Journal of Electrical Engineering and information Science

The Korean Institute of Electrical Engineers (대한전기학회)
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An Efficient Current-Voltage Model for the AlGaAs/GaAs N-P Heterojunction Diode and its Application to HPTs

  • Published : 1997.08.01
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Abstract

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

Keywords

References

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