Browse > Article

A Study on the Validity of C-V Method for Extracting the Effective Channel Length of MOSFET)  

이성원 (이화여자대학교 정보통신학과)
이승준 (이화여자대학교 전자공학과)
신형순 (이화여자대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.10, 2002 , pp. 1-8 More about this Journal
Abstract
C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.
Keywords
Citations & Related Records
연도 인용수 순위
  • Reference
1 P. Vitanov, U. Schwabe and I, Eisele, 'Electrical Characterize of Feature Sizes and Parasitic Capacitances Using a Single Test Structure,' IEEE Trans, Electron Devices, Vol. ED-31, p. 96, 1984
2 B.J. Sheu and P.K. Ko, 'A Capacitance Method to Determine Channel Lengths for Conventional and LDD MOSFET's' IEEE Electron Device Lett., Vol. EDL-5, p. 491, 1984
3 J.-C, Guo, S. S-S. Chung, and C. C.-H, Hsu, 'A New Approach to Determine the Effective Channel Length and the Drain-and-Source Series Resistance of Minaturized MOSFET's' IEEE Trans Electron Devices, Vol. 41, p. 403, 1994   DOI   ScienceOn
4 L. Selmi, E. Sangiori and B. Ricco, 'Parameter extraction from I-V Characteristics of single MOSFET's' IEEE Trans Electron Devices, Vol.36, p.1094, 1989   DOI   ScienceOn
5 R Narayanan, 'Two-dimensional nurmerical analysis for extracting the effective channel lenth of shor-channel MOSFETs', Solid-state Eletronics, Vol. 38, p. 1155, 1995   DOI   ScienceOn
6 MEDICI Manual (version 4.0.0)
7 C.T. Yao, I.A. Mack and H.C. Lin, 'Accuracy of Effective Channel-Length Extraction Using the Capacitance Method' IEEE Electron Devices Lett., Vol.EDL-7, p.268, 1986
8 P. Viatanove, T. Dimitrova, R. Kamburova and K. Filljov, 'Capacitance Method for determination of LDD MOSFET Geometrical Parameters,; Soild-State Electronics, Vol. 35, p. 985, 1992   DOI   ScienceOn