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http://dx.doi.org/10.6109/jkiice.2014.18.5.1149

Electrical Characteristics of Ambipolar Thin Film Transistor Depending on Gate Insulators  

Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.5, 2014 , pp. 1149-1154 More about this Journal
Abstract
To observe the tunneling phenomenon of oxide semiconductor transistor, The Indium-gallum-zinc-oxide thin film transistors deposited on SiOC as a gate insulator was prepared. The interface characteristics between a dielectric and channel were changed in according to the properties of SiOC dielectric materials. The transfer characteristics of a drain-source current ($I_{DS}$) and gate-source voltage ($V_{GS}$) showed the ambipolar or unipolar features according to the Schottky or Ohmic contacts. The ambipolar transfer characteristics was obtained at a transistor with Schottky contact in a range of ${\pm}1V$ bias voltage. However, the unipolar transfer characteristics was shown in a transistor with Ohmic contact by the electron trapping conduction. Moreover, it was improved the on/off switching in a ambipolar transistor by the tunneling phenomenon.
Keywords
Transistor; Ambipolar transfer characteristics; Trapping; Tunnelging;
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