• 제목/요약/키워드: V-Zn oxide materials

검색결과 151건 처리시간 0.03초

Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition

  • Lee, Deuk-Hee;Chun, Yoon-Soo;Lee, Sang-Yeol;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.200-203
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    • 2011
  • In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

Cu2ZnSn(S,Se)4 (CZTSSe) 박막 태양전지 적용을 위한 마그네트론 스퍼터링으로 증착된 AZO/Ag/AZO 투명전극의 특성 (Characteristics of an AZO/Ag/AZO Transparent Conducting Electrode Fabricated by Magnetron Sputtering for Application in Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells)

  • 이동민;장준성;김지훈;이인재;이병훈;조은애;김진혁
    • 한국재료학회지
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    • 제30권6호
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    • pp.285-291
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    • 2020
  • Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu2ZnSn(S,Se)4 (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.5810-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

Effect of Subthreshold Slope on the Voltage Gain of Enhancement Mode Thin Film Transistors Fabricated Using Amorphous SiInZnO

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권5호
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    • pp.250-252
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    • 2017
  • High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

Ga-doped ZnO (GZO) 박막의 anti-reflective 특성

  • 박지현;이민정;이태일;명재민
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.111.2-111.2
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    • 2012
  • 정보 기술 시대에 맞춰 광전소자의 연구가 활발해지면서 투명전극으로 사용될 수 있는 Transparent Conductive Oxide (TCO) 재료에 대한 관심이 높아지고 있다. 하지만 TCO의 대표적인 물질인 Indium Tin Oxide (ITO)의 경우 In의 가격 상승으로 인해 최근에는 낮은 전도도와 높은 투과도를 가질 수 있는 대체 물질에 대한 연구가 활발히 진행되고 있다. 그 중에서 3.2 eV 의 높은 밴드갭을 갖는 ZnO 는 가시광선 영역에서 높은 투과율을 나타낼 뿐만 아니라 Al, Ga을 도핑함으로써 낮은 전도도를 가질 수 있다. 이러한 TCO 재료는 surface texturing을 통하여 optical region 에서 반사를 억제 시킴으로서 빛을 모으는 역할을 하여 태양전지의 효율을 향상 시킬 수 있기 때문에 PV (Photovoltaics) Cell의 anti-reflective coating에 적용 할 수 있다. 본 연구에서는 pulsed DC magnetron sputtering을 이용하여 Ga-doped ZnO (GZO) 박막을 증착하였고, HCl 0.5 wt %로 wet etching을 통하여 surface texturing을 진행하였다. 결정성은 X-ray diffractometer (XRD)로 분석하였으며, 표면 형상은 Scanning Electron Microscope (SEM)을 통해 확인하였다. Van der Pauw 방법을 통해 resistivity, carrier concentration, hall mobility 등의 전기적 특성을 분석하였고 UV-Vis spectrophotometer 를 통해 투과도 및 반사도를 측정하였다.

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Varistor Properties and Aging Behavior of V/Mn/Co/ La/Dy Co-doped Zinc Oxide Ceramics Modified with Various Additives

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.284-289
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    • 2014
  • The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

Zinc Oxide Nanoparticles Exhibit Both Cyclooxygenase- and Lipoxygenase-Mediated Apoptosis in Human Bone Marrow-Derived Mesenchymal Stem Cells

  • Kim, Dong-Yung;Kim, Jun-Hyung;Lee, Jae-Chul;Won, Moo-Ho;Yang, Se-Ran;Kim, Hyoung-Chun;Wie, Myung-Bok
    • Toxicological Research
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    • 제35권1호
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    • pp.83-91
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    • 2019
  • Nanoparticles (NPs) have been recognized as both useful tools and potentially toxic materials in various industrial and medicinal fields. Previously, we found that zinc oxide (ZnO) NPs that are neurotoxic to human dopaminergic neuroblastoma SH-SY5Y cells are mediated by lipoxygenase (LOX), not cyclooxygenase-2 (COX-2). Here, we examined whether human bone marrow-derived mesenchymal stem cells (MSCs), which are different from neuroblastoma cells, might exhibit COX-2- and/or LOX-dependent cytotoxicity of ZnO NPs. Additionally, changes in annexin V expression, caspase-3/7 activity, and mitochondrial membrane potential (MMP) induced by ZnO NPs and ZnO were compared at 12 hr and 24 hr after exposure using flow cytometry. Cytotoxicity was measured based on lactate dehydrogenase activity and confirmed by trypan blue staining. Rescue studies were executed using zinc or iron chelators. ZnO NPs and ZnO showed similar dose-dependent and significant cytotoxic effects at concentrations ${\geq}15{\mu}g/mL$, in accordance with annexin V expression, caspase-3/7 activity, and MMP results. Human MSCs exhibited both COX-2 and LOX-mediated cytotoxicity after exposure to ZnO NPs, which was different from human neuroblastoma cells. Zinc and iron chelators significantly attenuated ZnO NPs-induced toxicity. Conclusively, these results suggest that ZnO NPs exhibit both COX-2- and LOX-mediated apoptosis by the participation of mitochondrial dysfunction in human MSC cultures.

HgCdTe MIS의 이중 절연막 특성에 관한 연구 (A study on the characteristics of double insulating layer)

  • 정진원
    • E2M - 전기 전자와 첨단 소재
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    • 제9권5호
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    • pp.463-469
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    • 1996
  • The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

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Antimicrobial efficacy and safety analysis of zinc oxide nanoparticles against water borne pathogens

  • Supraja, Nookala;Avinash, B.;Prasad, T.N.V.K.V.
    • Advances in nano research
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    • 제5권2호
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    • pp.127-140
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    • 2017
  • Metal nanoparticles have been intensively studied within the past decade. Nano-sized materials have been an important subject in basic and applied sciences. Zinc oxide nanoparticles have received considerable attention due to their unique antibacterial, antifungal, and UV filtering properties, high catalytic and photochemical activity. In this study, microbiological aspects of scale formation in PVC pipelines bacteria and fungi were isolated. In the emerging issue of increased multi-resistant properties in water borne pathogens, zinc oxide (ZnO) nanoparticle are being used increasingly as antimicrobial agents. Thus, the minimum bactericidal concentration (MBC) and minimum fungal concentration of ZnO nanoparticles towards pathogens microbe were examined in this study. The results obtained suggested that ZnO nanoparticles exhibit a good anti fungal activity than bactericidal effect towards all pathogens tested in in-vitro disc diffusion method (170 ppm, 100 ppm and 30 ppm). ZnO nanoparticles can be a potential antimicrobial agent due to its low cost of production and high effectiveness in antimicrobial properties, which may find wide applications in various industries to address safety issues. Stable ZnO nanoparticles were prepared and their shape and size distribution characterized by Dynamic light scattering (35.7 nm) and transmission electron microscopic TEM study for morphology identification (20 nm), UV-visible spectroscopy (230 nm), X-ray diffraction (FWHM of more intense peak corresponding to 101 planes located at $36.33^{\circ}$ using Scherrer's formula), FT-IR (Amines, Alcohols, Carbonyl and Nitrate ions), Zeta potential (-28.8). The antimicrobial activity of ZnO nanoparticles was investigated against Bacteria and Fungi present in drinking water PVC pipelines biofilm. In these tests, Muller Hinton agar plates were used and ZnO nanoparticles of various concentrations were supplemented in solid medium.

갈륨이 첨가된 산화아연막의 코팅에 따른 미세팁 구조 탄소나노튜브의 전계방출 특성 및 장시간 안정성 (Field-emission Properties and Long-term Stability of Tip-type Carbon Nanotubes Coated with Gallium-incorporated Zinc Oxide Films)

  • 김종필;노영록;조경철;이상렬;박진석
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.65-69
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    • 2009
  • Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

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Comparison of Luminescence Properties of Electrochemical Luminescence Cells for Various Electrode Materials and Structures

  • Pooyodying, Pattarapon;Ok, Jung-Woo;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • 제12권4호
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    • pp.1605-1610
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    • 2017
  • The electrochemical luminescence (ECL) device was investigated, which has similar structure to the dye-sensitized solar cell. The structure of the ECL cell in this experiment reliably induces a large amount of the oxidation around electrodes. The band gap of the ECL electrode is of 3.0 - 3.2 eV. Titanium dioxide ($TiO_2$) nanoparticle has following properties: a band gap of 3.4 eV, a low-priced material, and 002 preferred orientation (Z-axis). Zinc Oxide (ZnO) nanorod is easy to grow in a vertical direction. In this paper, in order to determine material suitable for the ECL device, the properties of various materials for electrodes of ECL devices such as ZnO nanorod (ZnO-NR) and $TiO_2$ nanoparticle ($TiO_2-NP$) were compared. The threshold voltage of the light emission of the ZnO-NR was 2.0 V which is lower than 2.5 V of $TiO_2-NP$. In the other hand, the luminance of $TiO_2-NP$ was $44.66cd/m^2$ and was higher than that of $34cd/m^2$ of ZnO-NR at the same applied voltage of 4 V. Based on the experimental results, we could conclude that $TiO_2-NP$ is a more suitable electrode material in ECL device than the ZnO-NR.