References
- M. Eritt, C. May, K. Leo, M. Toerker and C. Radehaus, Thin Solid Films, 518, 3042 (2010). https://doi.org/10.1016/j.tsf.2009.09.188
- A. Mirzaei and G. Neri, Sens. Actuators, B, 237, 749 (2016). https://doi.org/10.1016/j.snb.2016.06.114
- J. S. Jang, J. Kim, U. Ghorpade, H. H. Shin, M. G. Gang, S. D. Park, H.-J. Kim, D. S. Lee and J. H. Kim, J. Alloys Compd., 793, 499 (2019). https://doi.org/10.1016/j.jallcom.2019.04.042
- K. C. Heo, Y. Sohn and J. S. Gwag, Ceram. Int., 41, 617 (2015). https://doi.org/10.1016/j.ceramint.2014.08.111
- J. Yun, Adv. Funct. Mater., 27, 1606641 (2017). https://doi.org/10.1002/adfm.201606641
- A. Khalid, J. Display Technol., 7, 593 (2011). https://doi.org/10.1109/JDT.2011.2151830
- Minami. T, Semicond. Sci. Technol., 20, S35-S44 (2005). https://doi.org/10.1088/0268-1242/20/4/004
- X. Huang, Z. Zeng, Z. Fan, J. Liu and H. Zhang, Adv. Mater., 24, 5979 (2012). https://doi.org/10.1002/adma.201201587
- S. De, T. M. Higgins, P. E. Lyons, E. M. Doherty, P. N. Nirmalraj, W. J. Blau, J. J. Boland and J. N. Coleman, ACS Nano, 3, 1767 (2009). https://doi.org/10.1021/nn900348c
- M. G. Kang, M. S. Kim, J. Kim and L. J. Guo, Adv. Mater., 20, 4408 (2008). https://doi.org/10.1002/adma.200800750
- N. E. Christensen, Phys. Status Solidi B, 54, 551 (1972). https://doi.org/10.1002/pssb.2220540219
- G. Zhao, W. Wang, T.-S. Bae, S.-G. Lee, C. Mun, S. Lee, H. Yu, G.-H. Lee, M. Song and J. Yun, Nat. Commun., 6, 8830 (2015). https://doi.org/10.1038/ncomms9830
- G. Zhang, D. Zhao, D. Gu, H. Kim, T. Ling, Y.-K. R. Wu and L. J. Guo, Adv. Mater., 26, 5696 (2014). https://doi.org/10.1002/adma.201306091
- D. C. Lim, J. H. Jeong, K. Hong, S. Nho, J.-Y. Lee, Q. V. Hoang, S. K. Lee, K. Pyo, D. Lee and S. Cho, Prog. Photovolt., 26, 188 (2018). https://doi.org/10.1002/pip.2965
- J. Meiss, M. K. Riede and K. Leo, J. Appl. Phys., 105, 063108 (2009). https://doi.org/10.1063/1.3100039
- V. J. Logeeswaran, N. P. Kobayashi, M. S. Islam, W. Wu, P. Chaturvedi, N. X. Fang, S. Y. Wang and R. S. Williams, Nano Lett., 9, 178 (2009). https://doi.org/10.1021/nl8027476
- N. Formica, D. S. Ghosh, A. Carrilero, T. L. Chen, R. E. Simpson and V. Pruneri, ACS Appl. Mater. Interfaces, 5, 3048 (2013). https://doi.org/10.1021/am303147w
- H. Liu, B. Wang, E. S. P. Leong, P. Yang, Y. Zong, G. Si, J. Teng and S. A. Maier, ACS Nano, 4, 3139 (2010). https://doi.org/10.1021/nn100466p
- G. Abadias, L. Simonot, J. J. Colin, A. Michel, S. Camelio and D. Babonneau, Appl. Phys. Lett., 107, 183105 (2015). https://doi.org/10.1063/1.4935034
- E. Jeong, S. Bae, J. B. Park, S. M. Yu, D. Kim, H.-S. Lee, J. Rha, Y.-R. Cho and J. Yun, RSC Adv., 9, 9160 (2019). https://doi.org/10.1039/c9ra00042a
- G. Zhao, M. Song, H.-S. Chung, S. M. Kim, S.-G. Lee, J.-S. Bae, T.-S. Bae, D. Kim, G.-H. Lee, S. Z. Han, H.-S. Lee, E.-A. Choi and J. Yun, ACS Appl. Mater. Interfaces, 9, 38695 (2017). https://doi.org/10.1021/acsami.7b10234
- S. Kang, R. Nandi, J. Sim, J. Jo, U. Chatterjee and C. Lee, RSC Adv., 7, 48113 (2017). https://doi.org/10.1039/C7RA07406A