• 제목/요약/키워드: Ultra Capacitor

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Power Distribution Strategy for Wireless Tram with Hybrid Energy Storage System (하이브리드 에너지 저장장치를 탑재한 무가선 트램의 전력분배전략)

  • Kang, Kyung-Jin;Oh, Yong-Kuk;Lee, Jee-Ho;Yeom, Min-Kyu;Kwak, Jae-Ho;Lee, Hyeong-Cheol
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.11
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    • pp.1615-1621
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    • 2014
  • A wireless tram which runs without catenary and instead uses batteries installed in the tram has been recently researched actively. This paper presents a new method maximizing absorption of regenerative energy of a wireless tram and extending life cycle of the energy storage device in the wireless tram by applying line-optimized charging and discharging scenario. Energy efficiency and life cycle of energy storage system (ESS) are highly dependent on the characteristic of operating conditions. For example, frequent charge and discharge with high power cause the problems that decrease the battery life cycles. Hybrid energy storage system (HESS) is combination of two ESSs which have complementary characteristics to each other. HESS can provide even better functionality and performance than the battery only ESS due to the synergy effect of two ESSs. This paper also provides a power distribution strategy and driving scenarios which increase the life cycle and energy efficiency of the HESS consisting of a battery and an ultra-capacitor. The developed strategy was tested and verified by a hardware-in-the-loop-simulation (HILS) system which emulates the a wireless tram.

Digital Low-Power High-Band UWB Pulse Generator in 130 nm CMOS Process (130 nm CMOS 공정을 이용한 UWB High-Band용 저전력 디지털 펄스 발생기)

  • Jung, Chang-Uk;Yoo, Hyun-Jin;Eo, Yun-Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.7
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    • pp.784-790
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    • 2012
  • In this paper, an all-digital CMOS ultra-wideband(UWB) pulse generator for high band(6~10 GHz) frequency range is presented. The pulse generator is designed and implemented with extremely low power and low complexity. It is designed to meet the FCC spectral mask requirement by using Gaussian pulse shaping circuit and control the center frequency by using CMOS delay line with shunt capacitor. Measurement results show that the center frequency can be controlled from 4.5 GHz to 7.5 GHz and pulse width is 1.5 ns and pulse amplitude is 310 mV peak to peak at 10 MHz pulse repetition frequency(PRF). The circuit is implemented in 0.13 um CMOS process with a core area of only $182{\times}65um^2$ and dissipates the average power of 11.4 mW at an output buffer with 1.5-V supply voltage. However, the core consumes only 0.26 mW except for output buffer.

A Study on the Electrical Characteristics of Ultra Thin Gate Oxide

  • Eom, Gum-Yong
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.169-172
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    • 2004
  • Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ~ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

Control and Design of a Arc Power Supply for KSTAR's the Neutral Beam Injection

  • Ryu, Dong-Kyun;Lee, Hee-Jun;Lee, Jung-Hyo;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
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    • v.10 no.1
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    • pp.216-226
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    • 2015
  • The neutral beam injection generate ultra-high temperature energy in the tokamak of nuclear fusion. The neutral beam injection make up arc power supply, filament power supply and acceleration & deceleration power supply. The arc power supply has characteristics of low voltage and high current. Arc power supply generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The proposed buck converter used parallel switch because it can be increased capacity and decrease conduction loss. When an arc generated, the neutral beam injection chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus the proposed converter should be designed for the characteristics of low voltage and high current. Also, the arc power supply should be guaranteed for system stability. The proposed parallel buck converter enables the system stability of the divided low output voltage and high current. The proposed converter with constant output be the most important design of the output inductor. In this paper, designed arc power supply verified operation of system and stability through simulation and prototype. After it is applied to the 288[kW] arc power supply for neutral beam injection.

The Design and Implementation of Arc Power supply for Neutral Beam Injection (중성입자빔 가열을 위한 아크 전원 공급장치 설계 및 구현)

  • Lee, Hee-Jun;Shin, Soo-Cheol;Lee, Seung-Gyo;Jung, Yong-Chae;Won, Chung-Yuen
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.6
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    • pp.50-58
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    • 2013
  • The Neutral Beam Injection(NBI) generates ultra-high temperature energy in the tokamak of nuclear fusion. The NBI consists of filament power supply acceleration and deceleration power supply and arc power supply(APS). The APS has characteristics of low voltage and high current. APS generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The case of proposed buck converter used parallel switch because it can increase capacity and decrease conduction loss. When an arc is generated, the NBI chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus buck converter with constant output is the most important design of the output inductor. In this paper, designed APS verified operation of system and stability through simulation and prototype.

A CMOS TX Leakage Canceller Using an Autotransformer for RFID Application (오토트랜스포머를 이용한 RFID용 CMOS 송신 누설 신호 제거기)

  • Choi, In-Duck;Kwon, Ick-Jin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.8
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    • pp.784-789
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    • 2011
  • In this paper, a tunable integrated transmitter leakage canceller based on an autotransformer for ultra-high-frequency (UHF) RFID readers is presented. The proposed TX leakage canceller consists of an autotransformer, a digital tuning capacitor, a voltage controlled tuning resistor, and a compensating amplifier, and it is designed using 0.13 ${\mu}m$ 1-poly 6-metal RF CMOS process. The simulation results show that the proposed structure has over 55 dB rejection characteristic between a transmitter and a receiver and a 2.5 dB of the RX insertion loss. The TX leakage canceller can be digitally tuned from 825 MHz to 985 MHz with the tuning capacitor and it can be fully integrated.

A 1V Analog CMOS Front-End for Cardiac Pacemaker Applications (심장박동 조절장치를 위한 1V 아날로그 CMOS 전단 처리기)

  • Chae, Young-Cheol;Lee, Jeong-Whan;Lee, In-Hee;Han, Gun-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.1
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    • pp.45-51
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    • 2009
  • A low-voltage, low-power analog CMOS front-end for a cardiac pacemaker is proposed. The circuits include a 4th order switched-capacitor (SC) filter with a passband of 80-120 Hz and a SC variable gain amplifier whose control range is from 0 to 24-dB with 0.094 dB step. An inverter-based switched-capacitor circuit technique is used for low-voltage operation and ultra-low power consumption, and correlated double sampling technique is used for reducing the finite gain effect of an inverter. The proposed circuit has been designed in a $0.35-{\mu}m$ CMOS process, and it achieves 80-dB SFDR at 5-kHz sampling frequency. The power consumption is only 330 nW at 1-V power supply.

An ultra-compact Wilkinson power divider MMIC with an improved isolation characteristic employing RCR design method (RCR 삽입법에 의해 설계된 높은 절연특성을 가지는 초소형 MMIC용 윌킨슨 전력분배기)

  • Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.37 no.1
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    • pp.105-113
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    • 2013
  • In this work, using a ${\pi}$-type multiple coupled microstrip line structure (MCMLS) and RCR (Resistor Capacitor Resistor) structure, we fabricated ultra-compact and high isolation Wilkinson power divider on GaAs MMIC (Monolithic Microwave Integrated Circuit). The line length of the Wilkinson power divider was reduced to about ${\lambda}$/46, and its size was 0.304 [$mm^2$], which is 12.1 % of conventional one. Compared with conventional Wilkinson power divider, isolation characteristic of the proposed Wilkinson power divider was highly improved by using RCR insertion method. The proposed Wilkinson power divider showed good RF performances in C/X band.

A Sub-${\mu}$W 22-kHz CMOS Oscillator for Ultra Low Power Radio (극저전력 무선통신을 위한 Sub-${\mu}$W 22-kHz CMOS 발진기)

  • Na, Young-Ho;Kim, Jong-Sik;Kim, Hyun;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.12
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    • pp.68-74
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    • 2010
  • A sub-${\mu}$W CMOS Wien-Bridge oscillator for ultra low power (ULP) radio applications is presented. The Wien-Bridge oscillator is based on an non-inverting opamp amplifier with a closed-loop gain $1+R_2/R_1$ as a means of providing necessary loop gain. An additional RC network provides appropriate phase shift for satisfying the Barkhausen oscillation condition at the given frequency of 1/($2{\pi}RC$). In this design, we propose a novel loop gain control method based on a variable capacitor network instead of a rather conventional variable resistor network. Implemented in $0.18{\mu}m$ CMOS, the oscillator consumes only 560 nA at the oscillation frequency of 22 kHz.

A Study on the Dielectric Property Organic Ultra Thin film (유기초박막의 유전특성에 관한 연구)

  • Kim, Dong-Kwan;Song, Jin-Won;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.87-89
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    • 2001
  • The structure of manufactured device is Cr-Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from -2[V] to +2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

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