• Title/Summary/Keyword: V/C

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Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction (탄화규소 휘스커의 합성(I) : 반응기구의 율속반응)

  • 최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1329-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

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[r, s, t; f]-COLORING OF GRAPHS

  • Yu, Yong;Liu, Guizhen
    • Journal of the Korean Mathematical Society
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    • v.48 no.1
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    • pp.105-115
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    • 2011
  • Let f be a function which assigns a positive integer f(v) to each vertex v $\in$ V (G), let r, s and t be non-negative integers. An f-coloring of G is an edge-coloring of G such that each vertex v $\in$ V (G) has at most f(v) incident edges colored with the same color. The minimum number of colors needed to f-color G is called the f-chromatic index of G and denoted by ${\chi}'_f$(G). An [r, s, t; f]-coloring of a graph G is a mapping c from V(G) $\bigcup$ E(G) to the color set C = {0, 1, $\ldots$; k - 1} such that |c($v_i$) - c($v_j$ )| $\geq$ r for every two adjacent vertices $v_i$ and $v_j$, |c($e_i$ - c($e_j$)| $\geq$ s and ${\alpha}(v_i)$ $\leq$ f($v_i$) for all $v_i$ $\in$ V (G), ${\alpha}$ $\in$ C where ${\alpha}(v_i)$ denotes the number of ${\alpha}$-edges incident with the vertex $v_i$ and $e_i$, $e_j$ are edges which are incident with $v_i$ but colored with different colors, |c($e_i$)-c($v_j$)| $\geq$ t for all pairs of incident vertices and edges. The minimum k such that G has an [r, s, t; f]-coloring with k colors is defined as the [r, s, t; f]-chromatic number and denoted by ${\chi}_{r,s,t;f}$ (G). In this paper, we present some general bounds for [r, s, t; f]-coloring firstly. After that, we obtain some important properties under the restriction min{r, s, t} = 0 or min{r, s, t} = 1. Finally, we present some problems for further research.

Using Tabu Search for L(2,1)-coloring Problem of Graphs with Diameter 2 (Tabu Search를 이용한 지름이 2인 그래프에 대한 L(2,1)-coloring 문제 해결)

  • Kim, SoJeong;Kim, ChanSoo;Han, KeunHee
    • Journal of Digital Convergence
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    • v.20 no.2
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    • pp.345-351
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    • 2022
  • For simple undirected graph G=(V,E), L(2,1)-coloring of G is a nonnegative real-valued function f : V → [0,1,…,k] such that whenever vertices x and y are adjacent in G then |f(x)-f(y)|≥ 2 and whenever the distance between x and y is 2, |f(x)-f(y)|≥ 1. For a given L(2,1)-coloring c of graph G, the c-span is λ(c) = max{|c(v)-c(v)||u,v∈V}. L(2,1)-coloring number λ(G) = min{λ(c)} where the minimum is taken over all L(2,1)-coloring c of graph G. In this paper, based on Harary's Theorem, we use Tabu Search to figure out the existence of Hamiltonian Path in a complementary graph and confirmed that if λ(G) is equal to n(=|V|).

Effect of substrate bias voltage on a-C:H film (기판 bias 전압이 a-C:H 박막의 특성에 미치는 영향)

  • 유영조;김효근;장홍규;오재석;김근식
    • Journal of the Korean Vacuum Society
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    • v.6 no.4
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    • pp.348-353
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    • 1997
  • Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

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A Study on the Treatment of Combine Electron Beam in the Treatment of Breast Cancer Tumor Bed (유방암 Tumor bed 치료 시 혼합 전자선 치료 방법에 대한 고찰)

  • Lee, Geon Ho;Kang, Hyo Seok;Choi, Byoung Joon;Park, Sang Jun;Jung, Da Ee;Lee, Du Sang;Ahn, Min Woo;Jeon, Myeong Soo
    • The Journal of Korean Society for Radiation Therapy
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    • v.31 no.1
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    • pp.51-56
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    • 2019
  • Purpose: The usefulness of using single-electron radiation for secondary radiotherapy of breast cancer patients after surgery is assessed and the use of a combine of different energy. Methods and materials : In this study, 40 patients (group A) using energy 6 MeV and 9 MeV, and 19 patients (group B) using a combine of 9 MeV and 12 MeV were studied among 59 patients who performed secondary care using combine electronic radiation. Each patient in each group, 6 MeV, 9 MeV, Combine(6 MeV / 9 MeV) and 9 MeV, 12 MeV, Combine (9 MeV / 12 MeV) were developed in different ways, and the maximum doses delivered to the original hospital, D95, D5, and $V_3$, $V_5$, $V_{10}$ were compared. Result: The D95 mean value of Group A treatment plan was $785.33{\pm}225.37cGy$, $1121.79{\pm}87.02cGy$ at 9 MeV, and $1010.98{\pm}111.17cGy$ at 6 MeV / 9 MeV, and the mean value at 6 MeV / 9 MeV was most appropriate for the dose. The mean values of the low dose area $V_3$ and $V_5$ in the lung of the breast direction being treated were $3.24{\pm}3.49%$ and $0.72{\pm}1.55%$ at 6 MeV, the highest 9 MeV at $7.25{\pm}4.59%$, $3.07{\pm}2.64%$, the lowest at 6 MeV. Maximum and average lung dose was $727.78{\pm}137.27cGy$ at 6 MeV / 9 MeV, $49.16{\pm}24.44cGy$, highest 9 MeV at $998.97{\pm}114.35cGy$, $85.33{\pm}41.18cGy$, and lowest 6 MeV at $387.78{\pm}208.88cGy$, $9.27{\pm}6.60cGy$. The value of $V_{10}$ was all close to zero. Group B appeared in the pattern of Group A. Conclusion: Relative differences in low-dose areas of the lungs $V_3$ and $V_5$ were seen and were most effective in the dose transfer of tumor bed in the application of combined energy. It is thought that the method of using electronic energy in further radiation treatments for breast cancer is a more effective way to use the energy effect of limiting energy resources, and that if you think about it again, it could be a little more beneficial radiation treatment for patients.

Weakly Complementary Cycles in 3-Connected Multipartite Tournaments

  • Volkmann, Lutz;Winzen, Stefan
    • Kyungpook Mathematical Journal
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    • v.48 no.2
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    • pp.287-302
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    • 2008
  • The vertex set of a digraph D is denoted by V (D). A c-partite tournament is an orientation of a complete c-partite graph. A digraph D is called cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that V(D) = $V(C_1)\;{\cup}\;V(C_2)$, and a multipartite tournament D is called weakly cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that $V(C_1)\;{\cup}\;V(C_2)$ contains vertices of all partite sets of D. The problem of complementary cycles in 2-connected tournaments was completely solved by Reid [4] in 1985 and Z. Song [5] in 1993. They proved that every 2-connected tournament T on at least 8 vertices has complementary cycles of length t and ${\mid}V(T)\mid$ - t for all $3\;{\leq}\;t\;{\leq}\;{\mid}V(T)\mid/2$. Recently, Volkmann [8] proved that each regular multipartite tournament D of order ${\mid}V(D)\mid\;\geq\;8$ is cycle complementary. In this article, we analyze multipartite tournaments that are weakly cycle complementary. Especially, we will characterize all 3-connected c-partite tournaments with $c\;\geq\;3$ that are weakly cycle complementary.

ISOBMFF encapsulation experiment based on the V3C bitstream (V3C 비트스트림 기반 ISOBMFF 캡슐화 실험)

  • Nam, Kwijung;Kim, Junsik;Kim, Kyuheon
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2021.06a
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    • pp.154-156
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    • 2021
  • 최근 3차원 영상이 다양한 분야에서 활용되고 있으며, 이에 따라 3차원 영상에 대한 압축과 전송 방안에 대한 연구가 활발히 진행되고 있다. 국제 표준화 기구인 ISO/IEC 산하 Moving Picture Expert Group(MPEG)에서는 기존의 2차원 비디오 코덱을 이용하여 고밀도 포인트 클라우드 압축하는 방안인 V-PCC와 3DoF+ 영상을 압축하기 위한 방안인 MPEG Immersive Video(MIV)를 표준화 중에 있다. V-PCC와 MIV는 압축 방법의 유사성으로 인해 동일한 Volumetric Visual Video-based Coding(V3C) 형식으로 저장된다. 압축된 V3C 데이터를 효과적으로 저장하여 이용하기 위해서는 ISO based Media File Format(ISOBMFF) 캡슐화 과정이 필수적이다. 본 논문에서는 MPEG의 Carriage of V3C data 표준에 따라 V3C 데이터를 ISOBMFF로 캡슐화 실험을 진행하였으며, 실험에 대한 검증을 위하여 생성된 ISOBMFF 데이터를 V3C 데이터로 복원한 뒤, 디코딩 하여 확인하였다.

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A Study on the Validity of C-V Method for Extracting the Effective Channel Length of MOSFET) (MOSFET의 Effective Channel Length를 추출하기 위한 C-V 방법의 타당성 연구)

  • 이성원;이승준;신형순
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.10
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    • pp.1-8
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    • 2002
  • C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

Interoperable Middleware Gateway Based on HLA and DDS for L-V-C Simulation Training Systems (L-V-C 훈련체계 연동을 위한 HLA, DDS 기반의 연동 미들웨어 게이트웨이)

  • Jun, Hyung Kook;Eom, Young Ik
    • IEMEK Journal of Embedded Systems and Applications
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    • v.10 no.6
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    • pp.345-352
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    • 2015
  • Recently, by developing many training systems in battle field, the demand for interconnecting and internetworking between Live, Virtual, Constructive training systems has been increased to support efficient data distribution and system control. But, there are lots of problems for them to interwork, because the existing researches only support L-L, V-V, C-C Interoperability. Therefore, we propose L-V-C gateway to provide interoperable simulation environment based on HLA and DDS between them. First, we illustrate FOM Management that parses RPR-FOM XML file to acquire Data information to be shared between them, and generates common data structure and source code used for L-V-C Gateway. L-V-C Gateway created from FOM Management supports Data Conversion and Quality of Service between HLA and DDS. HLA Federate and DDS Domainparticipant in L-V-C Gateway play a role of logical communication channel and relay data from HLA Federation to DDS Domain and vice versa.

Fabrications and Characterization of High Temperature, High Voltage Ni/6H-SiC and Ni/4H-SiC Schottky Barrier Diodes (고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구)

  • Lee, Ho-Seung;Lee, Sang-Wuk;Shin, Dong-Hyuk;Park, Hyun-Chang;Jung, Woong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.70-77
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    • 1998
  • Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

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