• Proceedings of the Korean Operations and Management Science Society Conference
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• 2001.10a
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• pp.233-236
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• 2001

This study explores on the static and dynamic growth patterns of high-tech ventures in Korea. We developed an integrative framework with target market (local vs. global), product/market maturity (existing vs. emerging), and technological capability (follower vs. pioneer). We also identified seven new ventures strategies as follows: i) reactive imitation, ii) proactive localization, iii) import substitution, iv) creative imitation, v) early market-entry, vi) global niche, and vii) global innovation. With five successful Korean new ventures, we found different competitive behaviors and performance among new venture strategic types. This study also observed two different growth patterns: growth through strategic replication and growth through strategic change. It depends on whether they are pursuing similar strategy over time or different strategy within for growth. In addition, we found that creative imitation plays a stepping-stone role in two-step internationalization processes. Although this study is exploratory and needs more empirical studies, it can provide new ventures with meaningful guidelines for growth and internationalization with a dynamic perspective.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• Journal of Surface Science and Engineering
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• v.43 no.2
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• pp.47-50
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• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.357-363
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• 1994

The irradiation growth of the Zircaloy-4 cladding in the KOFA fuel loaded in the Kori-2 nuclear plant was measured to evaluate the irradiation growth behavior and to be compared with that of the Siemens cladding having different manufacturing process. Due to the partial recrystallization by final heat treatment, the KOFA Zircaloy-4 cladding showed a two step irradiation growth behavior such as the growth saturation and the accerlation which is typical of the fully annealed Zircaloy cladding. The difference in the measured irradiation growth rate between the KOFA and the Siemens cladding could be explained by the difference in the cladding texture which depends on the manufacturing process. From the measured irradiation growth data of Kori-2 KOFA fuel, a two-step irradiation growth model of the KOFA Zircaloy-4 cladding was derived, the accuracy of which can be more clearly verified as the measured data of the irradiation growth are accumulated in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.275-275
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• 2009

CdTe(331)/Si(211) and CdTe(400)/Si(100) thin films have been grown by MOCVD(metal organic chemical vapor deposition) system for large scale of IFPAs(IR focal plane arrays). We have investigated the effect of various growth parameters on the surface morphology and structural quality. Single crystalline CdTe(331) films were grown by two stage growth method - low temperature buffer layer step and high temperature growth step. In other case, single crystal of CdTe(400) films were grown on a few atomic layer thickness of GaAs which is grown on Si(100) substrate by molecular beam epitaxy. The crystalline quality of the films was analyzed by X-ray diffraction. The surface morphology and crystal structure of CdTe films were characterized by optical microscope.

• Journal of Powder Materials
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• v.6 no.3
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• pp.246-250
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• 1999

The effects of the ${\beta}-Si_3N_4$ starting particle size and $\alpha$/$\beta$ phase transformation during sintering process on the microstructure evolution of Yttrium $\alpha$-Sialon ceramics were investigated. As-received ${\beta}-Si_3N_4$ powder (mean particle size: 0.54$\mu$m) and classified ${\beta}-Si_3N_4$ powder(mean particle size: $0.26\mu{m}$) were used as starting powders. With decreasing the starting particle size, the growth of elongated grains was enhanced, which resulted in the whisker -like microstructure with elongated grains. These results were discussed in relation to the two-dimensional nucleation and growth theory. In the specimen heat treated at $1600^{\circ}C$ for 10h before sintering at $1950^{\circ}C$for 1h under 40atm(2-step sintering), the grain size was smaller than of the 1-step sintering at 195$0^{\circ}C$ for 1h. However, bimodal microstructure evolution were not not remarkable in both sample, which is ascribed to the $\alpha$-phase contents existing in ${\beta}-Si_3N_4$ starting powder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• Korean Journal of Health Education and Promotion
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• v.14 no.1
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• pp.161-172
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• 1997

In order to assess the physical growth and development, and nutritional status of primary, middle and high school students in the city of Seoul, physiques of 4, 041 persons(Male : 2, 096, Female: 1, 945) were measured from March 1 to July 31 in 1995 and variouis physical and nutritional indices, maximum growth age related to them were calculated. The results are as follows: 1. Physical Growth and Development The growth of body height showed straight linear development among male in the ages 7~16 and among female 7~14, and after that showed slower development. The age of cross over between two sexes was between 11.5 to 12.5 years of age. The maximum growth age was between 11 and 12 years of age(7.28cm) in male and between 11 aqnd 12 years of age(9.77cm) in female. In terms of body weight, it also showed straight linear development among male in the ages 7~16 and among female 7~14, and after that showed slower development. The maximum growth age was between 11 and 12 years of age(7.64kg) in male and between 11 and 12 years of age(8.l9kg) in female. In terms of chest girth, it showed two step development among male in the age of 7~13 and 13~17, and among female in the age of 7~14 and 14~17. The age of cross over between two sexes was 11 and 12 years of age. In terms of sitting height, it showed two step development in the age of 7~14 and 14~17 of both sexes and the age of cross over between two sexes was between 10.5 to 14.5 years of age. The maximum growth age was between 11 and 12 years of age(3.64cm) in male and between 11 and 12 years of age(5.98cm) in female. 2. Maximum Growth Age of Physical Growth and Development In body height, MGA was 10.59 for male and 10.34 for female which showed that MGA for both sexes appeared in similar periods. In body weight, MGA was 10.30 for male and 10.30 for female which showed that MGA for both sexes appeared in similar periods. In chest-girth, MGA was 14.74 for male and 11.60 for female which showed that MGA for female appeared about 3 years earlier than for male. In sitting height, MGA was 11.69 for male and 11.38 for female which showed that MGA for both sexes appeared in similar periods. Maximum growth ages of physiques appeared in order of body height 〉 body weight 〉 sitting height 〉 chest-girth.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.221.2-221.2
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• 2015

Graphene is very interesting 2 dimensional material providing unique properties. Especially, graphene has been investigated as a stretchable and transparent conductor due to its high mobility, high optical transmittance, and outstanding mechanical properties. On the contrary, high sheet resistance of extremely thin monolayer graphene limits its application. Artificially stacked multilayer graphene is used to decrease its sheet resistance and has shown improved results. However, stacked multilayer graphene requires repetitive and unnecessary transfer processes. Recently, growth of multilayer graphene has been investigated using a chemical vapor deposition (CVD) method but the layer controlled synthesis of multilayer graphene has shown challenges. In this paper, we demonstrate controlled growth of multilayer graphene using a two-step process with multi heating zone low pressure CVD. The produced graphene samples are characterized by optical microscope (OM) and scanning electron microscopy (SEM). Raman spectroscopy is used to distinguish a number of layers in the multilayer graphene. Its optical and electrical properties are also analyzed by UV-Vis spectrophotometer and probe station, respectively. Atomic resolution images of graphene layers are observed by high resolution transmission electron microscopy (HRTEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.