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Edge to Edge Model and Delay Performance Evaluation for Autonomous Driving (자율 주행을 위한 Edge to Edge 모델 및 지연 성능 평가)

  • Cho, Moon Ki;Bae, Kyoung Yul
    • Journal of Intelligence and Information Systems
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    • v.27 no.1
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    • pp.191-207
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    • 2021
  • Up to this day, mobile communications have evolved rapidly over the decades, mainly focusing on speed-up to meet the growing data demands of 2G to 5G. And with the start of the 5G era, efforts are being made to provide such various services to customers, as IoT, V2X, robots, artificial intelligence, augmented virtual reality, and smart cities, which are expected to change the environment of our lives and industries as a whole. In a bid to provide those services, on top of high speed data, reduced latency and reliability are critical for real-time services. Thus, 5G has paved the way for service delivery through maximum speed of 20Gbps, a delay of 1ms, and a connecting device of 106/㎢ In particular, in intelligent traffic control systems and services using various vehicle-based Vehicle to X (V2X), such as traffic control, in addition to high-speed data speed, reduction of delay and reliability for real-time services are very important. 5G communication uses high frequencies of 3.5Ghz and 28Ghz. These high-frequency waves can go with high-speed thanks to their straightness while their short wavelength and small diffraction angle limit their reach to distance and prevent them from penetrating walls, causing restrictions on their use indoors. Therefore, under existing networks it's difficult to overcome these constraints. The underlying centralized SDN also has a limited capability in offering delay-sensitive services because communication with many nodes creates overload in its processing. Basically, SDN, which means a structure that separates signals from the control plane from packets in the data plane, requires control of the delay-related tree structure available in the event of an emergency during autonomous driving. In these scenarios, the network architecture that handles in-vehicle information is a major variable of delay. Since SDNs in general centralized structures are difficult to meet the desired delay level, studies on the optimal size of SDNs for information processing should be conducted. Thus, SDNs need to be separated on a certain scale and construct a new type of network, which can efficiently respond to dynamically changing traffic and provide high-quality, flexible services. Moreover, the structure of these networks is closely related to ultra-low latency, high confidence, and hyper-connectivity and should be based on a new form of split SDN rather than an existing centralized SDN structure, even in the case of the worst condition. And in these SDN structural networks, where automobiles pass through small 5G cells very quickly, the information change cycle, round trip delay (RTD), and the data processing time of SDN are highly correlated with the delay. Of these, RDT is not a significant factor because it has sufficient speed and less than 1 ms of delay, but the information change cycle and data processing time of SDN are factors that greatly affect the delay. Especially, in an emergency of self-driving environment linked to an ITS(Intelligent Traffic System) that requires low latency and high reliability, information should be transmitted and processed very quickly. That is a case in point where delay plays a very sensitive role. In this paper, we study the SDN architecture in emergencies during autonomous driving and conduct analysis through simulation of the correlation with the cell layer in which the vehicle should request relevant information according to the information flow. For simulation: As the Data Rate of 5G is high enough, we can assume the information for neighbor vehicle support to the car without errors. Furthermore, we assumed 5G small cells within 50 ~ 250 m in cell radius, and the maximum speed of the vehicle was considered as a 30km ~ 200 km/hour in order to examine the network architecture to minimize the delay.

Development of Saccharomyces cerevisiae Strains with High RNA Content (리보핵산을 다량으로 함유하는 Saccharomyces cerevisiae 균주의 개발)

  • Kim, Jae-Sik;Kim, Jin-Wook;Shim, Won;Min, Byoung-Cheol;Kim, Jung-Wan;Park, Kwan-Hwa;Pek, Un-Hua
    • Korean Journal of Food Science and Technology
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    • v.31 no.2
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    • pp.465-474
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    • 1999
  • RNase activity of Saccharomyces cerevisiae ATCC 7754 was investigated to obtain strains with high ribonucleic acid (RNA) content. The yeast strain contained two RNase activities; an acidic RNase with a optima of pH $3{\sim}4$ and an alkaline RNase with a optima pH 9. The acidic RNase activity was inhibited by $0.08\;M\;HgCl_{2}$ most drastically. The alkaline RNase activity was inhibited by 2.0 M NaCl or KCl, while enhanced by addition of $0.05\;M\;CaCl_{2},\;0.02\;M\;ZnSO_{4},\;or\;0.008\;M\;HgCl_{2}$. Various mutants of Saccharomyces cerevisiae ATCC 7754 were isolated by ethylmethane sulfonate (EMS) treatment or $\gamma$-ray/ultra violet irradiation. Among the mutants that were sensitive to high concentration of KCl which inhibits alkaline RNase, B24 was selected for high RNA content per culture volume. Growth characteristics of the mutant were comparable to those of the mother strain with optimum growth at pH $4.5{\sim}5.5$. The mutant accumulated higher content of RNA than the mother strain when glucose was used as the carbon source. However, both growth rate and total RNA content of the mutant were higher in molasses medium than in glucose medium. RNA content of the mutant increased rapidly during the early stage of growth, and then decreased gradually until the culture reached stationary phase by a fed-batch culture in a 5 L jar fermenter. Maximal cell harvest and the final RNA content using the mutant B24 were 69.6 g/L culture broth and 19.8 g/100 g of the dry cell while those using the mother strain were 68 g/L culture broth and 16.1 g/100 g of dry cell, respectively.

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Surface and Chemical Properties of Surface-modified UHMWPE Powder and Mechanical Properties of Self Curing PMMA Bone Cement Containing UHMWPE Powder I. Effect of MMA/Xylene Contents on Surface Modification of UHMWPE (표면개질된 초고분자량 폴리에틸렌 분말의 표면과 화학적 특성 및 이를 함유하는 상온 경화용 폴리(메틸 메타크릴레이트) 뼈 시멘트의 기계적 특성 I. 메틸 메타크릴레이트/자일렌 함량에 따른 초고분자량 폴리에틸렌의 표면 개질 효과)

  • 양대혁;윤관희;김순희;이종문;강길선
    • Polymer(Korea)
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    • v.28 no.1
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    • pp.77-85
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    • 2004
  • It has been widely used ultra high molecular weight polyethylene (UHMWPE) for the biomaterials due to its excellent mechanical properties and biocompatibility. In the case of blend of UHMPE with another polymeric biomaterials, however, UHMWPE might have low blend compatibility due to surface inertness. In this study, in order to improve the mechanical properties of poly(methyl methacrylate) (PMMA) bone cement by means of the impregnation of UHMWPE powder, we developed the novel surface modification method by the mixture of methyl methacrylate (MMA) and xylene. We investigated the variation of composition of MMA/xylene. It was confirmed by the analysis of Fourier transform infrared-attenuated total reflectance, scanning electron microscope, universal transverse mercator, and digital thermometer. The maximum mechanical strength of surface modified UHMWPE powder impregnated PMMA bone cement compound was observed the ratio of 1 : 1 (v/v%) MMA/xylene. Also its curing temperature decreased from 103 $^{\circ}C$ to 58 ∼ 73 $^{\circ}C$ The mechanism of surface modification of UHMWPE powder by the mixture of MMA/xylene has been proposed.

Fabrications and Analysis of Schottky Diode of Silicon Carbide Substrate with novel Junction Electric Field Limited Ring (새로운 전계 제한테 구조를 갖는 탄화규소 기판의 쇼트키 다이오드의 제작과 특성 분석)

  • Cheong Hui-Jong;Han Dae-Hyun;Lee Yong-Jae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.7
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    • pp.1281-1286
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    • 2006
  • We have used the silicon-carbide(4H-SiC) instead of conventional silicon materials to develope of the planar junction barrier schottky rectifier for ultra high breakdown voltage(1,200 V grade). The substrate size is 2 inch wafer, Its concentration is $3*10^{18}/cm^{3}$ of $n^{+}-$type, thickness of epitaxial layer $12{\mu}m$ conentration is $5*10^{15}cm^{-3}$ of n-type. The fabticated devices are junction barrier schottky rectifier, The guard ring for improvement of breakdown voltage is designed by the box-like impurity of boron, the width and space of guard ring was designed by variation. The contact metals to rectify were used by the $Ni(3,000\:{\AA})/Au(2,000\:{\AA})$. As a results, the on-state voltage is 1.26 V, on-state resistance is $45m{\Omega}/cm^{3}$, maximum value of improved reverse breakdown voltage is 1180V, reverse leakage current density is $2.26*10^{-5}A/CM^{3}$. We had improved the measureme nt results of the electrical parameters.

Physiological Responses and Phytoextraction Potential of Pinus thunbergii on Cd-contaminated Soil

  • Han, Sim-Hee;Kim, Du-Hyun;Ultra, Venecio U. Jr.;Lee, Jae-Cheon
    • Journal of Korean Society of Forest Science
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    • v.99 no.5
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    • pp.711-719
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    • 2010
  • We investigated physiological responses and phytoextraction ability of Pinus thunbergii in cadmium contaminated soil as part of our efforts in identifying plant materials for the restoration and revegetation of forest soil contaminated by heavy metals. Thirty seedlings (ten per treatment) were assigned to three treatments (control, 0.3 and 0.6 mM $CdSO_4$ solution) at first year experiment. At second year, ten seedlings per treatment treated with Cd during the first year experiment were divided by two groups (no Cd-treated and consecutive Cd-treated group). At first experiment, photosynthetic pigment content, and superoxide dismutase (SOD) and glutathione reductase (GR) activities have significantly reduced by Cd application, and the reduction rate was increased much higher as the rate of Cd application increased. On the other hand, thiol and malondialdehyde (MDA) content were significantly increased at the application of 0.6 mM of Cd. At the second year experiment, a general increase in chlorophyll and carotenoid content was observed with Cd treatment while SOD and GR activities showed a relative reduction compared to the control. Similar to the first year measurement, thiol and MDA contents also increased considerably due to Cd treatment. At harvest, dry matter was significantly reduced by Cd treatment especially at the rate of 0.6 mM Cd, but dry yield of P. thunbergii treated with 0.3 mM Cd was less affected and it was comparable with the control seedling. Cadmium concentration in seedling tissues increased with increasing Cd application rate while Cd uptake was higher in seedlings supplied with 0.3 mM Cd, which could be ascribed to their high dry matter. Overall, our study has demonstrated the unique physiological response of P. thunbergii to Cd-prolonged exposure by showing that the changes in photosynthetic pigment content and antioxidative enzyme activities were dependent on the concentration and duration of treatment. In addition, our results have demonstrated the potential of P. thunbergii to withstand up to 0.3 mM Cd (equivalent to cumulative Cd concentration of 134.4 to 268 mg $kg^{-1}$) without showing growth reduction, hence it might be used for phytoremediation of Cd contaminated areas.

An Explorative Study of R&D Priority based on Needs Attributes Model: Case of SMART TV (니즈속성의 중요성과 시급성에 의한 R&D 우선순위 결정에 관한 탐색 연구: SMART TV를 중심으로)

  • Han, Sung-Soo;Choi, Saesol
    • Journal of Korea Technology Innovation Society
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    • v.16 no.3
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    • pp.650-671
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    • 2013
  • Products elicit the consumer's purchasing behavior by satisfying their needs and are cognized as the combination of various needs attributes. Also R&D is referred as a series of technical development activities to meet the consumer's needs attributes. In particular, in the market-oriented R&D era, it could obtain the legitimacy by developing the R&D based on the needs attributes. In this study, we aimed to investigate the priority setting in R&D field, considering consumer's needs attributes. To be concrete, we tried to present the evolutional direction of desirable phased R&D according to 'the importance degree for consumers on the attributes (functions) of the certain products' and 'the urgency degree of technical quality to fulfill its needs'. To achieve this, we targeted SMART TV, the convergence product, which contains the uncertainty in terms of marketability and technological aspect, and analyzed the priority of the R&D in SMART TV field. Based on the result of the analysis, 4-steps product concept (ultra high definition TV, interactive TV, 3D/immersive TV, personalized TV) is derived by analyzing the evolutional direction of R&D in SMART TV field. This finding implies that the success possibilities of product could be enhanced during the process of the evolution of products that have multiple needs attributes, by pursuing the R&D which fulfills the needs attribute first required in the market. In addition, it provides a useful framework to design the R&D roadmap in an aspect of R&D strategy.

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A 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS Algorithmic A/D Converter (14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS 알고리즈믹 A/D 변환기)

  • Park, Yong-Hyun;Lee, Kyung-Hoon;Choi, Hee-Cheol;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.65-73
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    • 2006
  • This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

A Frequency Synthesizer for MB-OFDM UWB with Fine Resolution VCO Tuning Scheme (고 해상도 VCO 튜닝 기법을 이용한 MB-OFDM UWB용 주파수 합성기)

  • Park, Joon-Sung;Nam, Chul;Kim, Young-Shin;Pu, Young-Gun;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.117-124
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    • 2009
  • This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics (실리콘 나노 와이어 기반의 무접합 MOSFET의 최적 설계 및 기본적인 고주파 특성 분석)

  • Cha, Seong-Jae;Kim, Kyung-Rok;Park, Byung-Gook;Rang, In-Man
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.10
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    • pp.14-22
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    • 2010
  • The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

Novel synthesis of nanocrystalline thin films by design and control of deposition energy and plasma

  • Han, Jeon G.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.77-77
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    • 2016
  • Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

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