• 전자공학회논문지SC
• /
• 제45권2호
• /
• pp.37-44
• /
• 2008

본 논문에서는 고속 링 발진기를 이용한 WLAN용 5.8 GHz PLL을 제안하였다. 제안한 PLL에 사용된 링 발진기는 부 스큐 지연방식을 이용하여 차동 구조로 설계되었다. 따라서 Power-Supply-Injected Noise에 둔감하며, 1/f Noise를 감소시키기 위하여 Tail Current Source를 사용하지 않았다. 제안한 링 발진기는 $0{\sim}1.8V$의 컨트롤 전압에 걸쳐 $5.13{\sim}7.04GHz$의 발진주파수를 보였다. 본 논문에서 제안한 PLL 회로는 0.18 um 1.8 V TSMC CMOS 라이브러리를 기본으로 하여 설계하였고 시뮬레이션을 통하여 성능을 검증하였다. 동작 주파수는 5.8 GHz이며, Locking Time은 2.5 us, 5.8 GHz에서의 소비 전력은 59.9mW로 측정되었다.

• 센서학회지
• /
• 제11권6호
• /
• pp.365-370
• /
• 2002

교류 220V에 의해 동작하는 점핑링 장치를 제작하고 광센서를 사용하여 링의 높이정보를 받아 부상한 링의 높이를 실시간으로 검출하고 교육적 효과를 높이기 위해 디지털 높이정보를 아날로그 변환하여 쉽게 높이를 알 수 있도록 하였다. 교육용 시스템을 직접 제작하여 시스템을 모형화하여 제어신호를 구하고 제어 프로그램에 의해 원하는 높이로 링을 부상할 수 있도록 하였다. 본 논문은 광센서를 사용하여 링의 위치를 실시간으로 검출하였고 광센서의 배열과 높이 정보를 발광다이오드 5개로 디지털 값을 보여주었고, D/A변환하여 교육용 시스템을 제작하여 A/D 변환기를 통해 데이터 신호처리 하였다. 교육용 시스템을 모형 화하여 원하는 링의 높이를 실시간으로 제어 할 수 있게 하였다.

• Kyungpook Mathematical Journal
• /
• 제56권4호
• /
• pp.1103-1113
• /
• 2016

In this paper, we study a directed simple graph ${\Gamma}_S(N)$ for a near-ring N, where the set $V^*(N)$ of vertices is the set of all left N-subsets of N with nonzero left annihilators and for any two distinct vertices $I,J{\in}V^*(N)$, I is adjacent to J if and only if IJ = 0. Here, we deal with the diameter, girth and coloring of the graph ${\Gamma}_S(N)$. Moreover, we prove a sufficient condition for occurrence of a regular element of the near-ring N in the left annihilator of some vertex in the strong zero-divisor graph ${\Gamma}_S(N)$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
• /
• pp.479-481
• /
• 2006

This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 ITC-CSCC -2
• /
• pp.1034-1037
• /
• 2002

A switched-capacitor(SC) type DC-DC converter having capability of integrated circuit fabrication have been marked for the application of mobile equipments. Especially, a ring type SC power supply is featured by the flexible and dynamic voltage conversion ratio change. In this paper, an improvement of the gate driving techniques is proposed for high power efficiency and less area occupation on the chip. Furthermore, its power-saving operation in the stand-by state is proposed. The three-capacitors ring type power supply is really designed and discussed. As results, the simulation results shows the high efficiency of 92.1%, and the higher output put voltage of 10.5 V compared with conventional one of 8.6 V.

• Bulletin of the Korean Chemical Society
• /
• 제22권12호
• /
• pp.1316-1322
• /
• 2001

Transition metal complexes of novel mono- and di-ferrocene-substituted porphyrins have been synthesized and characterized by structural and electrochemical methods. The X-ray structures of Mn(FPTTP)Cl and Mn(DFTTP)Cl showed the distorted square pyramidal coordination geometry with syn configuration of chloride and ferrocenyl substituents. The electrochemistry of ferrocene-substituted porphyrins and their metal complexes has been determined to elucidate the ${\pi}-conjugation$ effect of the porphyrin ring. The ferrocenyl group of H2FPTTP underwent a reversible one-electron transfer process at 0.30 V, indicating the good electron donating effect of the phorphyrin ring to the ferrocene substituent. The redox potential of the ferrocenyl subunit and porphyrin ring was affected by the central metal ions of the metalloporphyrins, that is, Zn(II) and Ni(II) made the oxidation of ferrocene much easier and Mn(III) made it harder. The ferrocene subunits of H2DFTTP interacted electrochemically with each other with peak splitting of 0.21 V. The strength of the electrochemical interactions between the two ferrocenyl substituents can be controlled by central metal ions of metalloporphyrins.

• 대한수학회지
• /
• 제51권3호
• /
• pp.509-525
• /
• 2014

Let R be a commutative ring with identity. An R-module M is said to be w-projective if $Ext\frac{1}{R}$(M,N) is GV-torsion for any torsion-free w-module N. In this paper, we define a ring R to be w-semi-hereditary if every finite type ideal of R is w-projective. To characterize w-semi-hereditary rings, we introduce the concept of w-injective modules and study some basic properties of w-injective modules. Using these concepts, we show that R is w-semi-hereditary if and only if the total quotient ring T(R) of R is a von Neumann regular ring and $R_m$ is a valuation domain for any maximal w-ideal m of R. It is also shown that a connected ring R is w-semi-hereditary if and only if R is a Pr$\ddot{u}$fer v-multiplication domain.

• Kyungpook Mathematical Journal
• /
• 제55권3호
• /
• pp.507-514
• /
• 2015

Let D be an integral domain, t be the so-called t-operation on D, and S be a (not necessarily saturated) multiplicative subset of D. In this paper, we study the Nagata ring of S-Noetherian domains and locally S-Noetherian domains. We also investigate the t-Nagata ring of t-locally S-Noetherian domains. In fact, we show that if S is an anti-archimedean subset of D, then D is an S-Noetherian domain (respectively, locally S-Noetherian domain) if and only if the Nagata ring $D[X]_N$ is an S-Noetherian domain (respectively, locally S-Noetherian domain). We also prove that if S is an anti-archimedean subset of D, then D is a t-locally S-Noetherian domain if and only if the polynomial ring D[X] is a t-locally S-Noetherian domain, if and only if the t-Nagata ring $D[X]_{N_v}$ is a t-locally S-Noetherian domain.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.830-833
• /
• 2004

Voltage step-down characteristics of Ring/Dot type piezoelectric transformer were examined with increasing input voltage from $10\;V_{pp}$ to $140V_{pp}$. Then the output load resistance was fixed to $125\;\Omega$. The voltage gain showed constant value till the input voltage of $70\;V_{pp}$. And then it linearly decreased till the input voltage of $140V_{pp}$. The output voltage of fabricated piezoelectric transformer increased with increasing input voltage. And driving frequencies when the output voltage was maximum value were changed according to input voltage. Frequency shifts and temperature rise of fabricated sample showed 2 kHz, $13^{\circ}C$, respectively when input voltage was changed from $10\;V_{pp}$ to $140V_{pp}$. Because of the temperature rise of fabricated piezoelectric transformer, the step-down characteristics of it was deteriorated above the input voltage of $70\;V_{pp}$.

• 한국전자파학회논문지
• /
• 제22권5호
• /
• pp.522-527
• /
• 2011

본 논문에서는 54 GHz 대역의 위상 고정 루프에서 사용되기 위한 Ring 발진기를 이용한 3 분주 주입 동기 주파수 분주기(Injection-Locked Frequency Divider: ILFD)를 0.13-${\mu}M$ Si RFCMOS 공정을 이용하여 설계, 제작한 결과를 보인다. 1.8 V의 공급 전압에 대해서 buffer단을 포함하여 70 mW의 전력을 소비하며, 입력 신호가 없을 때 0~1.8 V의 varactor 조정 전압 범위에 대하여 18.92~19.31 GHz에서 자유 발진(free-running oscillation)을 하였다. 0 dBm의 입력 전력에 대해서 1.02 GHz(54.82~55.84 GHz)의 동기 범위(locking range)를 가지며 varactor 조정(0~1.8 V)을 포함한 동작 범위(operating range)는 약 2.4 GHz(54.82~57.17 GHz)를 보였다. 제작된 회로의 크기는 측정 pad를 포함하여 0.42 mm${\times}$0.6 mm이며, pad를 제외한 실제 동작 영역의 크기는 0.099 mm${\times}$0.056 mm이다.