• Title/Summary/Keyword: Two-Dimensional Channel

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A three-dimensional two-hemisphere model for unmanned aerial vehicle multiple-input multiple-output channels

  • Zixu Su;Wei Chen;Changzhen Li;Junyi Yu;Guojiao Gong;Zixin Wang
    • ETRI Journal
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    • v.45 no.5
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    • pp.768-780
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    • 2023
  • The application of unmanned aerial vehicles (UAVs) has recently attracted considerable interest in various areas. A three-dimensional multiple-input multiple-output concentric two-hemisphere model is proposed to characterize the scattering environment around a vehicle in an urban UAV-to-vehicle communication scenario. Multipath components of the model consisted of lineof-sight and single-bounced components. This study focused on the key parameters that determine the scatterer distribution. A time-variant process was used to analyze the nonstationarity of the proposed model. Vital statistical properties, such as the space-time-frequency correlation function, Doppler power spectral density, level-crossing rate, average fade duration, and channel capacity, were derived and analyzed. The results indicated that with an increase in the maximum scatter radius, the time correlation and level-crossing rate decreased, the frequency correlation function had a faster downward trend, and average fade duration increased. In addition, with the increase of concentration parameter, the time correlation, space correlation, and level-crossing rate increased, average fade duration decreased, and Doppler power spectral density became flatter. The proposed model was compared with current geometry-based stochastic models (GBSMs) and showed good consistency. In addition, we verified the nonstationarity in the temporal and spatial domains of the proposed model. These conclusions can be used as references in the design of more reasonable communication systems.

Analysis on DIBL of DGMOSFET for Device Parameters

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.738-742
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    • 2011
  • This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

Analysis of Hydraulic Characteristics Depending Upon the Geometrical and Discharge Condition at Channel Junctions (하도 합류부의 기하학적 특성과 유량조건에 따른 수리학적 특성 해석)

  • Ahn, Seung-Seop;Choi, Soo-Chul;Yim, Dong-Hee
    • Journal of Environmental Science International
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    • v.16 no.4
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    • pp.495-503
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    • 2007
  • In this study, we took the geometrical character of the river channel junction and hydrologic conditions as independent variables, and hydraulic behavior characteristics as an independent variable. The result, after multiple analysis was carried out, proved that, except for the generating area of the accelerating zone of velocity the accelerating zone and both the main channel and the tributary zone of stagnation the stagnation zone, there was correlation of over 90%. Also, derived presumed expression of the hydraulic characteristics of the junction was applied to the real natural channel - the river channel of the Guem-ho main channel(the A-yang bridge to the Guem-ho bridge). As the result, it proved that it represented hydraulic characteristics relatively well.

Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

  • Mao, Ling-Feng
    • ETRI Journal
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    • v.39 no.2
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    • pp.284-291
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    • 2017
  • Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

A Study on Hydraulic Characteristics of the Curved Channel in the Downstream of Dam (댐 하류 만곡부 하천에 대한 수리학적 특성 연구)

  • Choi, Han-Kyu;Beak, Hyo-Seon;Lee, Kye-Yu
    • Journal of Industrial Technology
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    • v.25 no.A
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    • pp.3-14
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    • 2005
  • In order to accurately analyze the detailed hydraulic characteristics of the curved channel in the downstream of dam with the hydraulic structures such as bridge piers, RMA2 model which is one of two-dimensional models is applied to ChunCheon dam downstream curved channel. A series of hydraulic model tests are carried out for comparison studies. HEC-RAS model is also applied to the same site. There are no errors when velocities and water levels resulted from HEC-RAS model RMA2 model are compared with those of hydraulic model test on the straight channel. But, it is found that results of RMA2 model have a better agreement with those of hydraulic model test than those of HEC-RAS model on the curved channel with bridge piers. Additionally, RMA2 model can be predicted the eddy phenomena around bridge piers of the curved channel.

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Heat Transfer Characteristics of Electronic Components in a Horizontal Channel According to Various Cooling Methods (다양한 냉각방법에 따른 수평채널 내 전자부품의 열전달 특성)

  • Son, Young-Seok;Shin, Jee-Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.6
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    • pp.854-861
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    • 2008
  • Heat transfer characteristics of protruding electronic components in a horizontal channel are studied numerically. The system consists of two horizontal channels formed by two covers and one printed circuit board which has three uniform protruding heat source blocks. A two-dimensional numerical model has been developed to predict the conjugate heat transfer. and the finite volume method is used to solve the problem. Five different cooling methods are considered to examine the heat transfer characteristics of electronic components according to the different cooling methods. The velocity and temperature of cooling medium and the temperature of the heat source blocks are obtained. The results of the five different cooling methods are compared to find out the most efficient cooling method in a given geometry and heat sources.

Cooling Characteristics of a Parallel Channel with Protruding Heat Sources Using Convection and Conduction Heat Transfer (돌출된 열원이 있는 채널에서 대류와 전도열전달을 이용한 냉각특성)

  • 손영석;신지영
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.14 no.11
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    • pp.923-930
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    • 2002
  • Cooling characteristics of a parallel channel with protruding heat sources using convection and conduction heat transfer are studied numerically. A two-dimensional model has been developed for numerical prediction of transient, compressible, viscous, laminar flow, and conjugate heat transfer between parallel plates with uniform block heat sources. The finite volume method is used to solve the problem. The assembly consists of two channels formed by two covers and one printed circuit board which has three uniform heat source blocks. Six different cooling methods are considered to find out the most efficient cooling method in a given geometry and heat sources. The velocity and temperature fields of cooling medium, the temperature distribution along the block surface, and the maximum temperature in each block are obtained. The results are compared to examine the cooling characteristics of the different cooling methods.

Computation of Dynamic Fluid-Structure Interaction in a 2-Dimensional Laminar Channel Flow Divided by a Plate (판으로 나뉘어진 2차원 충류 채널유동에서 동적 유체-구조물 상호작용 수치해석)

  • Namkoong, Kak;Choi, Hyoung-Gwon;Yoo, Jung-Yul
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.12
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    • pp.1738-1746
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    • 2002
  • In the FSI (Fluid-Structure Interaction) problems, two different governing equations are to be solved together. One is fur the fluid and the other for the structure. Furthermore, a kinematic constraint should be imposed along the boundary between the fluid and the structure. We use the combined formulation, which incorporates both the fluid and structure equations of motion into a single coupled variational equation so that it is not necessary to calculate the fluid force on the surface of structure explicitly when solving the equations of motion of the structure. A two-dimensional channel flow divided by a Bernoulli-Euler beam is considered and the dynamic response of the beam under the influence of channel flow is studied. The Navier-Stokes equations are solved using a P2P1 Galerkin finite element method with ALE (Arbitrary Lagrangian-Eulerian) algorithm. The internal structural damping effect is not considered in this study and numerical results are compared with a previous work fer steady case. In addition to the Reynolds number, two non-dimensional parameters, which govern this fluid-structure system, are proposed. It is found that the larger the dynamic viscosity and density of the fluid are, the larger the damping of the beam is. Also, the added mass is found to be linearly proportional to the density of the fluid.

Improvement in Efficiency and Operating Range of Centrifugal Blower Stage for Sewage Aeration Blower

  • Hiradate, Kiyotaka;Kanno, Toshio;Nishida, Hideo;Shinkawa, Yasushi;Joukou, Satoshi
    • International Journal of Fluid Machinery and Systems
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    • v.3 no.4
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    • pp.379-385
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    • 2010
  • We developed a high-efficiency, wide-operating-range centrifugal blower stage to meet the demand for reduced total energy-consumption in sewage treatment plants. We improved the efficiency of the two-dimensional impeller using a shape optimization tool and one-dimensional performance prediction tool. A limit of the throat deceleration ratio was set to maintain the stall-margin of the impeller. The low solidity vaned diffuser and return channel were designed using a sensitivity analysis with orthogonal arrays and three-dimensional steady flow simulations. The low solidity diffuser was designed in order to improve the performance in the low-flow-rate region. The return channel was designed so that the total pressure loss in the return channel was minimized. Model tests of both the conventional and optimized blower stages were carried out, and the efficiency and operating range of both stages were compared. The optimized blower stage improved in stage efficiency by 3% and in operating range by 5% compared with the conventional blower stage.

Analysis of Channel Doping Concentration Dependent Subthreshold Characteristics for Double Gate MOSFET (이중게이트 MOSFET에서 채널도핑농도에 따른 문턱전압이하 특성 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.10
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    • pp.1840-1844
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    • 2008
  • In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.