; Doping stability;
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