1 |
S. Keller, Yi-Feng Wu, G. Parish, N. Ziang, Jane J. Xu, B. P. Keller, S. P. DenBaars, and U. K. Mishra, 'Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB', IEEE Transactions on Electron Devices, Vol. 48 pp. 552-559, Mar. 2001
DOI
ScienceOn
|
2 |
J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, 'Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors', Appl. Phys. Lett. Vol. 77, pp. 250-252, Jul. 2000
DOI
ScienceOn
|
3 |
E. D. Palik, Handbook of Optical Constants of Solids Vol. 2, (Academic Press, New York, pp. 322-323, 1985)
|
4 |
Aleksandra B. Djurisic and E. Herbert Li, 'Dielectric function models for describing the optical properties of hexagonal GaN', J. Appl. Phys. Vol. 89, pp. 273-282, Jan. 2001
DOI
ScienceOn
|
5 |
M. Razeghi and A. Rogalski 'Semiconductor ultraviolet detectors', J. Appl. Phys. Vol. 79, pp. 7433-7473, May 1996
DOI
ScienceOn
|
6 |
J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra, and S. P. DenBaars, 'Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements' , Appl. Phys. Lett. Vol. 71, pp. 2572-2574, Nov. 1997
DOI
ScienceOn
|
7 |
김태용, 김상배, 'Design of 850 nm Vertical-Cavity Surface-Emitting Lasers by Using a Transfer Matrix Method', 전자공학회 논문지, 제 41권, SD편, 제7호, 545-550쪽, 2004년 7월
과학기술학회마을
|
8 |
L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, and J. Redwing, 'The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes', J. Appl. Phys. Vol. 84, pp. 2099-2104, Aug. 1998
DOI
ScienceOn
|
9 |
E. Monroy, F. Calle, E. Munoz, F. Omnes, 'Effects of bias on the responsivity of GaN Metal-Semiconductor-Metal photodetectors', Phys. Stat. Sol. Vol. 176, pp. 157-161, 1999
DOI
|
10 |
D. A. Neamen, Semiconductor physics & devices, (McGraw-Hill, U. S., pp. 316, 1992)
|
11 |
Junji Kotani, Hideki Hasegawa and Tamotsu Hashizume, 'Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model', Appl. Surface Science, Vol. 237 pp. 213-218, Oct. 2004
DOI
ScienceOn
|