• Title/Summary/Keyword: Vacuum measurement standards

Search Result 46, Processing Time 0.022 seconds

Study on Developing Assessment Guideline for Safety and Performance of Electric Cupping Apparatus (전동식 부항기에 대한 안전성 및 성능평가 가이드라인 개발연구)

  • Yi, Seung-Ho;Kim, Eun-Jung;Shin, Kyung-Hoon;Nam, Dong-Woo;Kang, Jung-Won;Lee, Seung-Deok;Lee, Hye-Jung;Lee, Jae-Dong;Kim, Kap-Sung
    • Journal of Acupuncture Research
    • /
    • v.26 no.6
    • /
    • pp.101-110
    • /
    • 2009
  • Objectives : We developed and proposed a guideline for safety and performance assessment of electric cupping apparatus(Class 2 medical device). Methods : We drafted the guideline for safety and performance assessment of electric cupping apparatus by referring the existing standards and guideline, based on online questionnaire for Korean medical doctors and measurement data from commercially available products. Physical dimension of cups and inner vacuum pressure were acquired for the measurement in order to achieve the purposes. Results : This guideline only can be applied to electric cupping apparatus for enhancing blood circulation by employing negative pressure generated by electricity. Seven items of appearance and label, operation test of pump, variation test of input electricity, vacuum level test, vacuum sustain test, cup-size dependent test, noise level test are suggested for evaluation subjects and methods required for electric cupping devices. Requirements for the design and development of electric cupping devices are suggested: vacuum level indicator, vacuum generation rate, pressure control, valve detachment stability, cup comparability, safety measure, surge protection, user friendliness, instruction for use (IFU). Conclusions : We proposed a guideline for safety and performance assessment of electric cupping apparatus to improve the quality of relating products and aid the commercialization of them, by aiming higher industrial competitiveness of the medical device sectors in Korea. Discussion with related institutes such as industry, academy and government is further required. Public hearings also need to be held prior to the establishment of a final guideline and standard.

  • PDF

Plasma Corrosion and Breakdown Voltage Behavior of Ce Ion Added Sulfuric Acid Anodizing According to Electrolyte Temperature (Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성)

  • So, Jongho;Yun, Ju-Young;Shin, Jae-Soo
    • Journal of the Semiconductor & Display Technology
    • /
    • v.20 no.1
    • /
    • pp.37-41
    • /
    • 2021
  • We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.

Determination of Layer Thickness of A/B Type Multilayer Films in SIMS Depth Profiling Analysis

  • Hwang, Hyun-Hye;Jang, Jong-Shik;Kang, Hee-Jae;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.231-231
    • /
    • 2012
  • Correct determination of the interface locations is critical for the calibration of the depth scale and measurement of layer thickness in SIMS depth profiling analysis of multilayer films. However, the interface locations are difficult to determine due to the unwanted distortion from the real ones by the several effects due to sputtering with energetic ions. In this study, the layer thicknesses of Si/Ge and Si/Ti multilayer films were measured by SIMS depth profiling analysis using the oxygen and cesium primary ion beam. The interface locations in the multilayer films could be determined by two methods. The interfaces can be determined by the 50 at% definition where the atomic fractions of the constituent layer elements drop or rise to 50 at% at the interfaces. In this method, the raw depth profiles were converted to compositional depth profiles through the two-step conversion process using the alloy reference relative sensitivity factors (AR-RSF) determined by the alloy reference films with well-known compositions determined by Rutherford backscattering spectroscopy (RBS). The interface locations of the Si/Ge and Si/Ti multilayer films were also determined from the intensities of the interfacial composited ions (SiGe+, SiTi+). The determination of the interface locations from the composited ions was found to be difficult to apply due to the small intensity and the unclear variation at the interfaces.

  • PDF

Electronic Structure of Organic/organic Interface Depending on Heteroepitaxial Growth Using Templating Layer

  • Lim, Hee Seon;Kim, Sehun;Kim, Jeong Won
    • Applied Science and Convergence Technology
    • /
    • v.23 no.6
    • /
    • pp.351-356
    • /
    • 2014
  • The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

Development of particle focusing device to monitor various low pressure processes (다양한 조건의 저압 공정 모니터링을 위한 입자 집속 장치 개발)

  • Kim, Myungjoon;Kim, Dongbin;Kang, Sang-Woo;Kim, Taesung
    • Particle and aerosol research
    • /
    • v.13 no.2
    • /
    • pp.53-63
    • /
    • 2017
  • As semiconductor process was highly integrated, particle contamination became a major issue. Because particle contamination is related with process yields directly, particles with a diameter larger than half pitch of gate should be controlled. PBMS (Particle beam mass spectrometry) is one of powerful nano particle measurement device. It can measure 5~500 nm particles at ~ 100 mtorr condition in real time by in-situ method. However its usage is restricted to research filed only, due to its big device volume and high price. Therefore aperture changeable aerodynamic lenses (ACALs) which can control particle focusing characteristics by changing its aperture diameter was proposed in this study. Unlike conventional aerodynamic lenses which changes particle focusing efficiency when operating condition is changed, ACALs can maintain particle focusing efficiency. Therefore, it can be used for a multi-monitoring system that connects one PBMS and several process chambers, which greatly improves the commercialization possibility of the PBMS. ACALs was designed based on Stokes number and evaluated by numerical method. Numerical analysis results showed aperture diameter changeable aerodynamic lenses can focus 5 to 100 nm standard particles at 0.1 to 10 torr upstream pressure.

Influence of Plasma Corrosion Resistance of Y2O3 Coated Parts by Cleaning Process (세정공정에 따른 Y2O3 코팅부품의 내플라즈마성 영향)

  • Kim, Minjoong;Shin, Jae-Soo;Yun, Ju-Young
    • Journal of the Korean institute of surface engineering
    • /
    • v.54 no.6
    • /
    • pp.365-370
    • /
    • 2021
  • In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y2O3 coated parts used for semiconductor and display plasma process equipment. CF4, O2, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y2O3 was exposed to CF4 plasma, the surface changed from Y2O3 to YF3 and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF3 layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.