• 제목/요약/키워드: Ultra-sensitive

검색결과 149건 처리시간 0.032초

5G 모바일 네트워크의 Industrial IoT 표준기술 동향 (Industrial IoT Standardization Trend of the 5G Mobile Network)

  • 김경수;강유화;김창기
    • 전자통신동향분석
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    • 제36권6호
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    • pp.13-24
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    • 2021
  • Industrial networks has been developing various technologies from fieldbus technology to industrial Ethernet and time-sensitive networking. The industry expects that the 5G mobile network will solve the diverse and highly specific industrial site requirements. Accordingly, 3GPP has been developing standard functions to provide ultra-high reliability, ultra-high speed, ultra-connection, and ultra-low latency services, and 3GPP Rel-16 began developing ultra-low latency and ultra-high reliability communication functions for 5G mobile networks to support vertical industries. In this paper, we show the related standardization trends and requirements to apply industrial IoT service scenarios to 5G mobile networks, and in particular, we introduce 5G system features and extended 5G system architecture to provide time sensitive communication and time synchronization services.

친환경 Ultra-capacitor에 의한 순시전압강하의 직렬전압보상 시스템 (Series Voltage Compensation Systems for Voltage Sag by Using an Environmentally Friendly Ultra-capacitor)

  • 손진근;전희종
    • 전기학회논문지
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    • 제58권4호
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    • pp.763-769
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    • 2009
  • A series voltage compensation(SVC) system is a power-electronics controller that can protect sensitive loads from disturbance in the supply system. Especially, voltage sags are considered the dominant disturbances affecting the power quality. This paper dealt with a system of off-line type voltage sag compensation by using a bi-directional DC/DC converter of environmentally friendly ultra-capacitor. This capacitor is attached to the DC link of SVC through the high-efficiency DC/DC converter in order to compensate the DC link voltage drop during short-term power interruption as voltage sags. Therefore, in this paper, a DC/DC converter to control high-efficiency energy of ultra-capacitor and voltage sag detection algorithm of off-line type SVC systems are newly introduced. According to the results of experimental of prototype system, it is verified that the proposed system has effectiveness of voltage sag compensation using an ultra-capacitor.

거미 모사 초고감도 센서와 인공지능을 활용한 작업자 손목 부하 측정 및 경고 시스템 (Ultra-sensitive, Spider Inspired Sensor and Artificial Intelligence Analysis for Recording of Wrist Load and Warning System)

  • 김나경;신채림;하정석;최용환
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2021년도 춘계학술대회
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    • pp.421-422
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    • 2021
  • 본 논문은 손목에 가해지는 부하를 측정하기 위한 초고감도 센서와 신호 분석 시스템을 개발한다. 초고감도 센서는 거미의 기관을 모사하여 제작되며, 손목에 부착되어 측정된 신호는 FFT (Fast Fourier Transform) 과 퍼지 시스템을 이용하여 분석된다.

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Ultra-sensitive HBsAg IRMA 키트의 민감도 및 변이형 검출능 평가 (The Assessment of Ultrasensitive HBsAg kit's Sensitivity level and Performance in Detection of Mutant Forms)

  • 하동혁;민경선;노경운;김현주
    • 핵의학기술
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    • 제15권1호
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    • pp.121-125
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    • 2011
  • 배경 : B형간염표면항원(HBsAg)은 B형간염의 진단에 있어 가장 중요한 혈청학적 지표 중 하나이다. HBsAg 검사에 대한임상검사실의 수요에 맞추어 자동화 장비 및 검사법이 계속 개발되어 왔다. 본 연구는 국내에 보급된 RIAKEY, BNIBT, RIAKEY Ultra Sensitive HBsAg, ROCHE 키트의 민감도 및 변이형 검출능과 CLIA법의 CENTAUR 장비와 RIAKEY Ultra Sensitive HBsAg의 상관계수를 알아보고자 하였다. 방법 : WHO $1^{st}$ International Standard 1985(80/549), WHO $2^{nd}$ International Standard 2003 (00/588) 표준물질 2개를 이용하여 농도별 0.08, 0.04, 0.02, 0.01, 0.005 IU/ml 까지 계단희석을 시행하였으며, Subtype ad 9종, Subtype ay 변이시료 1종을 이용하여 RIAKEY, BNIBT, RIAKEY Ultra Sensitive HBsAg, ROCHE 키트를 이용하여 시행하였다. 그리고, 아형 검출에 사용된 변이시료 10종에 대한 IRMA법의 RIAKEY Ultra Sensitive HBsAg와 CLIA법의 CENTAUR 장비를 이용한 상관계수를 비교하였다. 결과 : 표준물질의 농도별 측정 시 WHO 0.01 PANEL 에서 Index 1.0 이상의 결과 값을 얻었으며, 그 결과 민감도는 0.01 IU/ml로 측정되었다. RIAKEY Ultra sensitve HBsAg 키트가 민감도측면에서 우수함을 알 수 있었다. RIAKEY Ultra sensitve HBsAg IRMA 키트에서는 adw2 9종과 ayw1 1종의 변이형 형태에 따라 모두 Index 1.0 이상으로 혈청중의 HBsAg을 100% 측정할수 있었다. RIAKEY Ultra sensitive HBsAg와 CLIA의 결과가 Y=1.0075 X + 1.2434, $R^2$=0.9982으로 우수한 상관성을 보였다. 결론 : 4세대인 IRMA법의 Ultra Sensitive HBsAg 키트로 혈청중의 HBsAg과 여러 가지 아형을 신속하고 정확히 측정하여 질병을 진단 할 수 있을 것으로 여겨진다.

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제4차 산업혁명 시대를 위한 초저지연 네트워킹 기술 동향 (Research Trend in Ultra-Low Latency Networking for Fourth Industrial Revolution)

  • 강태규;강유화;유연철;정태식
    • 전자통신동향분석
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    • 제34권6호
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    • pp.108-122
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    • 2019
  • Ultra-low latency networking is a technology that reduces the end-to-end latency related to transport time-sensitive or mission-critical traffic in a network. As the proliferation of the fourth industrial revolution and 5G mobile communications continues, ultra-low latency networking is emerging as an essential technology for supporting various network applications (such as industrial control, tele-surgery, and unmanned vehicles). In this report, we introduce the ultra-low-latency networking technologies that are in progress, categorized by application area, and examine their up-to-date standard status.

Ultra-Low-Power Differential ISFET/REFET Readout Circuit

  • Thanachayanont, Apinunt;Sirimasakul, Silar
    • ETRI Journal
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    • 제31권2호
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    • pp.243-245
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    • 2009
  • A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

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감성 콘크리트 블루투스 스피커 (콩스) 제품 디자인 (Sensitive Product Design of Ultra High Performance Concrete (UHPC))

  • 김경환;김병일
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2020년도 봄 학술논문 발표대회
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    • pp.197-198
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    • 2020
  • A study was conducted on UHPC production using the silicone mold method. UHPC (Ultra-High-Performance Concrete) has the advantage of being able to shape the product in a free-form shape on concrete, but when mass-producing products in one design, such as electronic products, rather than one-time products such as buildings and decorations Demolition is difficult with wood and mold. This study uses silicone molds, UHPC mix to ensure fluidity, self-integrating performance and mechanical performance Prototyping was done proportionally.

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Super Coupling Dual-gate Ion-Sensitive Field-Effect Transistors

  • Jang, Hyun-June;Cho, Won-Ju
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.239-239
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    • 2013
  • For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

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Nb SQUID가 탑재된 초고감도 캔티레버 제작 (Fabrication of Nb SQUID on an Ultra-sensitive Cantilever)

  • 김윤원;이순걸;최재혁
    • Progress in Superconductivity
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    • 제11권1호
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    • pp.36-41
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    • 2009
  • Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

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