Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Validity of C-V Method for Extracting the Effective Channel Length of MOSFET)

MOSFET의 Effective Channel Length를 추출하기 위한 C-V 방법의 타당성 연구

  • 이성원 (이화여자대학교 정보통신학과) ;
  • 이승준 (이화여자대학교 전자공학과) ;
  • 신형순 (이화여자대학교 전자공학과)
  • Published : 2002.10.01
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Abstract

C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

C-V 방법은 소형화된 MOSFET에서 effective channel length(L/sub eff/)를 추출하기 위한 방법 중 한가지이다. 이 방법은 critical gate bias point에서 channel length에 영향을 받지 않는 extrinsic overlap 영역의 길이(△L)를 구하여 L/sub eff/를 추출하게 된다.본 논문에서는 서로 다른 두 개의 C-V 방법에 대해 실험을 수행하였다. 그리고 실험으로 추출한 값과 2차원 소자 시뮬레이터의 결과를 비교하여 C-V 방법의 정화도를 분석하였다.

Keywords

References

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