• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1149-1154
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• 2014

To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.6
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• pp.424-429
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• 1987

It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.99-105
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• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.312-315
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• 2001

Water-Electrolyzed gas is a mixed gas of the constant volume ratio 2:1 Hydrogen and Oxygen gained from electrolyzed water, and it has better characteristics in the field of economy, efficiency of energy, and environmental intimacy than acetylene gas and LPG used for existing gas welding equipment. So studies of Water-Electrolyzed gas are activity in progress nowadays, and commercially used as a source of thermal energy for gas welding in the industry. The object of this paper is V-I feature of Hydrogen -Oxygen Gas Generator using DC source

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.434-435
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.135-139
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• 2022

The current-voltage modeling plays an important role in characterizing photovoltaic systems. A solar cell has a nonlinear characteristic with various parameters influenced by the external environments such as the irradiance and the temperature. In order to accurately predict current-voltage characteristics at low irradiance, the artificial neural networks are applied to effectively quantify nonlinear behaviors. In this paper, a multi-layer perceptron scheme that can make accurate predictions is employed to learn complex formulas for large amounts of continuous data. The simulated results of artificial neural networks model show the accuracy improvement by using MATLAB/Simulink.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.8
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• pp.1038-1045
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• 2000

An experimental study was carried out to delineate the flow characteristics in a closed countescurrent two-phase thermo syphon with concentric tubes. This is to be installed in the HANARO research reactor as a part of a Cold Neutron Source(CNS). In the present investigation, experiments ata room temperature with Freon-II3 as a moderator were performed. Results show that, based on the magnitude of pressure fluctuation, the flow regimes could be divided into 4 distinct ones in the ($V_f,\;Q_i$) plane, where $V_f$ represents the volume of the charged liquid and $Q_i$ the heat load: a stable flow regime, an oscillatory flow regime, a restablized flow regime and a dryout flow regime. For $V_f$>2.5l, the flow is stable at low $Q_i$. However, as $Q_i$ increases, the flow becomes oscillatory and finally restablizes As $V_f$ increases, the oscillation amplitude decreases, reaching to the restablized flow region at low $Q_i$, and the liquid level in the moderator cell remains high. In the oscillatory flow regimes, for a fixed VI; the oscillating period of time varies with $Q_i$, having a minimum value at a certain value of $Q_i$. The heat load, where the oscillating period of time is minimum, decreases as $V_f$ increases.

• Proceedings of the KIPE Conference
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• 1996.06a
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• pp.113-116
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• 1996

A model of a photovoltaic array written in PSPICE is presented in this paper. PSPICE is used to display array characteristics (I-V, P-V curve) as a function of parameters such as insulation and temperature. This paper is display in detail through a example of SM-50 model.

• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.371-375
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• 1992

Low cost, PC controlled electrical property measurement systems were constructed to study thin film characteristics such as ; I-V, C-V, C-t, and low current. In addition, a GPIB card and C language program for data control and analysis were made for this study.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.929-935
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• 2005

This paper contains a review of methods to analise static and dynamic properties of trap states in TFTs. The Gap Density of States is extracted from C-V and I-V characteristics. Switch on transients and small signal ac measurements are used in conjunction with simulation and an analytic model to extract traps dynamic parameters.