• Title/Summary/Keyword: V 모델

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A Novel Parameter Extraction Method for the Solar Cell Model (새로운 태양전지 모델의 파라미터 추출법)

  • Kim, Wook;Kim, Sang-Hyun;Lee, Jong-Hak;Choi, Woo-Jin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.5
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    • pp.372-378
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    • 2009
  • With the increase in capacity of photovoltaic generation systems, studies are being actively conducted to improve system efficiency. In order to develop the high performance photovoltaic power system it is required to understand the physical characteristics of the solar cell. However, solar cell models have a non-linear form with many parameters entangled and conventional methods suggested to extract the parameters of the solar cell model require some kind of assumptions, which accompanies the calculation errors, thereby lowering the accuracy of the model. Therefore, in this paper a novel method is proposed to calculate the ideality factor and reverse saturation current of the solar cell from the I-V curve measured and announced by solar cell manufacturers, derive the ideal I-V curve, and then extract the series and shunt resistances value from the difference between the ideal and measured I-V curve. Also, validity of the proposed method is demonstrated by calculating the correlation between I-V curve based on modeling parameters and I-V curve actually measured through least squares method.

CNDO/2 MO Calculations for Catalytic Acidity of V-silicalite (실리카에 담지된 바나듐 촉매의 산성도에 대한 CNDO/2 분자궤도론적 계산)

  • Kim, Myung-Chul
    • Applied Chemistry for Engineering
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    • v.5 no.2
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    • pp.357-360
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    • 1994
  • The CNDO/2 calculations have been applied on cluster models for the representative active sites in V-silicalite to get Wiberg bond orders, LUMO energies and total energies. The B acidities of suggested models were investigated in terms of O-H bond orders. And the calculated LUMO energies showed the L acidities of the active sites. The structural stabilities of cluster models were also explained in terms of total energies.

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Analysis and Design of Flyback Converter Using PSIM Model (PSIM 모델을 이용한 플라이백 변환기 해석 및 설계)

  • Jang, Sung-Roc;Jeong, Jae-Jin;Kim, Dae-Keun;Choi, Jie-Yeon;Cho, Hye-Min;Lee, Hyoun-Young;Jeong, Kyeung-Soo
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1986-1987
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    • 2007
  • 본 논문에서는 PSIM 모델을 이용하여 오프라인 전류모드 제어 플라이백 변환기의 동특성 해석과 제어기 설계방법을 제시하였다. 제시된 PSIM 모델은 시간영역 모델을 이용하기 때문에 구조가 간단하여 이용하기가 쉬우며 정확성이 높다는 장점이 있다. 그리고 $110V{\sim}220V$ 오프라인 전원을 입력하여 10V/5A의 출력을 가지는 50W 플라이백 변환기를 설계 제작하여 실험을 통해 확인하였다.

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Metal Surface Defect Detection and Classification using EfficientNetV2 and YOLOv5 (EfficientNetV2 및 YOLOv5를 사용한 금속 표면 결함 검출 및 분류)

  • Alibek, Esanov;Kim, Kang-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.17 no.4
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    • pp.577-586
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    • 2022
  • Detection and classification of steel surface defects are critical for product quality control in the steel industry. However, due to its low accuracy and slow speed, the traditional approach cannot be effectively used in a production line. The current, widely used algorithm (based on deep learning) has an accuracy problem, and there are still rooms for development. This paper proposes a method of steel surface defect detection combining EfficientNetV2 for image classification and YOLOv5 as an object detector. Shorter training time and high accuracy are advantages of this model. Firstly, the image input into EfficientNetV2 model classifies defect classes and predicts probability of having defects. If the probability of having a defect is less than 0.25, the algorithm directly recognizes that the sample has no defects. Otherwise, the samples are further input into YOLOv5 to accomplish the defect detection process on the metal surface. Experiments show that proposed model has good performance on the NEU dataset with an accuracy of 98.3%. Simultaneously, the average training speed is shorter than other models.

Strategy for V2E Performance Assurance Technology Development Using the Kano Model (Kano 모델을 활용한 V2E 성능확보기술 개발 전략)

  • Jang, Jeong Ah;Son, Sungho;Lee, Jung Ki
    • Journal of Auto-vehicle Safety Association
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    • v.14 no.2
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    • pp.75-82
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    • 2022
  • Automated vehicles (AVs) are coming to our roadways. In practice, there are still several challenges that can impede the AV sensors are polluted on various road conditions. In this paper, we propose a strategy for V2E performance assurance technology using Kano model. We are developing the vehicle sensor cleaning system about the three types of commonly used sensors: camera, radar, and LiDAR. Surveys were carried out in 30 AV's experts on quality characteristics about V2E performance assurance technology. As a result, the Kano model developed to verify a major requirement of autonomous vehicle's sensor cleaning system. It is expected that the Kano model will be actively used to verify the importance of V2E development strategy.

Characteristics of Ferroelectric-Gate MFISFET Device Behaving to NDRO Configuration (NDRD 방식의 강유전체-게이트 MFSFET소자의 특성)

  • 이국표;강성준;윤영섭
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.1
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    • pp.1-10
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    • 2003
  • Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

Influence of crestal module design on marginal bone stress around dental implant (임플란트 경부 디자인이 변연골 응력에 미치는 영향)

  • Lim, Jung-Yoel;Cho, Jin-Hyun;Jo, Kwang-Heon
    • The Journal of Korean Academy of Prosthodontics
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    • v.48 no.3
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    • pp.224-231
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    • 2010
  • Purpose: This study was to investigate how the crestal module design could affect the level of marginal bone stress around dental implant. Materials and methods: A submerged implant of 4.1 mm in diameter and 10 mm in length was selected as baseline model (Dentis Co., Daegu,Korea).A total of 5 experimental implants of different crestal modules were designed (Type I model : with microthread at the cervical 3 mm, Type II model : the same thread pattern as Type I but with a trans-gingival module, Type III model: the same thread pattern as the control model but with a trans-gingival module, Type IV model: one piece system with concave transgingival part, Type V model: equipped with beveled platform). Stress analysis was conducted with the use of axisy mmetric finite element modeling scheme. A force of 100 N was applied at 30 degrees from the implant axis. Results: Stress analysis has shown no stress concentration around the marginal bone for the control model. As compared to the control model, the stress levels of 0.2 mm areas away from the recorded implant were slightly lower in Type I and Type IV models, but higher in Type II, Type III and Type V models. As compared to 15.09 MPa around for the control model, the stress levels were 14.78 MPa, 18.39 MPa, 21.11 MPa, 14.63 MPa, 17.88 MPa in the cases of Type I, II, III, IV and V models. Conclusion: From these results, the conclusion was drawn that the microthread and the concavity with either crestal or trans-gingival modules maybe used in standard size dental implants to reduce marginal bone stress.

Quantitative Microbial Risk Assessment of Pathogenic Vibrio through Sea Squirt Consumption in Korea (우렁쉥이에 대한 병원성 비브리오균 정량적 미생물 위해평가)

  • Ha, Jimyeong;Lee, Jeeyeon;Oh, Hyemin;Shin, Il-Shik;Kim, Young-Mog;Park, Kwon-Sam;Yoon, Yohan
    • Journal of Food Hygiene and Safety
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    • v.35 no.1
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    • pp.51-59
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    • 2020
  • This study evalutated the risk of foodborne illness from Vibrio spp. (Vibrio vulnificus and Vibrio cholerae) through sea squirt consumption. The prevalence of V. vulnificus and V. cholerae in sea squirt was evaluated, and the predictive models to describe the kinetic behavior of the Vibrio in sea squirt were developed. Distribution temperatures and times were collected, and they were fitted to probabilistic distributions to determine the appropriate distributions. The raw data from the Korea National Health and Nutrition Examination Survey 2016 were used to estimate the consumption rates and amount of sea squirt. In the hazard characterization, the Beta-Poisson model for V. vulnificus and V. cholerae infection was used. With the collected data, a simulation model was prepared and it was run with @RISK to estimate probabilities of foodborne illness by pathogenic Vibrio spp. through sea squirt consumption. Among 101 sea squirt samples, there were no V. vulnificus positive samples, but V. cholerae was detected in one sample. The developed predictive models described the fates of Vibrio spp. in sea squirt during distribution and storage, appropriately shown as 0.815-0.907 of R2 and 0.28 of RMSE. The consumption rate of sea squirt was 0.26%, and the daily consumption amount was 68.84 g per person. The Beta-Poisson model [P=1-(1+Dose/β)] was selected as a dose-response model. With these data, a simulation model was developed, and the risks of V. vulnificus and V. cholerae foodborne illness from sea squirt consumption were 2.66×10-15, and 1.02×10-12, respectively. These results suggest that the risk of pathogenic Vibrio spp. in sea squirt could be considered low in Korea.

Numerical studies of information about elastic parameter sets in non-linear elastic wavefield inversion schemes (비선형 탄성파 파동장 역산 방법에서 탄성파 변수 세트에 관한 정보의 수치적 연구)

  • Sakai, Akio
    • Geophysics and Geophysical Exploration
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    • v.10 no.1
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    • pp.1-18
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    • 2007
  • Non-linear elastic wavefield inversion is a powerful method for estimating elastic parameters for physical constraints that determine subsurface rock and properties. Here, I introduce six elastic-wave velocity models by reconstructing elastic-wave velocity variations from real data and a 2D elastic-wave velocity model. Reflection seismic data information is often decoupled into short and long wavelength components. The local search method has difficulty in estimating the longer wavelength velocity if the starting model is far from the true model, and source frequencies are then changed from lower to higher bands (as in the 'frequency-cascade scheme') to estimate model elastic parameters. Elastic parameters are inverted at each inversion step ('simultaneous mode') with a starting model of linear P- and S-wave velocity trends with depth. Elastic parameters are also derived by inversion in three other modes - using a P- and S-wave velocity basis $('V_P\;V_S\;mode')$; P-impedance and Poisson's ratio basis $('I_P\;Poisson\;mode')$; and P- and S-impedance $('I_P\;I_S\;mode')$. Density values are updated at each elastic inversion step under three assumptions in each mode. By evaluating the accuracy of the inversion for each parameter set for elastic models, it can be concluded that there is no specific difference between the inversion results for the $V_P\;V_S$ mode and the $I_P$ Poisson mode. The same conclusion is expected for the $I_P\;I_S$ mode, too. This gives us a sound basis for full wavelength elastic wavefield inversion.

Analytical Model for Deriving the I-V Characteristics of an Intrinsic Cylindrical Surrounding Gate MOSFET (Intrinsic Cylindrical/Surrounding Gate SOI MOSFET의 I-V 특성 도출을 위한 해석적 모델)

  • Woo, Sang-Su;Lee, Jae-Bin;Suh, Chung-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.10
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    • pp.54-61
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    • 2011
  • In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.