• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 센서학회지
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• 제20권3호
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• 대한전자공학회논문지SD
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• 제43권5호
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• pp.25-33
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• 2006

전달 행렬 방법과 capacitance-voltage 특성, 그리고 측정된 광응답 스펙트럼을 이용하여 Schottky 다이오드 UV-A와 B 광검출기에 사용되는 GaN, $Al_{0.2}Ga_{0.8}N$ 등의 반도체 및 Schottky 접촉 금속 Ni의 물질특성인 흡수계수(absorption coefficient)를 추출하였다. 입사된 빛이 반도체의 공핍영역에서 흡수되는 양을 구하고, 이로부터 각 파장에서의 광응답 특성을 얻는 과정을 컴퓨터 프로그램으로 구현하였다. 그리고, 계산 값을 측정치와 비교하여 각 파장에서 GaN, $Al_{0.2}Ga_{0.8}N$, Ni의 흡수계수를 얻을 수 있었다. 추출된 흡수계수를 이용하여 자외선 광검출기의 광응답을 높이는 설계 방안을 모색하였다. Ni의 흡수계수가 크기 때문에 광응답을 결정하는 주요 요소는 Ni 전극의 두께이다. 따라서 Schottky 접촉 금속 Ni의 두께를 줄이고, 공핍 영역의 크기를 늘릴 수 있다면 광응답 특성이 더욱 향상된 광검출기의 실현이 가능해질 것이다.

• 센서학회지
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• 제17권5호
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• 센서학회지
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• 제32권6호
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.367-368
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• 2007

To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Current Applied Physics
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• 제18권12호
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• 센서학회지
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• 제12권2호
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.