1 |
P. Vitanov, U. Schwabe and I, Eisele, 'Electrical Characterize of Feature Sizes and Parasitic Capacitances Using a Single Test Structure,' IEEE Trans, Electron Devices, Vol. ED-31, p. 96, 1984
|
2 |
B.J. Sheu and P.K. Ko, 'A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's' IEEE Electron Device Lett., Vol. EDL-5, p. 491, 1984
|
3 |
J.-C, Guo, S. S-S. Chung, and C. C.-H, Hsu, 'A New Approach to Determine the Effective Channel Length and the Drain-and-Source Series Resistance of Minaturized MOSFET's' IEEE Trans Electron Devices, Vol. 41, p. 403, 1994
DOI
ScienceOn
|
4 |
L. Selmi, E. Sangiori and B. Ricco, 'Parameter extraction from I-V Characteristics of single MOSFET's' IEEE Trans Electron Devices, Vol.36, p.1094, 1989
DOI
ScienceOn
|
5 |
R Narayanan, 'Two-dimensional nurmerical analysis for extracting the effective channel lenth of shor-channel MOSFETs', Solid-state Eletronics, Vol. 38, p. 1155, 1995
DOI
ScienceOn
|
6 |
MEDICI Manual (version 4.0.0)
|
7 |
C.T. Yao, I.A. Mack and H.C. Lin, 'Accuracy of Effective Channel-Length Extraction Using the Capacitance Method' IEEE Electron Devices Lett., Vol.EDL-7, p.268, 1986
|
8 |
P. Viatanove, T. Dimitrova, R. Kamburova and K. Filljov, 'Capacitance Method for determination of LDD MOSFET Geometrical Parameters,; Soild-State Electronics, Vol. 35, p. 985, 1992
DOI
ScienceOn
|