• 제목/요약/키워드: V-orthogonal

검색결과 113건 처리시간 0.025초

준 직교 코드 기반의 고속 전력선 통신에 관한 연구 (A study of PLC based on Quasi-Orthogonal codes)

  • 차재상;신명철;이승연;허남영;서희석;최상열;최인혁;이복구
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2004년도 하계학술대회 논문집 A
    • /
    • pp.319-321
    • /
    • 2004
  • 전력선 통신은 최근 정보통신 기술의 급속한 발전과 더불어 많은 데이터 전송율을 요구하게 되었다. 한편, 기존의 사용하던 직교코드는 데이터 전송의 신뢰성은 높으나 준 직교코드를 사용했을 때보다 데이터 전송율은 낮다. 따라서 높은 데이터 전송율을 충족하기 위해 준 직교코드를 적용함으로서, 고속의 전력선통신을 가능하게 하고, 채널부호화를 통해 데이터의 신뢰성을 높인다. 또한, 본 논문에서는 전력선통신에 이용가능한 직교코드와 준 직교코드의 상관특성 및 비트오율특성을 비교해 봄으로서, 줄 직교코드의 유효성을 확인하였다.

  • PDF

A CMOS Frequency Synthesizer Block for MB-OFDM UWB Systems

  • Kim, Chang-Wan;Choi, Sang-Sung;Lee, Sang-Gug
    • ETRI Journal
    • /
    • 제29권4호
    • /
    • pp.437-444
    • /
    • 2007
  • A CMOS frequency synthesizer block for multi-band orthogonal frequency division multiplexing ultra-wideband systems is proposed. The proposed frequency synthesizer adopts a double-conversion architecture for simplicity and to mitigate spur suppression requirements for out-of-band interferers in 2.4 and 5 GHz bands. Moreover, the frequency synthesizer can consist of the fewest nonlinear components, such as divide-by-Ns and a mixer with the proposed frequency plan, leading to the generation of less spurs. To evaluate the feasibility of the proposed idea, the frequency synthesizer block is implemented in 0.18-${\mu}m$ CMOS technology. The measured sideband suppression ratio is about 32 dBc, and the phase noise is -105 dBc/Hz at an offset of 1 MHz. The fabricated chip consumes 17.6 mA from a 1.8 V supply, and the die-area including pads is $0.9{\times}1.1\;mm^2$.

  • PDF

A Versatile Universal Capacitor-Grounded Voltage-Mode Filter Using DVCCs

  • Chen, Hua-Pin;Shen, Sung-Shiou
    • ETRI Journal
    • /
    • 제29권4호
    • /
    • pp.470-476
    • /
    • 2007
  • In this paper, a versatile three-input five-output universal capacitor-grounded voltage-mode filter is proposed. The circuit employs two differential voltage current conveyors as active elements together with two grounded capacitors and four resistors as passive elements. The proposed configuration can be used as either a single-input five-output or three-input two-output. Unlike the previously reported works, it can simultaneously realize five different generic filtering signals: lowpass, bandpass, highpass, bandreject, and allpass. It still maintains the following advantages: (i) the employment of all grounded capacitors, (ii) no need to employ inverting-type input signals, (iii) no need to impose component choice, (iv) orthogonal control of the resonance angular frequency ${\omega}_o$ and the quality factor Q, and (v) low active and passive sensitivity performances.

  • PDF

OFDM 기반의 UWB 통신시스템 성능 분석 (Performance Analysis of UWB Communication System Based on OFDM)

  • 유승수;김선용
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2003년도 하계종합학술대회 논문집 I
    • /
    • pp.23-26
    • /
    • 2003
  • 본 논문은 UWB (Ultra Wide Band) 통신시스템에 대한 이해와 더불어 OFDM (Orthogonal Frequency Division Multiplexing/Modulation) 기반의 UWB 통신 시스템에 대해 가정된 매개변수를 이용하여 시스템을 설계하고, 설계된 시스템에 대한 모의실험을 통한 분석에 대해 기술한다. 본 논문에서는 IEEE 802.15.TG3a 표준화 위원회에서 UWB의 표준화를 위해 제시한 수정된 S-V (Saleh-Velenzuela) 모형을 기반으로 한 채널모형에 대한 설명과 기존에 연구된 OFDM 전송 기술에 대한 개요 및 장단점을 소개하고 이를 바탕으로 UWB 통신 시스템에 OFDM 전송 기술을 적용하기위한 적절한 매개변수를 도출한다. 그리고 도출된 매개변수를 바탕으로 OFDM 전송 기술의 모의실험을 수행하고, 모의 실험 결과를 통해 OFDM을 적용한 UWB 통신 시스템의 성능을 분석하였다.

  • PDF

Remote PECVD (RPECVD) SiO$_2$ 막의 형성 및 특성 (Foramtion and Characterization of SiO$_2$ films made by Remote Plasma Enhanced Chemical vapour Deposition)

  • 유병곤;구진근;임창완;김광호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
    • /
    • pp.171-174
    • /
    • 1994
  • The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

아몰퍼스 자왜 와이어의 센싱기능에 관한 연구 (A Study on the Sensing Function of Amorphous Magnetostrictive Wire)

  • 조남희;신용진;서강수;임재근;문현욱
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
    • /
    • pp.89-92
    • /
    • 1996
  • In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

  • PDF

Application of Taguchi Methodology for Optimization of Parameters of CVD Influencing Formation of a Desired Optical Band Gap of Carbon Film

  • Mishra, D.K.;Bejoy, N.;Sharon, Maheshwar.
    • Carbon letters
    • /
    • 제6권2호
    • /
    • pp.96-100
    • /
    • 2005
  • Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

  • PDF

Review of the Current Status of the U-238, NP-237 and Th-232 Fission Cross Sections

  • Bak, H.I.;Lorenz, A.
    • Nuclear Engineering and Technology
    • /
    • 제3권2호
    • /
    • pp.77-97
    • /
    • 1971
  • 1970년 말까지 보고된 U-238, Np-237 및 Th-232의 고속중성자에 대한 핵분열단 면적 및 그 실험오차를 조사 분석하여 최소자숭직교다항식적합법에 의하여 단면적의 최적치와 95%신뢰도에 대응하는 오차범위를 계산하고 이 결과를 사용하여 분열스펙트럼에 대한 평균단면적치를 추정하였다.

  • PDF

A Low-Complexity 128-Point Mixed-Radix FFT Processor for MB-OFDM UWB Systems

  • Cho, Sang-In;Kang, Kyu-Min
    • ETRI Journal
    • /
    • 제32권1호
    • /
    • pp.1-10
    • /
    • 2010
  • In this paper, we present a fast Fourier transform (FFT) processor with four parallel data paths for multiband orthogonal frequency-division multiplexing ultra-wideband systems. The proposed 128-point FFT processor employs both a modified radix-$2^4$ algorithm and a radix-$2^3$ algorithm to significantly reduce the numbers of complex constant multipliers and complex booth multipliers. It also employs substructure-sharing multiplication units instead of constant multipliers to efficiently conduct multiplication operations with only addition and shift operations. The proposed FFT processor is implemented and tested using 0.18 ${\mu}m$ CMOS technology with a supply voltage of 1.8 V. The hardware- efficient 128-point FFT processor with four data streams can support a data processing rate of up to 1 Gsample/s while consuming 112 mW. The implementation results show that the proposed 128-point mixed-radix FFT architecture significantly reduces the hardware cost and power consumption in comparison to existing 128-point FFT architectures.

Power allocation-Assisted secrecy analysis for NOMA enabled cooperative network under multiple eavesdroppers

  • Nayak, V. Narasimha;Gurrala, Kiran Kumar
    • ETRI Journal
    • /
    • 제43권4호
    • /
    • pp.758-768
    • /
    • 2021
  • In this work, the secrecy of a typical wireless cooperative dual-hop non-orthogonal multiple access (NOMA)-enabled decode-and-forward (DF) relay network is investigated with the impact of collaborative and non-collaborative eavesdropping. The system model consists of a source that broadcasts the multiplexed signal to two NOMA users via a DF relay, and information security against the eavesdropper nodes is provided by a helpful jammer. The performance metric is secrecy rate and ergodic secrecy capacity is approximated analytically. In addition, a differential evolution algorithm-based power allocation scheme is proposed to find the optimal power allocation factors for relay, jammer, and NOMA users by employing different jamming schemes. Furthermore, the secrecy rate analysis is validated at the NOMA users by adopting different jamming schemes such as without jamming (WJ) or conventional relaying, jamming (J), and with control jamming (CJ). Simulation results demonstrate the superiority of CJ over the J and WJ schemes. Finally, the proposed power allocation outperforms the fixed power allocation under all conditions considered in this work.