• Title/Summary/Keyword: UV-Laser

Search Result 423, Processing Time 0.029 seconds

Raman Spectromter for Detection of Chemicals on a Road (지표면 화학물질 측정을 위한 라만분광장치)

  • Ha, Yeon Chul;Lee, Jae Hwan;Koh, Young Jin;Lee, Seo Kyung;Kim, Yun Ki
    • Korean Journal of Optics and Photonics
    • /
    • v.28 no.3
    • /
    • pp.116-121
    • /
    • 2017
  • In this paper, a Raman spectrometer is designed to detect chemicals contaminating the ground. The system is based on Raman spectroscopy, which is spectral analysis of scattered light from chemicals, induced by a laser. The system consists of a transmitting-optics module with a laser to induce Raman-scattered light from the sample, a receiving-optics module to collect the scattered light, and a spectrograph to separate the collected light into a wavelength spectrum. The telescope, a part of the receiving-optics module, is designed to produce a focal spot in the same position for variable measurement distances using the code V simulator, considering the distance change between the system and the road. The Raman spectra of 12 chemicals on a glass surface and on a concrete sample were measured. Intensity differences between the Raman spectra acquired on a glass surface and on a concrete sample were observed, but the characteristics of the spectra according to the chemicals on them were similar. Additionally, the Raman spectrum of PTFE (polytetrafluoroethylene) was measured at various distances. The measured and simulated optical throughputs were similar. In conclusion, it is confirmed that with this system the Raman spectrum can be measured, irrespective of the distance change.

The Residual Stress Effect on Microstructure and Optical Property of ZnO Films Produced by RF Sputtering (R.F Sputtering으로 제조한 ZnO박막의 미세구조와 광학적 특성에 미치는 잔류응력의 영향)

  • Ryu, Sang;Kim, Young-Man
    • Journal of the Korean institute of surface engineering
    • /
    • v.38 no.4
    • /
    • pp.144-149
    • /
    • 2005
  • ZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from $\~40$ MPa to $\~-1100$MPa depending on processing variables. The specimens were thermally cycled from R.T. to $250^{\circ}C$ to investigate the stress variation as a function of temperature. SEM was employed to characterize the microstructure of te films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property o the films was studied by PL measurements. At the highest substrate temperature $800^{\circ}C$ the film exhibited sharper UV peaks unlike other conditions.

Study on the Solubility of U(VI) Hydrolysis Products by Using a Laser-Induced Breakdown Detection Technique (레이저유도파열검출 기술을 이용한 우라늄(VI) 가수분해물의 용해도 측정)

  • Cho, Hye-Ryun;Park, Kyoung-Kyun;Jung, Euo-Chang;Jee, Kwang-Yong
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
    • /
    • v.5 no.3
    • /
    • pp.189-197
    • /
    • 2007
  • The solubility of U(VI) hydrolysis products was determined by using a laser-induced breakdown detection (LIBD) technique. The experiments were carried out at uranium concentrations in range from $2{\times}10^{-4}\;M\;to\;4{\times}10^{-6}\;M$, pH values between 3.8 and 7.0, the constant ionic strength of 0.1 M $NaClO_4$ and the temperature of $25.0{\pm}0.1^{\circ}C$. The solubility product of U(VI) hydrolysis products was calculated from LIBD results by using the hydrolysis constants selected in NEA-TDB. The solubility product extrapolated to zero ionic strength, ${\log}K^{\circ}_{sp}=-22.85{\pm}0.23$ was calculated by using a specific ion interaction theory (SIT). The spectral features of ionic species in uranium solutions were investigated by using a conventional UV-visible absorption spectrophotometer and a fluorophotometer, respectively, $(UO_2)_2(OH)_2^{2+}\;and\;(UO_2)_3(OH)_5^+$ were dominant species at uranium concentration of $2{\times}10^{-4}\;M$.

  • PDF

Post annealing effect on the photoluminescence properties of ZnO thin films prepared by atomic layer epitaxy (Atomic Layer Epitaxy에 의해 제작된 ZnO 박막의 후열처리에 따른 발광특성 연구)

  • 신경철;임종민;강승모;이종무
    • Journal of the Korean Vacuum Society
    • /
    • v.13 no.3
    • /
    • pp.103-108
    • /
    • 2004
  • High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

Room Temperature Imprint Lithography for Surface Patterning of Al Foils and Plates (알루미늄 박 및 플레이트 표면 미세 패터닝을 위한 상온 임프린팅 기술)

  • Tae Wan Park;Seungmin Kim;Eun Bin Kang;Woon Ik Park
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.30 no.2
    • /
    • pp.65-70
    • /
    • 2023
  • Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.

Kinetic Studies on Homopolymerization of $\alpha$-Methylstyrene and Sequential Block Copolymerization of Isobutylene with $\alpha$-Methylstyrene by Living/Controlled Cationic Polymerization (리빙/조절 양이온중합에 의한 알파메틸스티렌 호모중합 및 이소부틸렌과의 블록공중합에 대한 반응속도론 연구)

  • Wu, Yibo;Guo, Wenli;Li, Shuxin;Gong, Huiqing
    • Polymer(Korea)
    • /
    • v.32 no.4
    • /
    • pp.366-371
    • /
    • 2008
  • The controlled/living cationic polymerization of $\alpha$-methylstyrene (${\alpha}MeSt$) and sequential block copolymerization of isobutylene (IB) with ${\alpha}MeSt$ were achieved using 2-chloro-2,4,4-trimethylpentane (TMPCl)/titanium tetrachloride ($TiCl_4$)/titanium isopropoxide ($Ti(OiPr)_4$)/2,6-ditert-butylpyridine (DtBP) initiating system in $CH_3Cl$/hexane(50/50 v/v) solvent mixture at $-80^{\circ}C$. The polymerization rate decreased with increasing $[Ti(OiPr)_4]/[TiCl_4]$ ratio in the homopolymerization of ${\alpha}MeSt$. The effects of $[Ti(OiPr)_4]/[TiCl_4]$ ratios and $PIB^+$ molecular weight on the polymerization rate and blocking efficiency were also investigated. Well-defined poly(isobutylene-b-$\alpha$-methylstyrene)s were demonstrated by $^1H$-NMR and triple detection SEC; refractive index (RI), multiangle laser light scattering (MALLS) and ultraviolet (UV) detectors. Blocking efficiencies for the poly(isobutylene-b-$\alpha$-methylstyrene)s of almost 100% were obtained when ${\alpha}MeSt$ was induced by PIB's of $M_n\;{\geq}\;41000$ at $[Ti(OiPr)_4]/[TiCl_4]=1$. Differential scanning calorimetry (DSC) of the block copolymers showed two glass transition temperatures, thereby demonstrating microphase separation.

Multi-Core Fiber Based Fiber Bragg Gratings for Ground Based Instruments

  • Min, Seong-Sik;Lindley, Emma;Leon-Saval, Sergio;Lawrence, Jon;Bland-Hawthorn, Joss
    • The Bulletin of The Korean Astronomical Society
    • /
    • v.40 no.1
    • /
    • pp.53.2-53.2
    • /
    • 2015
  • Fiber Bragg gratings (FBGs) are the most compact and reliable method of suppressing atmospheric emission lines in the infrared for ground-based telescopes. It has been proved that real FBGs based filters were able to eliminate 63 bright sky lines with minimal interline losses in 2011 (GNOSIS). Inscribing FBGs on multi-core fibers offers advantages. Compared to arrays of individual SMFs, the multi-core fiber Bragg grating (MCFBG) is greatly reduced in size, resistant to damage, simple to fabricate, and easy to taper into a photonics lantern (PRAXIS). Multi-mode fibers should be used and the number of modes has to be large enough to capture a sufficient amount of light from the telescope. However, the fiber Bragg gratings can only be inscribed in the single-mode fiber. A photonic lantern bi-directionally converts multi-mode to single-mode. The number of cores in MCFBGs corresponds to the mode. For a writing system consisting of a single ultra-violet (UV) laser and phase mask, the standard writing method is insufficient to produce uniform MCFBGs due to the spatial variations of the field at each core within the fiber. Most significant technical challenges are consequences of the side-on illumination of the fiber. Firstly, the fiber cladding acts as a cylindrical lens, narrowing the incident beam as it passes through the air-cladding interface. Consequently, cores receive reduced or zero illumination, while the focusing induces variations in the power at those that are exposed. The second effect is the shadowing of the furthest cores by the cores nearest to the light source. Due to a higher refractive index of cores than the cladding, diffraction occurs at each core-cladding interface as well as cores absorb the light. As a result, any core that is located directly behind another in the beam path is underexposed or exposed to a distorted interference pattern from what phase mask originally generates. Technologies are discussed to overcome the problems and recent experimental results are presented as well as simulation results.

  • PDF

EDTA Surface Capped Water-Dispersible ZnSe and ZnS:Mn Nanocrystals

  • Lee, Jae-Woog;Lee, Sang-Min;Huh, Young-Duk;Hwang, Cheong-Soo
    • Bulletin of the Korean Chemical Society
    • /
    • v.31 no.7
    • /
    • pp.1997-2002
    • /
    • 2010
  • ZnSe and ZnS:Mn nanocrystals were synthesized via the thermal decomposition of their corresponding organometallic precursors in a hot coordinating solvent (TOP/TOPO) mixture. The organic surface capping agents were substituted with EDTA molecules to impart hydrophilic surface properties to the resulting nanocrystals. The optical properties of the water-dispersible nanocrystals were analyzed by UV-visible and room temperature solution photoluminescence (PL) spectroscopy. The powders were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), and confocal laser scanning microscopy (CLSM). The solution PL spectra revealed emission peaks at 390 (ZnSe-EDTA) and 597 (ZnS:Mn-EDTA) nm with PL efficiencies of 4.0 (former) and 2.4% (latter), respectively. Two-photon spectra were obtained by fixing the excitation light source wavelengths at 616 nm (ZnSe-EDTA) and 560 nm (ZnS:Mn-EDTA). The emission peaks appeared at the same positions to that of the PL spectra but with lower peak intensity. In addition, the morphology and sizes of the nanocrystals were estimated from the corresponding HR-TEM images. The measured average particle sizes were 5.4 nm (ZnSe-EDTA) with a standard deviation of 1.2 nm, and 4.7 nm (ZnS:Mn-EDTA) with a standard deviation of 0.8 nm, respectively.

Structural, Electrical and Optical Properties of $HfO_2$ Films for Gate Dielectric Material of TTFTs

  • Lee, Won-Yong;Kim, Ji-Hong;Roh, Ji-Hyoung;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.331-331
    • /
    • 2009
  • Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

  • PDF

Optical Characterization of Sensory Rhodopsin II Thin Films using a Near-field Scanning Microwave Microscope (근접장 마이크로파 현미경을 이용한 로돕신의 광학적 특성 연구)

  • Yu, Kyung-Son;Kim, Song-Hui;Yoon, Young-Woon;Lee, Kie-Jin;Lee, Jung-Ha;Choi, Ah-Reum;Jung, Kwang-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.1
    • /
    • pp.80-85
    • /
    • 2007
  • We report the electro-optical properties of the sensory rhodopsin II using a near-field scanning microwave microscope(NSMM). Rhodopsin was known as a photoreceptor pigment with a retinal as a chromophore via a protonated Schiff base and consists of seven ${\alpha}-helical$ transmembrane segments. The sensory rhodopsin II, expressing E. coli UT5600 with endogenous retinal biosynthesis system and purified with $Ni^{-2}-NTA$ affinity chromatography in the presence of 0.02 % DM (Dodecyl Maltoside) from Natronomonas pharaonis. We measured the absorption spectra and the transients difference of sensory rhodopsin II from Natronomonas pharaonis using a UV/VIS spectrophotometer with Nd-Yag Laser (532 nm). The absorption spectra of NpSR II showed a typical rhodopsin spectrum with a left shoulder region and the photointermediates spectra of NpSR II-ground state (${\lambda}max=498\;nm$), NpSR II-M state (${\lambda}max=390\;nm$), and NpSR II-O state (${\lambda}max=550\;nm$) during the photocycle. The observed photocycle reaction was confirmed by measuring the microwave reflection coefficient $S_{11}$ at an operating frequency of f=3.93-3.95 GHz and compared with the results of a photocycle of NpSR II.