• Journal of Electrical Engineering and Technology
• /
• v.6 no.2
• /
• pp.280-283
• /
• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.1
• /
• pp.16-22
• /
• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.2
• /
• pp.233-238
• /
• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.201-201
• /
• 2010

볼로미터 제작 공정 중 One step via 공정 시 via hole 모양에 의해 정기적 연결 및 구조적 안정성에 문제를 해결하기 위하여 다른 via 식각 방식으로 공정을 진행하였으며 그에 따른 via 공정 차이에 대한 결과를 연구하였다.

• Journal of the Korean Institute of Navigation
• /
• v.24 no.4
• /
• pp.299-312
• /
• 2000

Because shore(ship) to ship(shore) communication service via INMARSAT pay expensive cost, satellite service typically use two stage service that land users dial up LES(Land Earth Station) for sending or receiving message. In order to send and receive message, land users must maintain online state with LES on dedicated line. Also, two stage INMARSAT communication service must consume long time that processes step by step. In case of large company, they have own communication system, but small companys communicate simple messages with only telex. This paper describes the design and implementation of an integrated communication services via INMARSAT-C. This system uses inexpensive INMARSAT-C for transmission between ship and land. Because this system provides web and E-Mail interface, users send and receive messages easily and quickly. This system provides most users with inexpensive and easy communication facilities between ship and land.

• Korean Chemical Engineering Research
• /
• v.52 no.3
• /
• pp.340-346
• /
• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Journal of Electrochemical Science and Technology
• /
• v.8 no.2
• /
• pp.146-154
• /
• 2017

In this study, copper (II) oxide was prepared for use in a copper electroplating solution. Copper chloride powder and copper (II) oxide are widely used as raw materials for electroplating. Copper (II) oxide was synthesized in this study using a two-step chemical reaction. Herein, we developed a method for the preparation of copper (II) oxide without the use of sintering. In the first step, copper carbonate was prepared without sintering, and then copper (II) oxide was synthesized without sintering using sodium hydroxide. The optimum amount of sodium hydroxide used for this process was 120 g and the optimum reaction temperature was $120^{\circ}C$ regardless of the starting material.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.3C no.2
• /
• pp.43-47
• /
• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.12
• /
• pp.2491-2495
• /
• 2008

• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.868-873
• /
• 2011

In this study, the fabrication of ultra fine grained Mo bulk was conducted. $MoO_3$ nanopowders were prepared by a high energy ball-milling process and then reduced at the temperature of $800^{\circ}C$ without holding time in $H_2$ atmosphere. The particle size of Mo nanopowder was ~150 nm and grain size was ~40 nm. The two-step process was employed for the sintering of Mo nanopowder to obtain fine grain size. The densification over 90% could be obtained by the two-step sintering with a grain size of less than 660 nm. For higher density, modified two-step sintering was designed. 95% of theoretical density with the grain size of 730 nm was obtained by the modified two-step sintering.