• 제목/요약/키워드: UV etching

검색결과 143건 처리시간 0.027초

감광성유리를 이용한 마이크로머시닝 기술 (Micromachining technology using photosensitive glass)

  • 조수제
    • 한국레이저가공학회지
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    • 제14권1호
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    • pp.25-29
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    • 2011
  • Micromachining of photosensitive glass by UV exposure, heat treatment, and etching processes is reported. Like photoresist, the photosensitive glass is also classified into positive and negative types by development characteristics. For the positive type, the exposed area is crystallized and etched away during the etching process in HF solution, whereas the unexposed area is crystallized and etched away for the negative type. The crystallized area of the photosensitive glass has an etch rate approximately 30~100 times faster than that of the amorphous area so that it becomes possible to fabricate microstructures in the glass. Based on the unique properties of glass such as high optical transparency, electrical insulation, and chemical/thermal stability, the glass micromachining technique introduced in this work could be widely applied to various devices in the fields of electronics, bio engineering, nanoelectonics and so on.

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ICP 장치를 이용한 초전도 자속 흐름 트랜지스터의 링크 제작 (Fabrication of the Superconducting Flux Flow Transistor Using the ICP Etching Method)

  • 강형곤;임연호;임성훈;최효상;한윤봉;한병성
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권10호
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    • pp.494-499
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    • 2001
  • The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were investigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-ES, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=O, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

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불화 함유 다이아몬드 상 탄소 스탬프를 사용하는 UV 나노 임프린트 리소그래피 (UV-Nanoimprint Lithography Using Fluorine Doped Diamond-Like Carbon Stamp)

  • 정준호;알툰알리;나종주;최대근;김기돈;최준혁;이응숙
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2006년도 춘계학술대회 논문집
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    • pp.109-112
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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UV 나노임프린트 리소그래피를 위한 불화 함유 다이아몬드 상 탄소 스탬프의 제작 (Fabrication of Fluorine Doped Diamond-Like Carbon Stamp for UV-Nanoimprint Lithography)

  • 알툰 알리;정준호;나종주;최대근;김기돈;이응숙
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.145-146
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    • 2006
  • A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

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자외선 레이저를 이용한 건식디캡슐레이션에 관한 연구 (A Study on dry decapsulation by Using a UV Laser)

  • 홍윤석;김종배;서명희;최지훈;윤면근;남기중
    • 한국레이저가공학회지
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    • 제11권1호
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    • pp.7-11
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    • 2008
  • Decapsulation technology is useful to inspect EMC of package device and the etching technology enable to check inside of device by removing plastic molding. Chemical etching method is used widely to fabricate a lot of semiconductor. But the method has some disadvantage due to wet process. Proposed method in this paper shows the application possibility such as fast processing time, processing accuracy and dry process. These result was obtained by directly removing of packed EMC using UV laser.

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Sol-gel Self-patterning 기술을 이용한 광감응성 Sr0.9Bi2.1Ta2O9 박막의 제조기술에 관한 연구 (A Study on Fabrication of Photosensitive Sr0.9Bi2.1Ta2O9 Thin Film by Sol-gel Self-patterning Technique)

  • 양기호;박태호;임태영;오근호;김병호
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.750-757
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    • 2002
  • Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$$Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

GaN-based Ultraviolet Passive Pixel Sensor for UV Imager

  • Lee, Chang-Ju;Hahm, Sung-Ho;Park, Hongsik
    • 센서학회지
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    • 제28권3호
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    • pp.152-156
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    • 2019
  • An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

금속 패터닝과 Blank노광을 이용한 감광성 유리의 미세가공 (Microfabrication of Photosensitive Glass Using Metal Patterning and Blank Exposure)

  • 조재승;강형범;윤혜진;김효진;임현우;조시형;임실묵
    • 한국표면공학회지
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    • 제46권3호
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    • pp.99-104
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    • 2013
  • The simple and cost-effective microfabrication method of photosensitive glass (PSG) using metal patterning and blank exposure was proposed. Conventional photolithography for micromachining of PSG needs a costly quartz mask which has high transmittance as an optical property. However, in this study the process was improved through the combination of micro-patterned Ti thin film and blank UV exposure without quartz mask. The effect of UV exposure time as well as the DHF etching condition was investigated. UV exposure test was performed within the range from 3 min to 9 min. The color and etch result of PSG exposed for 5 min were the most clear and effective to etch more precisely, respectively. The etching results of PSG in diluted hydrofluoric acid (DHF) with a concentration of 5, 10, 15 vol% were compared. The effect on the side etch was insignificant while the etch rate was proportional as the concentration increased. 10 vol% DHF results not only high etch rate of 75 ${\mu}m/min$ also lower side etch value after PSG etching. This method facilitates the microfabrication of PSG with various patterns and high aspect ratio for applying to advanced applications.

UV-감응형 에폭시 마스크를 사용한 균일한 분포의 터널형 알루미늄 에치 피트 형성 연구 (Formation of Aluminum Etch Tunnel Pits with Uniform Distribution Using UV-curable Epoxy Mask)

  • 박창현;유현석;이준수;김경민;김영민;최진섭;탁용석
    • 공업화학
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    • 제24권5호
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    • pp.562-565
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    • 2013
  • 고순도의 알루미늄 호일은 전기화학적 에칭을 통해 표면적을 증가시킨 후 전해 커패시터의 양극으로 사용된다. 그러나 산화 피막의 결함 및 에치 피트의 불규칙 생성에 의해 성장된 에치 피트의 분포는 불균일하며 이러한 불균일 형태는 알루미늄 넓은 표면적 분포에도 불구하고 여러 형태의 적용을 어렵게 만든다. 본 연구에서는 알루미늄의 선택적 에칭을 위해 포토리소그래피 방법으로 제작된 패턴 마스크를 사용하여 알루미늄 표면에 균일성을 갖는 보호층을 형성시켰다. 균일한 패턴을 갖는 알루미늄을 용액의 온도 및 전류밀도 등의 조건을 변경하여 실험하였고, 알루미늄 표면에 다양한 크기($2{\sim}5{\mu}m$)의 균일성을 갖는 에치 피트의 형성을 확인할 수 있었다.

UV 나노임프린트 리소그래피용 UV 투과성 나노스탬프 제작 (UV transparent stamp fabrication for UV nanoimprint lithography)

  • 정준호;심영석;손현기;신영재;이응숙;허익범;권성원
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1069-1072
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

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